Abstract: A hydroponic system (1) using seawater, wherein seawater (W1) is used for hydroponic cultivation of salt-tolerant plants, including a water supply pump (21) that pumps up, from the sea (S), seawater (W1) having a salinity, a bacteria content and an unwanted matter content are less than or equal to predetermined threshold values; a water tub (30) that stores seawater (W1) pumped up by the water supply pump (21) and accommodates salt-tolerant plants (P) to be cultivated; and a filter (27) that removes bacteria and unwanted matter from the seawater (W1) obtained from the sea (S); wherein the seawater (W1) from which the bacteria and the unwanted matter have been removed by the filter (27) is fed to the water tub (30).

Abstract: The present invention provides a plant cultivation method, which enables plant cultivation under high salinity environment for a long time. A method for hydroponic plant cultivation under high salinity environment, comprising a cultivation step of hydroponically growing a plant with a cultivation solution having a sodium chloride concentration of 1% by mass or more, during which a salt resistance imparting treatment is performed at least once by bringing a salt tolerance imparting agent into contact with at least a part of a root of the plant, thereby maintaining salt tolerance of the plant.

Abstract: The present invention provides a plant cultivation method, which enables plant cultivation under high salinity environment for a long time. A method for hydroponic plant cultivation under high salinity environment, comprising a cultivation step of hydroponically growing a plant with a cultivation solution having a sodium chloride concentration of 1% by mass or more, during which a salt resistance imparting treatment is performed at least once by bringing a salt tolerance imparting agent into contact with at least a part of a root of the plant, thereby maintaining salt tolerance of the plant.

Abstract: A hydroponic system (1) using seawater, wherein seawater (W1) is used for hydroponic cultivation of salt-tolerant plants, including a water supply pump (21) that pumps up, from the sea (S), seawater (W1) having a salinity, a bacteria content and an unwanted matter content are less than or equal to predetermined threshold values; a water tub (30) that stores seawater (W1) pumped up by the water supply pump (21) and accommodates salt-tolerant plants (P) to be cultivated; and a filter (27) that removes bacteria and unwanted matter from the seawater (W1) obtained from the sea (S); wherein the seawater (W1) from which the bacteria and the unwanted matter have been removed by the filter (27) is fed to the water tub (30).

Abstract: A mounting system mounts an accessory to a body member of a vehicle. The body member defines an opening and includes a base inserted into the opening. The mounting system includes a hook-shaped first engagement feature engaging the body member and a base aperture. A clip is disposed within the base aperture and the body member defines a second engagement feature. The clip includes two pairs of legs connected at a top portion of the clip, and two flexible tab members extending from the top portion of the clip biased outwardly between the legs into engagement with the inner edge of the body member. A cap includes a cap base and a plunger extending from a central portion of a first side of the cap base. The plunger abuts the flexible tab members, maintaining the flexible tab members in engagement with the body member.

Abstract: A mounting system mounts an accessory to a body member of a vehicle. The body member defines an opening and includes a base inserted into the opening. The mounting system includes a hook-shaped first engagement feature engaging the body member and a base aperture. A clip is disposed within the base aperture and the body member defines a second engagement feature. The clip includes two pairs of legs connected at a top portion of the clip, and two flexible tab members extending from the top portion of the clip biased outwardly between the legs into engagement with the inner edge of the body member. A cap includes a cap base and a plunger extending from a central portion of a first side of the cap base. The plunger abuts the flexible tab members, maintaining the flexible tab members in engagement with the body member.

Abstract: To provide a plasma processing apparatus capable of enhancing insulation between an electrode and a casing and adjusting the temperature of the electrode from outside. An electrode 30 is provided at its discharge space forming surface with a solid dielectric 50. The electrode 30 is received in a casing 20 such that the solid dielectric 50 on the discharge space forming surface is exposed. An in-casing space 29 between the casing 20 and the electrode 30 disposed in the casing 20 is filled with substantially pure nitrogen gas. This nitrogen gas pressure is more increased than the pressure in the discharge space. Preferably, nitrogen gas is allowed to flow.

