Patents by Inventor Toshiki Sasaki

Toshiki Sasaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9391289
    Abstract: A light-emitting element having high external quantum efficiency is provided. A light-emitting element having a long lifetime is provided. A light-emitting layer is provided between a pair of electrodes. The light-emitting layer is a stack of a first light-emitting layer, which contains at least a first phosphorescent compound, a first organic compound having an electron-transport property, and a second organic compound having a hole-transport property and is provided on the anode side, and a second light-emitting layer, which contains at least a second phosphorescent compound and the first organic compound having an electron-transport property. A combination of the first organic compound and the second organic compound forms an exciplex.
    Type: Grant
    Filed: March 12, 2013
    Date of Patent: July 12, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hiromi Seo, Satoko Shitagaki, Satoshi Seo, Takahiro Ushikubo, Toshiki Sasaki, Shogo Uesaka
  • Publication number: 20160190500
    Abstract: A light-emitting element that emits light with high color purity, a light-emitting element that emits light at high emission efficiency, or a light-emitting element with reduced power consumption. The light-emitting element includes a first electrode, a second electrode, and an EL layer. The first electrode is configured to reflect light. The second electrode is configured to reflect light and transmit light. The EL layer is between the first electrode and the second electrode. The EL layer includes a guest material. The guest material is configured to convert triplet excitation energy into light emission. The emission spectrum of the guest material in a dichloromethane solution has a peak in a wavelength region ranging from 440 nm to 470 nm and has a full width at half maximum of greater than or equal to 20 nm and less than or equal to 80 nm.
    Type: Application
    Filed: December 22, 2015
    Publication date: June 30, 2016
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takeyoshi WATABE, Toshiki SASAKI, Satoshi SEO
  • Publication number: 20160164035
    Abstract: A light-emitting element having high external quantum efficiency is provided. A light-emitting element having a long lifetime is provided. A light-emitting element includes a light-emitting layer between a pair of electrodes. The light-emitting layer contains at least a phosphorescent compound, a first organic compound (host material) having an electron-transport property, and a second organic compound (assist material) having a hole-transport property. The light-emitting layer has a stacked-layer structure including a first light-emitting layer and a second light-emitting layer, and the first light-emitting layer contains a higher proportion of the second organic compound than the second light-emitting layer. In the light-emitting layer (the first light-emitting layer and the second light-emitting layer), a combination of the first organic compound and the second organic compound forms an exciplex.
    Type: Application
    Filed: February 11, 2016
    Publication date: June 9, 2016
    Inventors: Hiromi SEO, Satoko SHITAGAKI, Satoshi SEO, Takahiro USHIKUBO, Toshiki SASAKI, Shogo UESAKA
  • Patent number: 9343691
    Abstract: A novel light-emitting device is provided. A novel light-emitting device with high emission efficiency, low power consumption, and small viewing angle dependence of chromaticity is provided. The light-emitting device includes at least one light-emitting element and one optical element. A spectrum of light emitted from the light-emitting element through the optical element in a range of greater than 0° and less than or equal to 70° with respect to a normal vector of the light-emitting element has a first local maximum value in a wavelength range of greater than or equal to 400 nm and less than 480 nm and a second local maximum value located on a longer wavelength side than the first local maximum value. The intensity ratio of the second local maximum value to the first local maximum value is less than or equal to 15%.
    Type: Grant
    Filed: August 4, 2015
    Date of Patent: May 17, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoshi Seo, Toshiki Sasaki, Nobuharu Ohsawa
  • Publication number: 20160133878
    Abstract: A light-emitting element including a first electrode, a second electrode, and an EL layer provided between the first and second electrodes is provided. The first electrode includes a conductive layer, a first transparent conductive layer in contact with the conductive layer, and a second transparent conductive layer in contact with the first transparent conductive layer. The first transparent conductive layer contains a first oxide. The second transparent conductive layer contains a second oxide. The conductive layer has a function of reflecting light. The first oxide contains In and M (M represents Al, Si, Ti, Ga, Y, Zr, La, Ce, Nd, or Hf). The second oxide contains In. The resistivity of the second transparent conductive layer is lower than that of the first transparent conductive layer. The thickness of the second transparent conductive layer is greater than or equal to that of the first transparent conductive layer.
