Patents by Inventor Toshimasa Okamura

Toshimasa Okamura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silicon oxide depositing source and coated film
    Patent number: 5532063
    Abstract: A silicon oxide depositing source is a mixture of a metallic silicon powder and a silicon dioxide powder. Both the powders are finely divided to a mean particle size of up to 20 .mu.m. They are mixed to give an oxygen to silicon atom ratio between 1.2:1 and 1.7:1. The source is adapted to be evaporated by an electron beam heating technique, allows the power of an electron beam to be increased without a splash phenomenon, and eventually deposits a silicon oxide thin film having transparency and improved barrier properties.
    Type: Grant
    Filed: July 15, 1994
    Date of Patent: July 2, 1996
    Assignees: Shin-Etsu Chemical Co., Ltd., Nihon Shinku Gijutsu Kabushiki Kaisha
    Inventors: Toshihiko Shindoh, Takeshi Kakegawa, Kazuhiko Urano, Toshimasa Okamura, Tetsuo Suzuki, Masatoshi Sato