Patents by Inventor Toshimitsu Akane

Toshimitsu Akane has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for formation of cap layer for semiconductor
    Patent number: 6432848
    Abstract: A process for the formation of a cap layer for semiconductors with a low degree of contamination wherein the cap layer is easily formed on the surface of a semiconductor, and binding force thereof with the surface of the semiconductor is strong and stabilized, besides only the cap layer is selectively removed easily, comprises the steps of introducing nitrogen atom into a surface of a semiconductor; combining a component element of the semiconductor in the vicinity of the surface of the semiconductor into which the nitrogen atom has been introduced with the nitrogen atom to form a nitride compound being a compound of the component element of the semiconductor and the nitrogen atom; and utilizing the nitride compound as a cap layer for the surface of the semiconductor.
    Type: Grant
    Filed: January 26, 2001
    Date of Patent: August 13, 2002
    Assignee: Riken
    Inventors: Toshimitsu Akane, Koji Sugioka, Katsumi Midorikawa, Jan J. Dubowski
  • Process for formation of cap layer for semiconductor
    Publication number: 20010021539
    Abstract: A process for the formation of a cap layer for semiconductors with a low degree of contamination wherein the cap layer is easily formed on the surface of a semiconductor, and binding force thereof with the surface of the semiconductor is strong and stabilized, besides only the cap layer is selectively removed easily, comprises the steps of introducing nitrogen atom into a surface of a semiconductor; combining a component element of the semiconductor in the vicinity of the surface of the semiconductor into which the nitrogen atom has been introduced with the nitrogen atom to form a nitride compound being a compound of the component element of the semiconductor and the nitrogen atom; and utilizing the nitride compound as a cap layer for the surface of the semiconductor.
    Type: Application
    Filed: January 26, 2001
    Publication date: September 13, 2001
    Inventors: Toshimitsu Akane, Koji Sugioka, Katsumi Midorikawa, Jan J. Dubowski