    Type: Application
    Filed: November 4, 2015
    Publication date: May 12, 2016
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shogo Uesaka, Toshiki SASAKI, Nobuharu OHSAWA, Satoshi SEO
  • Publication number: 20160126500
    Abstract: To provide a novel light-emitting element or a novel light-emitting device with high emission efficiency and low power consumption, a light-emitting element having a plurality of light-emitting layers between a pair of electrodes includes a lower electrode, a first light-emitting layer over the lower electrode, a charge-generation layer over the first light-emitting layer, a second light-emitting layer over the charge-generation layer, and an upper electrode over the second light-emitting layer. An emission spectrum of the first light-emitting layer peaks at a longer wavelength than an emission spectrum of the second light-emitting layer. A distance of between a bottom surface of the upper electrode and a bottom surface of the first light-emitting layer is less than or equal to 130 nm.
    Type: Application
    Filed: October 22, 2015
    Publication date: May 5, 2016
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shogo Uesaka, Toshiki Sasaki, Riho Kataishi, Satoshi Seo
  • Publication number: 20160118625
    Abstract: An electrode layer having high reflectance and a light-emitting element having high emission efficiency are provided. The light-emitting element includes a first electrode layer, a second electrode layer, and an EL layer between the first electrode layer and the second electrode layer. The first electrode layer includes a conductive layer and an oxide layer in contact with the conductive layer. The conductive layer has a function of reflecting light. The oxide layer includes In and M (M represents Al, Si, Ti, Ga, Y, Zr, Sn, La, Ce, Nd, or Hf). A content of the M in the oxide layer is higher than or equal to a content of the In.
    Type: Application
    Filed: October 20, 2015
    Publication date: April 28, 2016
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shogo Uesaka, Toshiki Sasaki, Nobuharu Ohsawa
  • Publication number: 20160118626
    Abstract: To provide a novel light-emitting device, a light-emitting device that emits light of a plurality of colors includes a first light-emitting element and a second light-emitting element. The first light-emitting element includes a first lower electrode, a first light-emitting layer over the first lower electrode, a second light-emitting layer over the first light-emitting layer, and an upper electrode over the second light-emitting layer. The second light-emitting element includes a second lower electrode, the first light-emitting layer over the second lower electrode, the second light-emitting layer over the first light-emitting layer, and the upper electrode over the second light-emitting layer. An emission spectrum of the first light-emitting layer peaks at a longer wavelength than an emission spectrum of the second light-emitting layer.
    Type: Application
    Filed: October 22, 2015
    Publication date: April 28, 2016
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoshi Seo, Toshiki SASAKI
  • Publication number: 20160087226
    Abstract: A light-emitting element with improved heat resistance is provided without losing its advantages such as thinness, lightness, and low power consumption. A light-emitting element is provided which includes a first electrode, a second electrode, and an EL layer between the first electrode and the second electrode, in which the EL layer includes a layer containing a condensed aromatic compound or a condensed heteroaromatic compound, and a layer containing 2,9-bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen) in contact with the layer containing the condensed aromatic compound or the condensed heteroaromatic compound.
    Type: Application
    Filed: December 4, 2015
    Publication date: March 24, 2016
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tsunenori Suzuki, Toshiki SASAKI, Riha KATAISHI, Satoshi SEO
  • Publication number: 20160079314
    Abstract: A light-emitting device, an electronic device, or a lighting device with low power consumption and high reliability is provided. The light-emitting device includes a first light-emitting element, a second light-emitting element, a third light-emitting element, and a fourth light-emitting element. The first to fourth light-emitting elements include the same EL layer between an anode and a cathode. The EL layer includes a first light-emitting layer and a second light-emitting layer. The first light-emitting layer contains a fluorescent substance. The peak wavelength of an emission spectrum of the fluorescent substance in a toluene solution of the fluorescent substance is 440 nm to 460 nm, preferably 440 nm to 455 nm. The second light-emitting layer contains a phosphorescent substance. The first light-emitting element exhibits blue emission. The second light-emitting element exhibits green emission. The third light-emitting element exhibits red emission.
