Patents by Inventor Toshiki Nakajima
Toshiki Nakajima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240049379Abstract: A plasma processing apparatus includes an antenna configured to generate plasma of a processing gas in a chamber. The antenna includes: an inner coil provided around the gas supply unit to surround a gas supply unit; and an outer coil provided around the gas supply unit and the inner coil to surround them. The outer coil is configured such that both ends of a wire forming the outer coil are opened; power is supplied from a power supply unit to a central point of the wire; the vicinity of the central point of the wire is grounded; and the outer coil resonates at a wavelength that is a half of a wavelength of the high frequency power. The inner coil is configured such that both ends of a wire forming the inner coil are connected through a capacitor and the inner coil is inductively coupled with the inner coil.Type: ApplicationFiled: October 20, 2023Publication date: February 8, 2024Applicant: Tokyo Electron LimitedInventors: Yohei YAMAZAWA, Takehisa SAITO, Mayo UDA, Keigo TOYODA, Alok RANJAN, Toshiki NAKAJIMA
-
Patent number: 11832373Abstract: A plasma processing apparatus includes an antenna configured to generate plasma of a processing gas in a chamber. The antenna includes: an inner coil provided around the gas supply unit to surround a gas supply unit; and an outer coil provided around the gas supply unit and the inner coil to surround them. The outer coil is configured such that both ends of a wire forming the outer coil are opened; power is supplied from a power supply unit to a central point of the wire; the vicinity of the central point of the wire is grounded; and the outer coil resonates at a wavelength that is a half of a wavelength of the high frequency power. The inner coil is configured such that both ends of a wire forming the inner coil are connected through a capacitor and the inner coil is inductively coupled with the inner coil.Type: GrantFiled: September 21, 2022Date of Patent: November 28, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Yohei Yamazawa, Takehisa Saito, Mayo Uda, Keigo Toyoda, Alok Ranjan, Toshiki Nakajima
-
Patent number: 11804366Abstract: A plasma processing apparatus includes a baffle structure between a mounting table and a processing chamber. The baffle structure has a first member and a second member. The first member has a first cylindrical part extending between the mounting table and the processing chamber, and a plurality of through-holes elongated in the vertical direction is formed in an array in the circumferential direction in the first cylindrical part. The second member has a second cylindrical part having an inner diameter greater than the outer diameter of the cylindrical part for the first member. The second member moves up and down in a region that includes the space between the first member and the processing chamber.Type: GrantFiled: August 13, 2021Date of Patent: October 31, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Yuki Hosaka, Yoshihiro Umezawa, Toshiki Nakajima
-
Publication number: 20230021588Abstract: A plasma processing apparatus includes an antenna configured to generate plasma of a processing gas in a chamber. The antenna includes: an inner coil provided around the gas supply unit to surround a gas supply unit; and an outer coil provided around the gas supply unit and the inner coil to surround them. The outer coil is configured such that both ends of a wire forming the outer coil are opened; power is supplied from a power supply unit to a central point of the wire; the vicinity of the central point of the wire is grounded; and the outer coil resonates at a wavelength that is a half of a wavelength of the high frequency power. The inner coil is configured such that both ends of a wire forming the inner coil are connected through a capacitor and the inner coil is inductively coupled with the inner coil.Type: ApplicationFiled: September 21, 2022Publication date: January 26, 2023Applicant: Tokyo Electron LimitedInventors: Yohei YAMAZAWA, Takehisa Saito, Mayo Uda, Keigo Toyoda, Alok Ranjan, Toshiki Nakajima
-
Patent number: 11470712Abstract: A plasma processing apparatus includes an antenna configured to generate plasma of a processing gas in a chamber. The antenna includes: an inner coil provided around the gas supply unit to surround a gas supply unit; and an outer coil provided around the gas supply unit and the inner coil to surround them. The outer coil is configured such that both ends of a wire forming the outer coil are opened; power is supplied from a power supply unit to a central point of the wire; the vicinity of the central point of the wire is grounded; and the outer coil resonates at a wavelength that is a half of a wavelength of the high frequency power. The inner coil is configured such that both ends of a wire forming the inner coil are connected through a capacitor and the inner coil is inductively coupled with the inner coil.Type: GrantFiled: September 27, 2018Date of Patent: October 11, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Yohei Yamazawa, Takehisa Saito, Mayo Uda, Keigo Toyoda, Alok Ranjan, Toshiki Nakajima
