Abstract: Provided is a battery system which can ensure high safety even when the battery system is constructed using a mechanical relay. The battery system includes: a battery module where a plurality of battery cells are connected to each other in series; a switching circuit which is connected to the battery module in series; a control unit which controls the switching circuit; and a welding diagnosis circuit which diagnoses welding of the switching circuit, wherein the switching circuit is constituted by connecting a first relay switch and a second relay switch in series, and the welding diagnosis circuit includes a voltage measuring device which measures a voltage between the first relay switch and the second relay switch.

Abstract: Provided is a battery system including battery modules each having a plurality of batteries and a battery module control unit for controlling the plurality of batteries, and battery pack control units for controlling a plurality of the battery module control units, wherein the plurality of the battery module control units are connected in serial by wires between modules, wherein each battery module control unit includes a first input/output terminal for inputting or outputting information to or from a battery module control unit of one adjacent battery module and a second input/output terminal for inputting or outputting information to or from a battery module control unit of another adjacent battery module, and wherein an input impedance of the first input/output terminal is smaller than an input impedance of the second input/output terminal.

Abstract: A measuring apparatus is capable of separately measuring at least one of the purely resistive component and the reactance component of a measured circuit. The measuring apparatus applies an AC voltage to the measured circuit and detects a current flowing in the measured circuit. When doing so, a first detection signal whose amplitude changes in accordance with an amplitude of a real component of the current and a second detection signal whose amplitude changes in accordance with an amplitude of an imaginary component are generated. The at least one of a purely resistive component and a reactance component of the measured circuit is then calculated using the first detection signal and the second detection signal.

Abstract: A vertical plasma processing apparatus for a semiconductor process includes an airtight auxiliary chamber defined by a casing having an insulative inner surface and integrated with a process container. The auxiliary chamber includes a plasma generation area extending over a length corresponding to a plurality of target substrates in a vertical direction. A partition plate having an insulative surface is located between a process field and the plasma generation. The partition plate includes a gas passage disposed over a length corresponding to the plurality of target substrates in a vertical direction. A process gas is exited while passing through the plasma generation area, and is then supplied through the gas passage to the process field.

Abstract: A vertical plasma processing apparatus for performing a plasma process on a plurality of target objects together at a time includes an activation mechanism configured to turn a process gas into plasma. The activation mechanism includes a vertically elongated plasma generation box attached to a process container at a position corresponding to a process field to form a plasma generation area airtightly communicating with the process field, an ICP electrode provided to the plasma generation box, and an RF power supply connected to the electrode.

Abstract: There is provided a battery system having a plurality of storage batteries capable of charging and discharging, and at least two or more of the storage batteries are connected in series. The battery system includes a connecting terminal capable of connecting a storage battery in parallel with any one of the other storage batteries. The battery system is capable of replacing the storage battery without restricting the configuration to be serial connection or parallel connection, while avoiding decline of the output power.

Abstract: A plasma treating apparatus adapted to provide a predetermined plasma treatment to an object W to be treated comprises a processing chamber 12 configured to be capable of being vacuumed, an object holding means 20 adapted to hold the object to be treated, a high frequency power source 58 adapted to generate high frequency voltage, a plasma gas supplying means 38 adapted to supply a plasma generating gas to be treated to generate plasma to the processing chamber, a pair of plasma electrodes 56, 56B connected to the output side of the high frequency power source via wirings 60 to generate plasma in the processing chamber, the pair of plasma electrodes being brought into an excited electrode state. In addition, a high frequency matching means 72 is provided in the middle of the wirings. In this case, each of the plasma electrodes 56A, 56B is not grounded. Thus, the plasma density can be increased, and the efficiency of generating plasma can be enhanced.

Abstract: The disclosure discloses a rotating electrical machine that is integrally formed with a reduction device having an input shaft to which a roller gear cam is provided and an output shaft to which cam followers configured to sequentially engage with the roller gear cam is provided on an outer periphery, extending along a direction orthogonal to the input shaft, and is configured to employ one of a field system or an armature as a rotator and the other of the field system or the armature as a stator, including a rotating shaft that is fixed to the rotator and integrally formed as a single shaft with the input shaft of the reduction device.

