Abstract: A drive device protection structure has a rotary electric machine, a gearbox connected the rotary electric machine, an undercover disposed underneath the drive device and a protecting plate provided to the undercover. The rotary electric machine has a rotary electric machine housing that has a rotary electric machine flange. The gearbox has a gearbox housing that has a gearbox flange. The rotary electric machine flange and the gearbox flange are connected together. The rotary electric machine flange and the gearbox flange are formed such that a lower surface of the gearbox flange is positioned lower than a lower surface of the rotary electric machine flange. The protecting plate is formed of a material more rigid than a material of the undercover. The protecting plate is provided beneath connecting part between the rotary electric machine flange and the gearbox flange so as to face the connecting part.

Abstract: An organometallic compound feeder comprising a packing container into which an organometallic compound that is in a solid state at an ordinary temperature is to be packed and a carrier gas is to be fed to sublimate the organometallic compound further comprises: a support plate which is to hold the organometallic compound carried on an inert carrier in the packing container and which is to allow the carrier gas to pass therethrough, a carrier gas inlet in an upper portion of the packing container, a carrier gas outlet which is opened below the support plate in a bottom portion of the packing container, and a baffle plate which is attached between the support plate and the carrier gas outlet and is larger than an opening diameter of the carrier gas outlet, and the feeder is configured so as to allow carrier gas to pass downward through the organometallic compound carried on the inert carrier packed on the support plate.

Abstract: An apparatus of supplying an organometallic compound comprising a vessel into which a solid organometallic compound at room temperature is placed and a carrier gas to sublimate the organometallic compound is supported, a supporter plate capable of maintaining an organometallic compound supported on an inert support in the lower part of the vessel with passing a carrier gas therethrough, a carrier gas inlet in the upper part of the vessel, and a carrier gas outlet downward of the supporter plate of being the bottom part of the vessel are disposed, and wherein the carrier gas is passed through the organometallic compound supported on the inert support loaded on the supporter plate from the above downward, is provided.

Abstract: An InGaP buffer layer (3) is formed on a semi-insulating GaAs substrate (1) to a thickness of not less than 5 nm and not greater than 500 nm and an InAlAs layer (4) and an InGaAs channel layer (5) are grown thereon to form a heterostructure. An In segregation effect occurs at the time of forming the InGaP buffer layer (3), so that the region of the InGaP buffer layer (3) near the layer above becomes excessive in In. As a result, the composition of the surface of the InGaP buffer layer (3) becomes very close to the composition of InP, thereby suppressing occurrence of misfit dislocations that can result in degradation of the surface condition. Further, the surface condition of the InAlAs layer (4) and InGaAs channel layer (5) formed thereon can be made good.

Abstract: Provided is a manufacturing method of a compound semiconductor having at least one layer of carbon-doped p-type semiconductor epitaxial layer by a MOVPE process, wherein carbon trichloride bromide is used as a carbon source of carbon to be added to the p-type semiconductor epitaxial layer. In the method the etching amount during growth is relatively small, and carbon can be added to a high concentration even with a large MOVPE apparatus.