Patents by Inventor Toshimi Nagase

Toshimi Nagase has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11451211
    Abstract: A gallium nitride structure that includes: a substrate; a gallium nitride layer opposed to the substrate and containing gallium nitride as a main component thereof; and a first electrode between the gallium nitride layer and the substrate. The first electrode includes at least one hafnium layer containing a single metal of hafnium as a main component thereof, and the at least one hafnium layer is in contact with the gallium nitride layer.
    Type: Grant
    Filed: September 10, 2018
    Date of Patent: September 20, 2022
    Assignees: MURATA MANUFACTURING CO., LTD., NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Keiichi Umeda, Takaaki Mizuno, Yasuhiro Aida, Masato Uehara, Toshimi Nagase, Morito Akiyama
  • Patent number: 10608164
    Abstract: A piezoelectric thin film composed of aluminum nitride and which contains magnesium and 31 to 120 atomic percent of niobium relative to 100 atomic percent of the magnesium, and the total content of the magnesium and the niobium relative to the total sum of contents of the magnesium, the niobium and the aluminum nitride falls within the range of 10 to 67 atomic percent.
    Type: Grant
    Filed: May 9, 2016
    Date of Patent: March 31, 2020
    Assignees: MURATA MANUFACTURING CO., LTD., NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Keiichi Umeda, Atsushi Honda, Morito Akiyama, Keiko Nishikubo, Toshimi Nagase
  • Patent number: 10475984
    Abstract: A germanium-containing aluminum nitride piezoelectric film and a method for manufacturing an aluminum nitride piezoelectric film in which a germanium-containing aluminum nitride piezoelectric film is grown on a substrate by sputtering.
    Type: Grant
    Filed: August 30, 2016
    Date of Patent: November 12, 2019
    Assignees: MURATA MANUFACTURING CO., LTD., NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Keiichi Umeda, Morito Akiyama, Toshimi Nagase, Keiko Nishikubo, Atsushi Honda
  • Publication number: 20190007026
    Abstract: A gallium nitride structure that includes: a substrate; a gallium nitride layer opposed to the substrate and containing gallium nitride as a main component thereof; and a first electrode between the gallium nitride layer and the substrate. The first electrode includes at least one hafnium layer containing a single metal of hafnium as a main component thereof, and the at least one hafnium layer is in contact with the gallium nitride layer.
    Type: Application
    Filed: September 10, 2018
    Publication date: January 3, 2019
    Inventors: Keiichi Umeda, Takaaki Mizuno, Yasuhiro Aida, Masato Uehara, Toshimi Nagase, Morito Akiyama
  • Patent number: 9972769
    Abstract: A piezoelectric thin film comprising aluminum nitride containing magnesium and hafnium, wherein a content of the hafnium based on 100 atomic % of the magnesium is 8 atomic % or more and less than 100 atomic %, and a total content of the magnesium and hafnium based on a sum of a content of the magnesium, hafnium, and aluminum is in a range of 47 atomic % or less.
    Type: Grant
    Filed: June 8, 2015
    Date of Patent: May 15, 2018
    Assignees: MURATA MANUFACTURING CO., LTD., NATIONAL INSTlTUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Keiichi Umeda, Atsushi Honda, Morito Akiyama, Toshimi Nagase, Keiko Nishikubo, Masato Uehara
  • Publication number: 20160372653
    Abstract: A germanium-containing aluminum nitride piezoelectric film and a method for manufacturing an aluminum nitride piezoelectric film in which a germanium-containing aluminum nitride piezoelectric film is grown on a substrate by sputtering.
    Type: Application
    Filed: August 30, 2016
    Publication date: December 22, 2016
    Inventors: KEIICHI UMEDA, Morito Akiyama, Toshimi Nagase, Keiko Nishikubo, Atsushi Honda
  • Publication number: 20160254438
    Abstract: A piezoelectric thin film composed of aluminum nitride and which contains magnesium and 31 to 120 atomic percent of niobium relative to 100 atomic percent of the magnesium, and the total content of the magnesium and the niobium relative to the total sum of contents of the magnesium, the niobium and the aluminum nitride falls within the range of 10 to 67 atomic percent.
    Type: Application
    Filed: May 9, 2016
    Publication date: September 1, 2016
    Inventors: KEIICHI UMEDA, Atsushi Honda, Morito Akiyama, Keiko Nishikubo, Toshimi Nagase
  • Publication number: 20150357555
    Abstract: A piezoelectric thin film comprising aluminum nitride containing magnesium and hafnium, wherein a content of the hafnium based on 100 atomic % of the magnesium is 8 atomic % or more and less than 100 atomic %, and a total content of the magnesium and hafnium based on a sum of a content of the magnesium, hafnium, and aluminum is in a range of 47 atomic % or less.
    Type: Application
    Filed: June 8, 2015
    Publication date: December 10, 2015
    Inventors: Keiichi Umeda, Atsushi Honda, Morito Akiyama, Toshimi Nagase, Keiko Nishikubo, Masato Uehara
  • Patent number: 5140811
    Abstract: An exhaust gas purification device for purifying exhaust gas of an engine, having an absorbent trapper absorptive of hydrocarbons in the exhaust gas up to a first gas temperature such as 200.degree. C. while releasing the absorbed hydrocarbons in the exhaust gas above a second gas temperature such as 400.degree. C., and a passage system responsive to the gas temperature for conducting the exhaust gas from the engine to pass through the absorbent trapper until the gas temperature rises up to the first gas temperate, to bypass the absorbent trapper when the gas temperature exceeds the first gas temperature, and to pass through the absorbent trapper and the catalytic converter in this order when the gas temperature exceeds the second gas temperature.
    Type: Grant
    Filed: October 25, 1990
    Date of Patent: August 25, 1992
    Assignee: Toyota Jidosha Kabushiki Kaisha
    Inventors: Takashi Minami, Toshimi Nagase