Abstract: This backing material for ultrasonic probes substantially comprises porous amorphous carbon.

Abstract: Provided are: a carbonaceous acoustic matching layer which exhibits satisfactory mechanical strength, in which losses at a layer interface are suppressed as far as possible and in which the degree of variation in acoustic impedance in the thickness direction can be increased; and a method for producing same. The carbonaceous acoustic matching layer is obtained by dispersing filler particles, which are selected on the basis of the desired acoustic impedance of each layer, in a resin such as a furan resin, a phenol resin or a vinyl chloride resin, curing, laminating, and then carbonizing the resin by heating in a non-oxidizing atmosphere, amorphous carbon, which is obtained by the resin carbonization, is integrated across all the layers. The blending proportion of the filler particles is decided so that the difference in coefficient of linear contraction caused by the carbonization is at a minimum between adjacent layers.

Abstract: Provided are: a carbonaceous acoustic matching layer which exhibits satisfactory mechanical strength, in which losses at a layer interface are suppressed as far as possible and in which the degree of variation in acoustic impedance in the thickness direction can be increased; and a method for producing same. The carbonaceous acoustic matching layer is obtained by dispersing filler particles, which are selected on the basis of the desired acoustic impedance of each layer, in a resin such as a furan resin, a phenol resin or a vinyl chloride resin, curing, laminating, and then carbonizing the resin by heating in a non-oxidizing atmosphere, amorphous carbon, which is obtained by the resin carbonization, is integrated across all the layers. The blending proportion of the filler particles is decided so that the difference in coefficient of linear contraction caused by the carbonization is at a minimum between adjacent layers.

Abstract: A centrifugal dryer of the present invention includes: a chamber for performing drying processing for plural substrates; a cradle, installed inside chamber, and drying plural substrates by rotation driving in a state of being held therein; and an elastic wave sensor for detecting an elastic wave generating upon striking of a chip from plural substrates to said chamber during the processing therefor.

Abstract: A gas analyzer for a semiconductor treater improved to be capable of monitoring leakage or change of gas composition influencing treatability of the semiconductor treater in situ is provided. A duct is provided on the outer wall of a chamber of the semiconductor treater for taking out gas to be analyzed from the chamber. A gas analytic chamber stores the gas to be analyzed taken out through the duct. A discharge formation part is mounted in the vicinity of the gas analytic chamber. The discharge formation part includes a high frequency generation coil generating a high frequency and forming a plasma of the gas to be analyzed in the gas analytic chamber. This gas analyzer further comprises a spectrometer analyzing the emission wavelength of the plasma of the gas to be analyzed.

Abstract: A defect inspecting device for a wafer is built in a positioning device for positioning a wafer 1, as a substrate to be processed, in a semiconductor manufacturing process. Light is irradiated on the wafer held on a vacuum holding base 2 while rotating the wafer at least one rotation from a position where the wafer is positioned and the scattered light is received. An operation unit 14 and a control unit 15 judge that if the intensity of the scattered light exceeds a predetermined threshold, a defect is detected on the wafer 1.

Abstract: A defect inspecting device for a wafer is built in a positioning device for positioning a wafer 1, as a substrate to be processed, in a semiconductor manufacturing process. Light is irradiated on the wafer held on a vacuum holding base 2 while rotating the wafer at least one rotation from a position where the wafer is positioned and the scattered light is received. An operation unit 14 and a control unit 15 judge that if the intensity of the scattered light exceeds a predetermined threshold, a defect is detected on the wafer 1.

Abstract: A centrifugal dryer of the present invention includes: a chamber for performing drying processing for plural substrates; a cradle, installed inside chamber, and drying plural substrates by rotation driving in a state of being held therein; and an elastic wave sensor for detecting an elastic wave generating upon striking of a chip from plural substrates to said chamber during the processing therefor.

Abstract: A gas analyzer for a semiconductor treater improved to be capable of monitoring leakage or change of gas composition influencing treatability of the semiconductor treater in situ is provided. A duct is provided on the outer wall of a chamber of the semiconductor treater for taking out gas to be analyzed from the chamber. A gas analytic chamber stores the gas to be analyzed taken out through the duct. A discharge formation part is mounted in the vicinity of the gas analytic chamber. The discharge formation part includes a high frequency generation coil generating a high frequency and forming a plasma of the gas to be analyzed in the gas analytic chamber. This gas analyzer further comprises a spectrometer analyzing the emission wavelength of the plasma of the gas to be analyzed.