Abstract: An acoustic wave device includes a first acoustic wave chip and a second acoustic wave chip mounted on a substrate, first bumps bonding the first acoustic wave chip to the substrate and including first ground bumps connected to a ground potential, second bumps bonding the second acoustic wave chip to the substrate and including second ground bumps connected to a ground potential. When a number of the first ground bumps is n1, a number of the second ground bumps is n2, a height of the first ground bumps is h1, and a height of the second ground bumps is h2, n1<n2 and h1<h2.

Abstract: To provide a Group III nitride semiconductor light-emitting device exhibiting the improved light extraction efficiency as well as reducing the influence of polarization that a p-type conductivity portion and an n-type conductivity portion occur in the AlGaN layer caused by the Al composition variation, and a production method therefor. A first p-type contact layer is a p-type AlGaN layer. A second p-type contact layer is a p-type AlGaN layer. The Al composition in the first p-type contact layer is reduced with distance from a light-emitting layer. The Al composition in the second p-type contact layer is reduced with distance from the light-emitting layer. The Al composition in the second p-type contact layer is lower than that in the first p-type contact layer. The Al composition variation rate to the unit thickness in the second p-type contact layer is higher than that in the first p-type contact layer.

Abstract: To provide a Group III nitride semiconductor light-emitting device exhibiting the improved light extraction efficiency as well as reducing the influence of polarization that a p-type conductivity portion and an n-type conductivity portion occur in the AlGaN layer caused by the Al composition variation, and a production method therefor. A first p-type contact layer is a p-type AlGaN layer. A second p-type contact layer is a p-type AlGaN layer. The Al composition in the first p-type contact layer is reduced with distance from a light-emitting layer. The Al composition in the second p-type contact layer is reduced with distance from the light-emitting layer. The Al composition in the second p-type contact layer is lower than that in the first p-type contact layer. The Al composition variation rate to the unit thickness in the second p-type contact layer is higher than that in the first p-type contact layer.

Abstract: An FX server, in which an effect engine, Java applet, and effect data are stored, is connected to the Internet via a web server. A user terminal accesses the FX server via the Internet and downloads the effect engine and the Java applet to the user terminal. The Java applet starts the effect engine, which selects desired data from a plurality of effect data pieces, downloads the selected effect data, and adds an effect corresponding to the selected effect data to digital data saved on the user terminal.