Abstract: The invention provides a chemical-amplification positive-working photoresist composition suitable for forming a resist film of a relatively large thickness on a substrate in addition to other advantages. The inventive composition contains (A) a photoacid-generating agent, (B) an alkali-insoluble resin capable of being imparted with increased alkali-solubility by interaction with an acid, (C) an alkali-soluble resin and (D) an organic solvent, wherein the component (C) is (C1) a polyhydroxystyrene or a copolymer having at least 80% by mass of the hydroxystyrene units in an amount not exceeding 15 parts by mass relative to 100 parts by mass of the total amount of the components (B) and (C).

Abstract: A chemically amplified positive photoresist composition for thick film that is used for forming a thick-film photoresist layer with a film thickness of 10 to 150 ?m on top of a support, comprising (A) a compound that generates acid on irradiation with active light or radiation, (B) a resin that displays increased alkali solubility under the action of acid, and (C) an alkali-soluble resin, wherein the component (B) comprises a resin formed from a copolymer containing a structural unit (b1) with a specific structure.

Abstract: A chemically amplified positive photoresist composition for thick film that is used for forming a thick-film photoresist layer with a film thickness of 10 to 150 ?m on top of a support, including (A) a compound that generates acid on irradiation with active light or radiation, and (B) a resin that displays increased alkali solubility under the action of acid, wherein the component (B) comprises a resin containing a structural unit (b1) with a specific structure, and another resin containing a structural unit (b2) with a specific structure.

Abstract: There is provided a positive photoresist composition capable of forming a pattern with excellent resolution, excellent resistance to reflection off the substrate, and excellent perpendicularity. The positive photoresist composition comprises (A) an alkali-soluble novolak resin in which a portion of the hydrogen atoms of all the phenolic hydroxyl groups are substituted with 1,2-naphthoquinonediazidesulfonyl groups, and (B) a dissolution promoter represented by a general formula (b-1) and/or a general formula (b-11) shown below.

Abstract: A negative photoresist composition is used for the formation of thick films and includes (A) a novolak resin, (B) a plasticizer, (C) a crosslinking agent and (D) an acid generator. The composition is applied onto a substrate and thereby yields a photoresist film 5 to 100 ?m thick. Likewise, the composition is applied onto a substrate of an electronic part, is patterned, is plated and thereby yields a bump.

Abstract: A chemically amplified positive photoresist composition for thick film that is used for forming a thick-film photoresist layer with a film thickness of 10 to 150 ?m on top of a support, comprising (A) a compound that generates acid on irradiation with active light or radiation, (B) a resin that displays increased alkali solubility under the action of acid, and (C) an alkali-soluble resin, wherein the component (B) comprises a resin formed from a copolymer containing a structural unit (b1) with a specific structure.

Abstract: A positive photoresist composition comprising an alkali-soluble novolak resin (A) containing a structural unit (a1) represented by a general formula (I) shown below, and a structural unit (a2) represented by a general formula (II) shown below, and a photosensitizer (B)

Abstract: A negative photoresist composition is used for the formation of thick films and includes (A) a novolak resin, (B) a plasticizer, (C) a crosslinking agent and (D) an acid generator. The composition is applied onto a substrate and thereby yields a photoresist film 5 to 100 ?m thick. Likewise, the composition is applied onto a substrate of an electronic part, is patterned, is plated and thereby yields a bump.

Abstract: There is provided a positive photoresist composition capable of forming a pattern with excellent resolution, excellent resistance to reflection off the substrate, and excellent perpendicularity. The positive photoresist composition comprises (A) an alkali-soluble novolak resin in which a portion of the hydrogen atoms of all the phenolic hydroxyl groups are substituted with 1,2-naphthoquinonediazidesulfonyl groups, and (B) a dissolution promoter represented by a general formula (b-1) and/or a general formula (b-11) shown below.

Abstract: A means for increasing development velocity of a positive photoresist composition is provided which contains a photosensitive novolak resin formed by replacing some hydrogen atoms within those of all phenolic hydroxyl groups of alkali soluble novolak resin by 1,2-naphthoquinonediazide sulfonyl group. This means is positive photoresist composition and a formation method of a resist pattern using the composition which contains (A) a photosensitive novolak resin formed by replacing some hydrogen atoms within those of all phenolic hydroxyl groups of alkali soluble novolak resin by 1,2-naphthoquinonediazide sulfonyl group, which is dissolved in (B) propylene glycol alkyl ether acetate.

