Abstract: The semiconductor failure analysis device includes: a light source configured to generate irradiation light with which the semiconductor device is irradiated; a solid immersion lens disposed on an optical path of the irradiation light; a light detection unit configured to receive reflected light and to output a detection signal according to the reflected light; an optical system 6 disposed between the light source and the solid immersion lens to emit the irradiation light to the semiconductor device via the solid immersion lens and disposed between the solid immersion lens and the light detection unit to emit the reflected light received via the solid immersion lens to the light detection unit. The light source emits the irradiation light having a center wavelength of 880 nm or more and 980 nm or less. The solid immersion lens is formed of GaAs.

Abstract: A failure analysis unit is a wafer conveyance unit configured to convey a wafer while holding the wafer in a semiconductor failure analysis apparatus, the wafer conveyance unit including: a placement table configured to fix a wafer at a predetermined observation position; and a wafer chuck configured to convey the wafer while holding the wafer to the observation position. The wafer chuck includes a plurality of holding members (protruding portions) provided so as to face a side surface of the wafer, and holds the wafer by sandwiching a peripheral portion of the wafer W with the plurality of holding members.

Abstract: A solid immersion lens supporting device includes a lens holder 30 that holds a solid immersion lens 20 in a free state in which a lens bottom surface 22 protrudes downward through a lower opening 32 so as not to fix the solid immersion lens, and a lens cover 40 which is provided to an upper opening 31 of the lens holder 30, and in which a cover bottom surface 42 on the solid immersion lens 20 side is on a plane perpendicular to an optical axis, the lens cover coming into one-point contact with a spherical lens top surface 21 of the solid immersion lens 20. Further, the lens cover 40 is provided with a positioning portion which is capable of carrying out positioning of the solid immersion lens 20 with respect to the objective lens with reference to an image of the lens cover 40 observed via the objective lens. Thereby, the immersion lens supporting device which is capable of efficiently carrying out movement, installation, and positioning of the immersion lens onto a sample is realized.

Abstract: A solid immersion lens supporting device includes a lens holder 30 that holds a solid immersion lens 20 in a free state in which a lens bottom surface 22 protrudes downward through a lower opening 32 so as not to fix the solid immersion lens, and a lens cover 40 which is provided to an upper opening 31 of the lens holder 30, and in which a cover bottom surface 42 on the solid immersion lens 20 side is on a plane perpendicular to an optical axis, the lens cover coming into one-point contact with a spherical lens top surface 21 of the solid immersion lens 20. Further, the lens cover 40 is provided with a positioning portion which is capable of carrying out positioning of the solid immersion lens 20 with respect to the objective lens with reference to an image of the lens cover 40 observed via the objective lens. Thereby, the immersion lens supporting device which is capable of efficiently carrying out movement, installation, and positioning of the immersion lens onto a sample is realized.

Abstract: The present invention relates to a laser beam inspection apparatus for inspecting a defect on a sample such as semiconductor integrated circuits by using a laser beam. The laser beam inspection apparatus irradiates a laser beam to a sample supplied with a constant current or applied by a constant voltage, and then detects indirectly a change in current or a change in electric field corresponding to a change in the value of resistance developed by scanning the laser beam along the surface of the sample. For example, the change in current is conducted indirectly in such a manner that a magnetic field detecting apparatus detects the change in the magnetic field caused by a current flowing the power supply line provided between a constant voltage source and a sample, and whereby it becomes possible to specify the defective area of the sample based on the detection of the change in the magnetic field.

Abstract: The present invention relates to a laser beam inspection apparatus for inspecting a defect on a sample such as semiconductor integrated circuits by using a laser beam. The laser beam inspection apparatus irradiates a laser beam to a sample supplied with a constant current or applied by a constant voltage, and then detects indirectly a change in current or a change in electric field corresponding to a change in the value of resistance developed by scanning the laser beam along the surface of the sample. For example, the change in current is conducted indirectly in such a manner that a magnetic field detecting apparatus detects the change in the magnetic field caused by a current flowing the power supply line provided between a constant voltage source and a sample, and whereby it becomes possible to specify the defective area of the sample based on the detection of the change in the magnetic field.