-
Publication number: 20220270851Abstract: There is provided an antenna for inductively coupled plasma excitation. The antenna comprises a plurality of coil assemblies and a conductive plate connected to the plurality of coil assemblies, the conductive plate having a central opening and at least one plate terminal.Type: ApplicationFiled: February 18, 2022Publication date: August 25, 2022Applicant: Tokyo Electron LimitedInventors: Takehisa SAITO, Yohei TAMAZAWA, Toshiki NAKAJIMA, Daisuke KURASHINA, Naoki FUJIWARA
-
Patent number: 11348768Abstract: A plasma processing apparatus includes a processing container; a placement table provided in the processing container and including a placement region on which a workpiece is placed for a plasma processing; a baffle structure that defines a first space and a second space, and including a first member and at least one second member; a gas supply portion connected to the first space; a first pressure gauge connected to the first space; an exhaust apparatus connected to the second space; a second pressure gauge connected to the second space; a driving mechanism that moves the at least one second member in a vertical direction; a displacement gauge configured to measure a position or a distance of the second member; and a controller that controls the driving mechanism. The controller controls the driving mechanism such that a pressure of the first space becomes a predetermined pressure designated by a recipe.Type: GrantFiled: May 7, 2020Date of Patent: May 31, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Yuki Hosaka, Yoshihiro Umezawa, Toshiki Nakajima, Mayo Uda
-
Publication number: 20210375597Abstract: A plasma processing apparatus includes a baffle structure between a mounting table and a processing chamber. The baffle structure has a first member and a second member. The first member has a first cylindrical part extending between the mounting cable and the processing chamber, and a plurality of through-holes elongated in the vertical direction is formed in an array in the circumferential direction in the first cylindrical part. The second member has a second cylindrical part having an inner diameter greater than the outer diameter of the cylindrical part for the first member. The second member moves up and down in a region that includes the space between the first member and the processing chamber.Type: ApplicationFiled: August 13, 2021Publication date: December 2, 2021Applicant: TOKYO ELECTRON LIMITEDInventors: Yuki HOSAKA, Yoshihiro UMEZAWA, Toshiki NAKAJIMA
-
Publication number: 20210320009Abstract: A plasma processing apparatus includes a baffle plate, a shutter, and a driving device. The baffle plate has a cylindrical shape, and has a plurality of through holes formed in a sidewall thereof. The shutter has a cylindrical shape and is provided around the baffle plate to be movable in an axial direction of the baffle plate along the sidewall of the baffle plate. The driving device moves the shutter along the sidewall of the baffle plate. The plurality of through holes are disposed in the sidewall of the baffle plate so that synthesized conductance of the through holes, which are not covered by the shutter, is increased with respect to a movement amount of the shutter as the shutter is moved downward.Type: ApplicationFiled: June 24, 2021Publication date: October 14, 2021Applicant: TOKYO ELECTRON LIMITEDInventors: Yuki HOSAKA, Yoshihiro UMEZAWA, Toshiki NAKAJIMA, Mayo UDA
-
Patent number: 11101114Abstract: A plasma processing apparatus includes a baffle structure between a mounting table and a processing chamber. The baffle structure has a first member and a second member. The first member has a first cylindrical part extending between the mounting table and the processing chamber, and a plurality of through-holes elongated in the vertical direction is formed in an array in the circumferential direction in the first cylindrical part. The second member has a second cylindrical part having an inner diameter greater than the outer diameter of the cylindrical part for the first member. The second member moves up and down in a region that includes the space between the first member and the processing chamber.Type: GrantFiled: June 5, 2015Date of Patent: August 24, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Yuki Hosaka, Yoshihiro Umezawa, Toshiki Nakajima
-