Abstract: A positive photoresist composition comprising an alkali-soluble novolak resin (A) containing a structural unit (a1) represented by a general formula (I) shown below, and a structural unit (a2) represented by a general formula (II) shown below, and a photosensitizer (B).

Abstract: A chemically amplified positive photoresist composition for thick film that is used for forming a thick-film photoresist layer with a film thickness of 10 to 150 ?m on top of a support, including (A) a compound that generates acid on irradiation with active light or radiation, and (B) a resin that displays increased alkali solubility under the action of acid, wherein the component (B) includes a resin formed from a copolymer containing a structural unit (b1) with a specific structure.

Abstract: A chemically amplified positive photoresist composition for thick film that is used for forming a thick-film photoresist layer with a film thickness of 10 to 150 ?m on top of a support, comprising (A) a compound that generates acid on irradiation with active light or radiation, (B) a resin that displays increased alkali solubility under the action of acid, and (C) an alkali-soluble resin, wherein the component (B) comprises a resin formed from a copolymer containing a structural unit (b1) with a specific structure.

Abstract: A chemically amplified positive photoresist composition for thick film that is used for forming a thick-film photoresist layer with a film thickness of 10 to 150 ?m on top of a support, including (A) a compound that generates acid on irradiation with active light or radiation, and (B) a resin that displays increased alkali solubility under the action of acid, wherein the component (B) comprises a resin containing a structural unit (b1) with a specific structure, and another resin containing a structural unit (b2) with a specific structure.

Abstract: A chemically amplified positive photoresist composition for thick film that is used for forming a thick-film photoresist layer with a film thickness of 10 to 150 ?m on top of a support, including (A) a compound that generates acid on irradiation with active light or radiation, and (B) a resin that displays increased alkali solubility under the action of acid, wherein the component (B) includes a resin formed from a copolymer containing a structural unit (b1) with a specific structure.

Abstract: A chemically amplified positive photoresist composition for thick film that is used for forming a thick-film photoresist layer with a film thickness of 10 to 150 ?m on top of a support, comprising (A) a compound that generates acid on irradiation with active light or radiation, (B) a resin that displays increased alkali solubility under the action of acid, and (C) an alkali-soluble resin, wherein the component (B) comprises a resin formed from a copolymer containing a structural unit (b1) with a specific structure.

Abstract: A negative photoresist composition is used for the formation of thick films and includes (A) a novolak resin, (B) a plasticizer, (C) a crosslinking agent and (D) an acid generator. The composition is applied onto a substrate and thereby yields a photoresist film 5 to 100 ?m thick. Likewise, the composition is applied onto a substrate of an electronic part, is patterned, is plated and thereby yields a bump.

Abstract: A negative photoresist composition is used for the formation of thick films and includes (A) a novolak resin, (B) a plasticizer, (C) a crosslinking agent and (D) an acid generator. The composition is applied onto a substrate and thereby yields a photoresist film 5 to 100 ?m thick. Likewise, the composition is applied onto a substrate of an electronic part, is patterned, is plated and thereby yields a bump.

Abstract: A negative photoresist composition is used for the formation of thick films and includes (A) a novolak resin, (B) a plasticizer, (C) a crosslinking agent and (D) an acid generator. The composition is applied onto a substrate and thereby yields a photoresist film 5 to 100 ?m thick. Likewise, the composition is applied onto a substrate of an electronic part, is patterned, is plated and thereby yields a bump.

Abstract: A chemically amplified negative photoresist composition is used for the formation of thick films having a thickness of 20 to 150 ?m and includes (A) an alkali-soluble resin, (B) a compound which generates an acid upon irradiation with active light or radiant ray, and (C) a compound which serves as a crosslinking agent in the presence of an acid. The alkali-soluble resin (A) includes (a1) a novolak resin having a weight average molecular weight of from 5000 to 10000, and (a2) a polymer containing at least a hydroxystyrene constitutional unit and having a weight average molecular weight of less than or equal to 5000.