Abstract: The present disclosure provides an exhaust gas purification catalyst with increased catalytic activity. The exhaust gas purification catalyst comprises a metal oxide support and Rh particles supported on the metal oxide support, wherein the metal oxide support is doped with a cation having a higher oxidation number than the cation of the metal oxide support. The metal oxide support may be a SrTiO3 support doped with greater than 0 mol % and 8 mol % or lower Nb, a ZrO2 support doped with 5 mol % to 20 mol % Nb, or an Al2O3 support doped with greater than 0 mol % and 7 mol % or lower Ti.

Abstract: The present disclosure provides a method for producing a semiconductor element that can lower the potential risk of malfunction. The production method of the disclosure is a method for producing a semiconductor element which includes providing a semiconductor element precursor, the precursor having a metal electrode layer formed on the surface of a gallium oxide-based single crystal semiconductor layer and a dopant doped in at least part of an exposed portion on the surface of the gallium oxide-based single crystal semiconductor layer where the metal electrode layer is not layered, and annealing treatment of the semiconductor element precursor whereby the dopant is diffused to a portion of the gallium oxide-based single crystal semiconductor layer that are overlapping with the metal electrode layer in the layering direction, to form a Schottky junction between the gallium oxide-based single crystal semiconductor layer and the metal electrode layer.

Abstract: The present disclosure provides a method for producing a semiconductor element that can lower the potential risk of malfunction. The production method of the disclosure is a method for producing a semiconductor element which includes providing a semiconductor element precursor, the precursor having a metal electrode layer formed on the surface of a gallium oxide-based single crystal semiconductor layer and a dopant doped in at least part of an exposed portion on the surface of the gallium oxide-based single crystal semiconductor layer where the metal electrode layer is not layered, and annealing treatment of the semiconductor element precursor whereby the dopant is diffused to a portion of the gallium oxide-based single crystal semiconductor layer that are overlapping with the metal electrode layer in the layering direction, to form a Schottky junction between the gallium oxide-based single crystal semiconductor layer and the metal electrode layer.

Abstract: The present disclosure provides a decorative coating film, which ensures and/or maintains millimeter wave transmission properties even though the decorative coating film is continuously used. The present disclosure relates to a decorative coating film formed on the surface of a resin substrate positioned in the pathway of a radar device, wherein the decorative coating film at least comprises: fine silver particles or fine silver alloy particles, nickel oxide, and a binding resin having light transmission properties, which binds the fine silver particles or the fine silver alloy particles dispersed in the decorative coating film with one another, wherein the shape of the nickel oxide is a wire shape.

Abstract: The present disclosure provides a decorative coating film, which ensures and/or maintains millimeter wave transmission properties even though the decorative coating film is continuously used. The present disclosure relates to a decorative coating film formed on the surface of a resin substrate positioned in the pathway of a radar device, wherein the decorative coating film at least comprises: fine silver particles or fine silver alloy particles, nickel oxide, and a binding resin having light transmission properties, which binds the fine silver particles or the fine silver alloy particles dispersed in the decorative coating film with one another, wherein the shape of the nickel oxide is a wire shape.

Abstract: A production apparatus and a production method for a gallium oxide crystal, including growing a gallium oxide single crystal by VB method, HB method, or VGF method, under an air atmosphere, by using a crucible containing a Pt—Ir-based alloy having an Ir content of 20 to 30 wt %, and the production apparatus (10) includes a vertical Bridgman furnace including: a base body (12); a furnace body (14) in a cylindrical shape having heat resistance, disposed on the base body (12); a lid member (18) occluding the furnace body (14); a heater (20) disposed inside the furnace body (14); a crucible bearing (30) disposed vertically movably penetrating through the base body (12); and a crucible (34) disposed on the crucible bearing (30), heated with the heater (20), the crucible (34) being a crucible (34) containing a Pt—Ir-based alloy having an Ir content of 20 to 30 wt %.

Abstract: The present disclosure provides a decorative coating film, which ensures and/or maintains millimeter wave transmission properties even though the decorative coating film is continuously used. The present disclosure relates to a decorative coating film formed on the surface of a resin substrate positioned in the pathway of a radar device, wherein the decorative coating film at least comprises: fine silver particles or fine silver alloy particles, nickel oxide, and a binding resin having light transmission properties, which binds the fine silver particles or the fine silver alloy particles dispersed in the decorative coating film with one another, wherein the shape of the nickel oxide is a wire shape.

Abstract: Provided is decorative film capable of keeping the brightness and that hardly changes in color during the continuous use. Decorative film is disposed on the surface of a resin base located in a path of a beam of a radar device. The decorative film includes: composite particles, each including a silver particle made of silver and compound including nickel and oxygen, the compound adhering to the silver particle so as to partially surround the surface of the silver particle; and light-transmissive binder resin to bind the composite particles dispersed in the decorative film. Content of the nickel is in a range of 0.5 to 30.0 mass % relative to the silver.