Patent number: 10950467Abstract: The mechanism includes a pipe and a valve provided in the pipe. The pipe is configured to connect a gas source and a semiconductor manufacturing apparatus. The valve is configured to control a flow rate of the gas. The valve includes a housing and a columnar shaft. The housing includes an inlet and an outlet. A gas flows from the gas source into the internal space through the inlet. A gas flows from the internal space to the semiconductor manufacturing apparatus through the outlet. A gap is provided between an outer peripheral surface of the shaft and an inner wall surface of the housing. The shaft is accommodated in the internal space of the housing and is rotatable. A through hole which penetrates the shaft is formed on the outer peripheral surface of the shaft. Both ends of the through hole correspond to the inlet and the outlet.Type: GrantFiled: April 11, 2017Date of Patent: March 16, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Yuki Hosaka, Yoshihiro Umezawa, Toshiki Nakajima, Mayo Uda, Kenichi Shimono
-
Publication number: 20200266034Abstract: A plasma processing apparatus includes a processing container; a placement table provided in the processing container and including a placement region on which a workpiece is placed for a plasma processing; a baffle structure that defines a first space and a second space, and including a first member and at least one second member; a gas supply portion connected to the first space; a first pressure gauge connected to the first space; an exhaust apparatus connected to the second space; a second pressure gauge connected to the second space; a driving mechanism that moves the at least one second member in a vertical direction; a displacement gauge configured to measure a position or a distance of the second member; and a controller that controls the driving mechanism. The controller controls the driving mechanism such that a pressure of the first space becomes a predetermined pressure designated by a recipe.Type: ApplicationFiled: May 7, 2020Publication date: August 20, 2020Applicant: TOKYO ELECTRON LIMITEDInventors: Yuki HOSAKA, Yoshihiro UMEZAWA, Toshiki NAKAJIMA, Mayo UDA
-
Patent number: 10636683Abstract: The mechanism includes a pipe and a valve provided in the pipe. The pipe is configured to connect a gas source and a semiconductor manufacturing apparatus. The valve is configured to control a flow rate of the gas. The valve includes a housing and a columnar shaft. The housing includes an inlet and an outlet. A gas flows from the gas source into the internal space through the inlet. A gas flows from the internal space to the semiconductor manufacturing apparatus through the outlet. A gap is provided between an outer peripheral surface of the shaft and an inner wall surface of the housing. The shaft is accommodated in the internal space of the housing and is rotatable. A through hole which penetrates the shaft is formed on the outer peripheral surface of the shaft. Both ends of the through hole correspond to the inlet and the outlet.Type: GrantFiled: April 11, 2017Date of Patent: April 28, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Yuki Hosaka, Yoshihiro Umezawa, Toshiki Nakajima, Mayo Uda, Kenichi Shimono
-
Publication number: 20190131136Abstract: A plasma processing apparatus includes a baffle plate, a shutter, and a driving device. The baffle plate has a cylindrical shape, and has a plurality of through holes formed in a sidewall thereof. The shutter has a cylindrical shape and is provided around the baffle plate to be movable in an axial direction of the baffle plate along the sidewall of the baffle plate. The driving device moves the shutter along the sidewall of the baffle plate. The plurality of through holes are disposed in the sidewall of the baffle plate so that synthesized conductance of the through holes, which are not covered by the shutter, is increased with respect to a movement amount of the shutter as the shutter is moved downward.Type: ApplicationFiled: December 2, 2016Publication date: May 2, 2019Applicant: TOKYO ELECTRON LIMITEDInventors: Yuki HOSAKA, Yoshihiro UMEZAWA, Toshiki NAKAJIMA, Mayo UDA
-
Publication number: 20190098740Abstract: A plasma processing apparatus includes an antenna configured to generate plasma of a processing gas in a chamber. The antenna includes: an inner coil provided around the gas supply unit to surround a gas supply unit; and an outer coil provided around the gas supply unit and the inner coil to surround them. The outer coil is configured such that both ends of a wire forming the outer coil are opened; power is supplied from a power supply unit to a central point of the wire; the vicinity of the central point of the wire is grounded; and the outer coil resonates at a wavelength that is a half of a wavelength of the high frequency power. The inner coil is configured such that both ends of a wire forming the inner coil are connected through a capacitor and the inner coil is inductively coupled with the inner coil.Type: ApplicationFiled: September 27, 2018Publication date: March 28, 2019Applicant: TOKYO ELECTRON LIMITEDInventors: Yohei YAMAZAWA, Takehisa SAITO, Mayo UDA, Keigo TOYODA, Alok RANJAN, Toshiki NAKAJIMA
-
