Abstract: According to one embodiment, a semiconductor memory device includes: a plurality of first conductive layers aligned in a first direction with a space in between; a first plug penetrating the first conductive layers; a second conductive layer below the first conductive layers, the second conductive layer being coupled to a lower end of the first plug; a first transistor below the first conductive layers; a second transistor in a second region between the first transistor and a first region below the second conductive layer, the second transistor having a gate electrically coupled to the first transistor and a drain electrically coupled to the first transistor; and a third transistor in the second region, the third transistor having a source and a drain electrically coupled to each other.

Abstract: A heating apparatus comprises a heating element, an inner shell for supporting the heating element, an outer shell disposed along the outer boundary of the inner shell, a cooling medium passage for conveying a cooling medium between the inner shell and the outer shell, a first opening provided in the inner shell, a second opening provided in the outer shell, and a partition arranged to extend from the first opening to the second opening for developing at least a space separated from the cooling medium passage and between the inner shell and the outer shell. The heating apparatus further comprises an insulator for shutting up a gap provided between the partition and the second opening.

Abstract: The sizes required for maintenance are reduced and an occupying floor area is reduced. The substrate processing apparatus contains a load lock chamber 41 and a transfer chamber 24 respectively provided in order from the rear side within a case 11; and a processing chamber 53 provided above the load lock chamber 41 for processing wafers 1. An opening section 27A, and an opening and closing means 28A for opening and closing the opening section 27A are respectively provided in a location at the rear side of the transfer chamber 24 where the load lock chamber 41 is not arranged.

Abstract: A tubular electrode (215) and a tubular magnet (216) are installed on an external section of a processing furnace (202) for an MMT device. A susceptor (217) for holding a wafer (200) is installed inside a processing chamber (201) of the processing furnace. A gate valve (244) for conveying the wafer into and out of the processing chamber; and a shower head (236) for spraying processing gas in a shower onto the wafer, are installed inside the processing furnace. A high frequency electrode (2) and a heater (3) are installed inside the susceptor (217) with a clearance between them and the walls forming the space. The clearances formed between the walls forming the space in the susceptor and the high frequency electrode and the heater prevent damage to the high frequency electrode and the heater even if a thermal expansion differential occurs between the high frequency electrode, the heater and the susceptor.

Abstract: Wafer contamination is prevented, while preventing damage to a high-frequency electrode and a susceptor. A main body 41 of the susceptor 40 of an MMT apparatus is composed of a heater arranging plate 42, an electrode arranging plate 48, and a supporting plate 56 all made from quartz. A circular electrode arranging hole 49 with a fixed depth is concentrically formed on the upper surface of the electrode arranging plate 48, and quadrangular pillars 50 are formed protruding in a matrix on the bottom of the electrode arranging hole 49. Multiple insertion holes 52 are formed in a disk-shaped high-frequency electrode 51, and the high-frequency electrode 51 is installed in the electrode arranging hole 49 by inserting each pillar 50 into each insertion hole 52. The gaps Sa and Sb are provided between the high-frequency electrode 51 and the electrode arranging plate 48. The pillar 50 boosts the strength of the electrode arranging plate 48.

Abstract: A heating apparatus comprises a wall for surrounding and defining a heating space, a heating element mounted on the inner side of the wall, reflecting members for reflecting the heat emitted from the heating element. Also, a moving unit joined to one end of each of the reflecting members for moving the reflecting members. Moreover, pivotal members joined to the reflecting members beside more their respective other side than one side of the reflecting members for controlling as pivots the movement of the reflecting member driven by the moving unit.

Abstract: A substrate treating device comprising a treatment chamber for storing and treating substrates and a heating device having a heating element and a heat insulator and heating the substrates in the treatment chamber by the heating element. The heating element is so formed that only its one end is held by a holding part, and a projection projected to the treatment chamber side at the intermediate part of the heating element and positioned in proximity to or in contact with the heating element is formed on the heat insulator. A pin with an enlarged part is passed through the heating element and the heat insulator at the intermediate part of the heating element and the enlarged part is positioned in proximity to or in contact with the heating element. The plurality of projections may be formed on the heat insulator and the pins may be disposed between these plurality of projections.

Abstract: A tubular electrode (215) and a tubular magnet (216) are installed on an external section of a processing furnace (202) for an MMT device. A susceptor (217) for holding a wafer (200) is installed inside a processing chamber (201) of the processing furnace. A gate valve (244) for conveying the wafer into and out of the processing chamber; and a shower head (236) for spraying processing gas in a shower onto the wafer, are installed inside the processing furnace. A high frequency electrode (2) and a heater (3) are installed inside the susceptor (217) with a clearance between them and the walls forming the space. The clearances formed between the walls forming the space in the susceptor and the high frequency electrode and the heater prevent damage to the high frequency electrode and the heater even if a thermal expansion differential occurs between the high frequency electrode, the heater and the susceptor.