    Type: Application
    Filed: August 5, 2015
    Publication date: March 17, 2016
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoshi Seo, Toshiki SASAKI, Tsunenori SUZUKI, Sachiko KAWAKAMI, Naoaki HASHIMOTO
  • Patent number: 9263693
    Abstract: A light-emitting element having high external quantum efficiency is provided. A light-emitting element having a long lifetime is provided. A light-emitting element includes a light-emitting layer between a pair of electrodes. The light-emitting layer contains at least a phosphorescent compound, a first organic compound (host material) having an electron-transport property, and a second organic compound (assist material) having a hole-transport property. The light-emitting layer has a stacked-layer structure including a first light-emitting layer and a second light-emitting layer, and the first light-emitting layer contains a higher proportion of the second organic compound than the second light-emitting layer. In the light-emitting layer (the first light-emitting layer and the second light-emitting layer), a combination of the first organic compound and the second organic compound forms an exciplex.
    Type: Grant
    Filed: June 4, 2015
    Date of Patent: February 16, 2016
    Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Hiromi Seo, Satoko Shitagaki, Satoshi Seo, Takahiro Ushikubo, Toshiki Sasaki, Shogo Uesaka
  • Publication number: 20160043338
    Abstract: A novel light-emitting device is provided. A novel light-emitting device with high emission efficiency, low power consumption, and small viewing angle dependence of chromaticity is provided. The light-emitting device includes at least one light-emitting element and one optical element. A spectrum of light emitted from the light-emitting element through the optical element in a range of greater than 0° and less than or equal to 70° with respect to a normal vector of the light-emitting element has a first local maximum value in a wavelength range of greater than or equal to 400 nm and less than 480 nm and a second local maximum value located on a longer wavelength side than the first local maximum value. The intensity ratio of the second local maximum value to the first local maximum value is less than or equal to 15%.
    Type: Application
    Filed: August 4, 2015
    Publication date: February 11, 2016
    Inventors: Satoshi SEO, Toshiki SASAKI, Nobuharu OHSAWA
  • Publication number: 20160027849
    Abstract: To provide a display device with low power consumption. The display device includes a plurality of pixels each having a light-emitting element having a structure in which light emitted from a light-emitting layer is resonated between a reflective electrode and a light-transmitting electrode, wherein no color filter layers are provided or color filter layers with high transmittance are provided in pixels for light with relatively short wavelengths (e.g., pixels for blue and/or green), and a color filter layer is selectively provided in pixels for light with a long wavelength (e.g., pixels for red), and thereby maintaining color reproducibility and consuming less power.
    Type: Application
    Filed: October 2, 2015
    Publication date: January 28, 2016
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Nobuharu OHSAWA, Toshiki SASAKI, Satoshi SEO
  • Patent number: 9231232
    Abstract: A light-emitting element, a light-emitting module, a light-emitting panel, or a light-emitting device in which loss due to electrical resistance is reduced is provided. The present invention focuses on a surface of an electrode containing a metal and on a layer containing a light-emitting organic compound. The layer containing a light-emitting organic compound is provided between one electrode including a first metal, whose surface is provided with a conductive inclusion, and the other electrode.
    Type: Grant
    Filed: June 3, 2014
    Date of Patent: January 5, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshiki Sasaki, Nozomu Sugisawa, Shunpei Yamazaki
  • Patent number: 9224976
    Abstract: Provided is a light-emitting element including an anode over a substrate, a layer containing a composite material in which a metal oxide is added to an organic compound, a light-emitting layer, and a cathode having a light-transmitting property. The anode is a stack of a film of an aluminum alloy and a film containing titanium or titanium oxide. The film containing titanium or titanium oxide is in contact with the layer containing a composite material.
