Patents by Inventor Toshimi Ohki

Toshimi Ohki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making static induction transistor logic
    Patent number: 4216029
    Abstract: A method of fabricating a static induction transistor device comprising providing a semiconductor substrate having a high impurity concentration, and forming a low impurity concentration semiconductor layer of the same conductivity type as the substrate on a surface of the substrate. Next, a high impurity concentration semiconductor region of the same conductivity type as the substrate is formed in a surface of the semiconductor layer formed on the substrate to define a drain region of the device.
    Type: Grant
    Filed: March 21, 1978
    Date of Patent: August 5, 1980
    Assignee: Kabushiki Kaisha Daini Seikosha
    Inventor: Toshimi Ohki
  • Static induction transistor
    Patent number: 4216490
    Abstract: A static induction transistor having a channel region between a gate region and a source region of the transistor. Current flowing from the drain region to the source region through the channel region is controlled by a voltage applied to the gate region. An impurity region having a conductivity type opposite that of the channel region is formed in the channel region and is effective to decrease the channel current which will flow when the gate region is biased by a low voltage.
    Type: Grant
    Filed: March 28, 1978
    Date of Patent: August 5, 1980
    Assignee: Kabushiki Kaisha Daini Seikosha
    Inventor: Toshimi Ohki