Abstract: To prevent occurrence of arcing caused by difference of thermal expansion between the electrode and the solid dielectric in a plasma processing apparatus. The bottom part of a casing 20 of processing units 10L, 10R is open, this opening part is closed with a solid dielectric plate 50, and an electrode 30 is received in the casing 20 such that the electrode 30 is free in the longitudinal direction. The solid dielectric plate 50 has such strength as capable of supporting the dead weight of the electrode 30 solely by itself. The electrode 30 is placed on the upper surface of the solid dielectric plate 50 is a non-fixed state such that the dead weight of the electrode 30 is almost totally applied to the solid dielectric plate 50.

Abstract: In an atmospheric-pressure plasma processing apparatus, a first metal surface 21a of a first stage portion 21 of a stage 20 is exposed and an object to be processed W composed of a dielectric material is placed on the first metal surface 21a. A second stage portion 22 is disposed on a peripheral edge of the first stage portion 21. A solid dielectric layer 25 is disposed on a second metal 24 of the second stage portion 22. A peripheral portion of the object W is placed on an inner dielectric portion 26 of the solid dielectric layer 25. An electrode 11 generates a run up discharge D2 in a second movement range R2 above the second stage portion 22. Then, the electrode 11 is moved to a first movement range R1 above the first stage portion 21 and generates a regular plasma discharge D1.

Abstract: To provide a plasma processing apparatus capable of enhancing insulation between an electrode and a casing and adjusting the temperature of the electrode from outside. An electrode 30 is provided at its discharge space forming surface with a solid dielectric 50. The electrode 30 is received in a casing 20 such that the solid dielectric 50 on the discharge space forming surface is exposed. An in-casing space 29 between the casing 20 and the electrode 30 disposed in the casing 20 is filled with substantially pure nitrogen gas. This nitrogen gas pressure is more increased than the pressure in the discharge space. Preferably, nitrogen gas is allowed to flow.

Abstract: To prevent occurrence of arcing caused by difference of thermal expansion between the electrode and the solid dielectric in a plasma processing apparatus. The bottom part of a casing 20 of processing units 10L, 10R is open, this opening part is closed with a solid dielectric plate 50, and an electrode 30 is received in the casing 20 such that the electrode 30 is free in the longitudinal direction. The solid dielectric plate 50 has such strength as capable of supporting the dead weight of the electrode 30 solely by itself. The electrode 30 is placed on the upper surface of the solid dielectric plate 50 is a non-fixed state such that the dead weight of the electrode 30 is almost totally applied to the solid dielectric plate 50.

Abstract: [PROBLEM TO BE SOLVED]In a surface processing apparatus for spraying a processing gas onto the surface of an object to be processed through a hole-row such as a slit, the surface of the object having a large area can effectively be processed even if the hole-row is short. [MEANS FOR SOLVING] A plurality of electrode plates 11, 12 are arranged, in side-by-side relation, on a processor 1 of a plasma surface processing apparatus M. A slit-like hole-row 10a is formed between the adjacent electrode plates, and a hole-row group 100 is constituted by the side-by-side arranged hole-rows 10a. The object W is moved along the extending direction of each slit 10a by a moving mechanism 4.

Abstract: An elongated material treatment apparatus includes, a coating device for coating a photoresist on a main region in a principal surface of an elongated material with a photoresist, and a conveying device for transporting the elongated material from a cleaning device to the coating device while supporting a transport support region in the principal surface cleaned by the cleaning device, there is a cleaning fluid removing device between the cleaning device and the coating device for removing a cleaning fluid deposited on the transport support region, whereby the elongated material is prevented from slipping during the transport of the elongated material by the conveying device and is correctly transported. The elongated material is transported to the coating device, with the cleaning fluid left in the main region, permitting uniform coating of the photoresist on the main region.