    Type: Grant
    Filed: November 17, 2009
    Date of Patent: December 29, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Nozomu Sugisawa, Toshiki Sasaki
  • Patent number: 9209426
    Abstract: A light-emitting element with improved heat resistance is provided without losing its advantages such as thinness, lightness, and low power consumption. A light-emitting element is provided which includes a first electrode, a second electrode, and an EL layer between the first electrode and the second electrode, in which the EL layer includes a layer containing a condensed aromatic compound or a condensed heteroaromatic compound, and a layer containing 2,9-bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen) in contact with the layer containing the condensed aromatic compound or the condensed heteroaromatic compound.
    Type: Grant
    Filed: August 7, 2014
    Date of Patent: December 8, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tsunenori Suzuki, Toshiki Sasaki, Riho Kataishi, Satoshi Seo
  • Publication number: 20150349284
    Abstract: Emission efficiency of a light-emitting element is improved. The light-emitting element has a pair of electrodes and an EL layer between the pair of electrodes. The EL layer includes a first light-emitting layer and a second light-emitting layer. The first light-emitting layer includes a fluorescent material and a host material. The second light-emitting layer includes a phosphorescent material, a first organic compound, and a second organic compound. An emission spectrum of the second light-emitting layer has a peak in a yellow wavelength region. The first organic compound and the second organic compound form an exciplex.
    Type: Application
    Filed: May 29, 2015
    Publication date: December 3, 2015
    Inventors: Satoshi SEO, Takahiro ISHISONE, Nobuharu OHSAWA, Yusuke NONAKA, Toshiki SASAKI
  • Publication number: 20150349278
    Abstract: To provide a long-lifetime organometallic iridium complex exhibiting yellow light emission with high emission efficiency as a novel substance. The organometallic iridium complex includes a ligand in which an unsubstituted phenyl group is bonded to each of the 2-position and the 5-position of pyrimidine. The organometallic iridium complex has a structure represented by General Formula (G1).
    Type: Application
    Filed: May 29, 2015
    Publication date: December 3, 2015
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hideko Inoue, Tomoka HARA, Satoshi SEO, Toshiki SASAKI, Kunihiko SUZUKI
  • Publication number: 20150333229
    Abstract: A light-emitting device includes a first light-emitting element emitting blue light, a second light-emitting element emitting green light, and a third light-emitting element emitting red light. A first reflective electrode and a first transparent conductive film, a second reflective electrode and a second transparent conductive film, and a third reflective electrode and a third transparent conductive film are stacked in the first to third light-emitting elements, respectively. A first light-emitting layer, a charge-generation layer, a second light-emitting layer, and an electrode are stacked in this order over each of the first transparent conductive film, the second transparent conductive film, and the third transparent conductive film. The electrode has functions of transmitting and reflecting light. The first to third reflective electrodes contain silver. The first transparent conductive film is thicker than the third transparent conductive film.
    Type: Application
    Filed: May 12, 2015
    Publication date: November 19, 2015
    Inventors: Satoshi SEO, Nobuharu OHSAWA, Toshiki SASAKI
  • Publication number: 20150318335
    Abstract: An inverted-structure light-emitting element is provided. One embodiment of the invention disclosed in this specification is a light-emitting element including a cathode, a layer serving as a buffer over the cathode, an electron-injection layer over the layer serving as a buffer, a light-emitting layer over the electron-injection layer, and an anode over the light-emitting layer. The electron-injection layer includes an alkali metal or an alkaline earth metal. The layer serving as a buffer includes an electron-transport material. In the inverted-structure light-emitting element, contact of the alkali metal or alkaline earth metal included in a material of the electron-injection layer with the already formed cathode increases the driving voltage of an EL element and reduces emission efficiency. This problem becomes prominent particularly when the cathode includes an oxide conductive film. To prevent this, the layer serving as a buffer is provided between the cathode and the electron-injection layer.
    Type: Application
    Filed: April 28, 2015
    Publication date: November 5, 2015
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Riho KATAISHI, Toshiki SASAKI, Satoshi SEO