Patent number: 10192774Abstract: A temperature control device includes a moving stage allowed to be heated and configured to mount a processing target object on a top surface thereof; a cooling body allowed to be cooled and fixed at a position under the moving stage; a shaft, having one end connected to the moving stage; the other end positioned under the cooling body; a first flange provided at the other end; and a second flange provided between the first flange and the cooling body, extended between the one end and the other end; a driving plate, provided between the first flange and the second flange, having a top surface facing the second flange and a bottom surface opposite to the top surface; an elastic body provided between the bottom surface of the driving plate and the first flange; and a driving unit configured to move the driving plate up and down.Type: GrantFiled: September 24, 2015Date of Patent: January 29, 2019Assignee: TOKYO ELECTRON LIMITEDInventors: Yuki Hosaka, Yoshihiro Umezawa, Toshiki Nakajima, Koichi Nagakura
-
Publication number: 20170301579Abstract: A temperature control device includes a moving stage allowed to be heated and configured to mount a processing target object on a top surface thereof; a cooling body allowed to be cooled and fixed at a position under the moving stage; a shaft, having one end connected to the moving stage; the other end positioned under the cooling body; a first flange provided at the other end; and a second flange provided between the first flange and the cooling body, extended between the one end and the other end; a driving plate, provided between the first flange and the second flange, having a top surface facing the second flange and a bottom surface opposite to the top surface; an elastic body provided between the bottom surface of the driving plate and the first flange; and a driving unit configured to move the driving plate up and down.Type: ApplicationFiled: September 24, 2015Publication date: October 19, 2017Inventors: Yuki Hosaka, Yoshihiro Umezawa, Toshiki Nakajima, Koichi Nagakura
-
Publication number: 20170301568Abstract: The mechanism includes a pipe and a valve provided in the pipe. The pipe is configured to connect a gas source and a semiconductor manufacturing apparatus. The valve is configured to control a flow rate of the gas. The valve includes a housing and a columnar shaft. The housing includes an inlet and an outlet. A gas flows from the gas source into the internal space through the inlet. A gas flows from the internal space to the semiconductor manufacturing apparatus through the outlet. A gap is provided between an outer peripheral surface of the shaft and an inner wall surface of the housing. The shaft is accommodated in the internal space of the housing and is rotatable. A through hole which penetrates the shaft is formed on the outer peripheral surface of the shaft. Both ends of the through hole correspond to the inlet and the outlet.Type: ApplicationFiled: April 11, 2017Publication date: October 19, 2017Applicant: TOKYO ELECTRON LIMITEDInventors: Yuki HOSAKA, Yoshihiro UMEZAWA, Toshiki NAKAJIMA, Mayo UDA, Kenichi SHIMONO
-
Publication number: 20170092513Abstract: A plasma processing apparatus includes a baffle structure between a mounting table and a processing chamber. The baffle structure has a first member and a second member. The first member has a first cylindrical part extending between the mounting table and the processing chamber, and a plurality of through-holes elongated in the vertical direction is formed in an array in the circumferential direction in the first cylindrical part. The second member has a second cylindrical part having an inner diameter greater than the outer diameter of the cylindrical part for the first member. The second member moves up and down in a region that includes the space between the first member and the processing chamber.Type: ApplicationFiled: June 5, 2015Publication date: March 30, 2017Applicant: TOKYO ELECTRON LIMITEDInventors: Yuki HOSAKA, Yoshihiro UMEZAWA, Toshiki NAKAJIMA
-
Publication number: 20160260582Abstract: A baffle structure of a plasma processing apparatus includes a first member and at least one second member. The first member includes a cylindrical portion extending between a placement table and a processing container. A plurality of vertically elongated through holes are formed in the cylindrical portion to be arranged in the circumferential direction. The at least one second member is disposed in the outside of the cylindrical portion of the first member in the radial direction. The at least one second member is arranged to form a cylindrical body having an inner diameter larger than the outer diameter of the cylindrical portion. The vertical positions of a plurality of second members may be individually changed. Or, the horizontal position of a single second member may be changed. Or, the single second member may be made to be inclined.Type: ApplicationFiled: February 29, 2016Publication date: September 8, 2016Applicant: TOKYO ELECTRON LIMITEDInventors: Yuki HOSAKA, Yoshihiro UMEZAWA, Toshiki NAKAJIMA, Mayo UDA