Abstract: A vertical plasma processing apparatus for performing a plasma process on a plurality of target objects together at a time includes an activation mechanism configured to turn a process gas into plasma. The activation mechanism includes a vertically elongated plasma generation box attached to a process container at a position corresponding to a process field to form a plasma generation area airtightly communicating with the process field, an ICP electrode provided to the plasma generation box, and an RF power supply connected to the electrode.

Abstract: A plasma processing apparatus of the batch type includes a tubular process container having a closed end and an open end opposite to each other, and a process field for accommodating target substrates, the process container including a tubular insulating body. The apparatus further includes a holder configured to hold the target substrates at intervals, a loading mechanism configured to load and unload the holder into and from the process container, and a lid member connected to the loading mechanism and configured to airtightly close the open end. A first electrode is disposed at the closed end of the process container, and a second electrode is disposed at the lid member, to constitute a pair of parallel-plate electrodes. An RF power supply is connected to one of the first and second electrodes and configured to apply an RF power for plasma generation.

Abstract: A measuring apparatus is capable of separately measuring at least one of the purely resistive component and the reactance component of a measured circuit. The measuring apparatus applies an AC voltage to the measured circuit and detects a current flowing in the measured circuit. When doing so, a first detection signal whose amplitude changes in accordance with an amplitude of a real component of the current and a second detection signal whose amplitude changes in accordance with an amplitude of an imaginary component are generated. The at least one of a purely resistive component and a reactance component of the measured circuit is then calculated using the first detection signal and the second detection signal.

Abstract: A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated.

Abstract: A optical disc drive is disclosed. The optical disc drive includes a housing and a tray configured to accommodate a disc therein. The optical disc drive also includes an automatic return-type eject switch, a drive controller, and an eject controller. Mounted in the housing, the automatic return-type eject switch is configured to generate an eject signal. In response to the eject signal, the drive controller ejects the tray. In response to the eject signal, the eject controller supplies an electric power to the optical disc drive, and transmits a pseudo eject signal to the drive controller to eject the tray by way of a line through which the eject signal has been transferred after a predetermined time period from the supply of the electric power has lapsed.

Abstract: A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated.

Abstract: A vertical plasma processing apparatus for a semiconductor process includes a process container having a process field configured to accommodate a plurality of target substrates at intervals in a vertical direction, and a marginal space out of the process field. In processing the target substrates, a control section simultaneously performs supply of a process gas to the process field from a process gas supply circuit and supply of a blocking gas to the marginal space from a blocking gas supply circuit to inhibit the process gas from flowing into the marginal space.

Abstract: A vertical plasma processing apparatus for performing a plasma process on a plurality of target objects together at a time includes an activation mechanism configured to turn a process gas into plasma. The activation mechanism includes a vertically elongated plasma generation box attached to a process container at a position corresponding to a process field and confining a plasma generation area airtightly communicating with the process field, an ICP electrode disposed outside the plasma generation box and extending in a longitudinal direction of the plasma generation box, and an RF power supply connected to the ICP electrode. The ICP electrode includes a separated portion separated from a wall surface of the plasma generation box by a predetermined distance.

Abstract: A silicon-containing insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a purge gas, a first process gas containing a silane family gas, and a second process gas containing a gas selected from the group consisting of nitriding, oxynitriding, and oxidizing gases. This method alternately includes first to fourth steps. The first, second, third, and fourth steps perform supply of the first process gas, purge gas, second process gas, and purge gas, respectively, while stopping supply of the other two gases. The process field is continuously vacuum-exhausted over the first to fourth steps through an exhaust passage provided with an opening degree adjustment valve. An opening degree of the valve in the first step is set to be 5 to 95% of that used in the second and fourth steps.

Abstract: A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated.

Abstract: A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated.

Abstract: A optical disc drive is disclosed. The optical disc drive includes a housing and a tray configured to accommodate a disc therein. The optical disc drive also includes an automatic return-type eject switch, a drive controller, and an eject controller. Mounted in the housing, the automatic return-type eject switch is configured to generate an eject signal. In response to the eject signal, the drive controller ejects the tray. In response to the eject signal, the eject controller supplies an electric power to the optical disc drive, and transmits a pseudo eject signal to the drive controller to eject the tray by way of a line through which the eject signal has been transferred after a predetermined time period from the supply of the electric power has lapsed.