Abstract: A tubular electrode (215) and a tubular magnet (216) are installed on an external section of a processing furnace (202) for an MMT device. A susceptor (217) for holding a wafer (200) is installed inside a processing chamber (201) of the processing furnace. A gate valve (244) for conveying the wafer into and out of the processing chamber; and a shower head (236) for spraying processing gas in a shower onto the wafer, are installed inside the processing furnace. A high frequency electrode (2) and a heater (3) are installed inside the susceptor (217) with a clearance between them and the walls forming the space. The clearances formed between the walls forming the space in the susceptor and the high frequency electrode and the heater prevent damage to the high frequency electrode and the heater even if a thermal expansion differential occurs between the high frequency electrode, the heater and the susceptor.

Abstract: A substrate treating device comprising a treatment chamber for storing and treating substrates and a heating device having a heating element and a heat insulator and heating the substrates in the treatment chamber by the heating element. The heating element is so formed that only its one end is held by a holding part, and a projection projected to the treatment chamber side at the intermediate part of the heating element and positioned in proximity to or in contact with the heating element is formed on the heat insulator. A pin with an enlarged part is passed through the heating element and the heat insulator at the intermediate part of the heating element and The enlarged part is positioned in proximity to or in contact with the heating element. The plurality of projections may be formed on the heat insulator and the pins may be disposed between these plurality of projections.

Abstract: A heating apparatus comprises a heating element, an inner shell for supporting the heating element, an outer shell disposed along the outer boundary of the inner shell, a cooling medium passage for conveying a cooling medium between the inner shell and the outer shell, a first opening provided in the inner shell, a second opening provided in the outer shell, and a partition arranged to extend from the first opening to the second opening for developing at least a space separated from the cooling medium passage and between the inner shell and the outer shell. The heating apparatus further comprises an insulator for shutting up a gap provided between the partition and the second opening.

Abstract: A heating apparatus comprises a wall for surrounding and defining a heating space, a heating element mounted on the inner side of the wall, reflecting members for reflecting the heat emitted from the heating element. Also, a moving unit joined to one end of each of the reflecting members for moving the reflecting members. Moreover, pivotal members joined to the reflecting members beside more their respective other side than one side of the reflecting members for controlling as pivots the movement of the reflecting member driven by the moving unit.

Abstract: The sizes required for maintenance are reduced and an occupying floor area is reduced. The substrate processing apparatus contains a load lock chamber 41 and a transfer chamber 24 respectively provided in order from the rear side within a case 11; and a processing chamber 53 provided above the load lock chamber 41 for processing wafers 1. An opening section 27A, and an opening and closing means 28A for opening and closing the opening section 27A are respectively provided in a location at the rear side of the transfer chamber 24 where the load lock chamber 41 is not arranged.

Abstract: A tubular electrode (215) and a tubular magnet (216) are installed on an external section of a processing furnace (202) for an MMT device. A susceptor (217) for holding a wafer (200) is installed inside a processing chamber (201) of the processing furnace. A gate valve (244) for conveying the wafer into and out of the processing chamber; and a shower head (236) for spraying processing gas in a shower onto the wafer, are installed inside the processing furnace. A high frequency electrode (2) and a heater (3) are installed inside the susceptor (217) with a clearance between them and the walls forming the space. The clearances formed between the walls forming the space in the susceptor and the high frequency electrode and the heater prevent damage to the high frequency electrode and the heater even if a thermal expansion differential occurs between the high frequency electrode, the heater and the susceptor.

Abstract: Wafer contamination is prevented, while preventing damage to a high-frequency electrode and a susceptor. A main body 41 of the susceptor 40 of an MMT apparatus is composed of a heater arranging plate 42, an electrode arranging plate 48, and a supporting plate 56 all made from quartz. A circular electrode arranging hole 49 with a fixed depth is concentrically formed on the upper surface of the electrode arranging plate 48, and quadrangular pillars 50 are formed protruding in a matrix on the bottom of the electrode arranging hole 49. Multiple insertion holes 52 are formed in a disk-shaped high-frequency electrode 51, and the high-frequency electrode 51 is installed in the electrode arranging hole 49 by inserting each pillar 50 into each insertion hole 52. The gaps Sa and Sb are provided between the high-frequency electrode 51 and the electrode arranging plate 48. The pillar 50 boosts the strength of the electrode arranging plate 48.

Abstract: A tubular electrode (215) and a tubular magnet (216) are installed on an external section of a processing furnace (202) for an MMT device. A susceptor (217) for holding a wafer (200) is installed inside a processing chamber (201) of the processing furnace. A gate valve (244) for conveying the wafer into and out of the processing chamber; and a shower head (236) for spraying processing gas in a shower onto the wafer, are installed inside the processing furnace. A high frequency electrode (2) and a heater (3) are installed inside the susceptor (217) with a clearance between them and the walls forming the space. The clearances formed between the walls forming the space in the susceptor and the high frequency electrode and the heater prevent damage to the high frequency electrode and the heater even if a thermal expansion differential occurs between the high frequency electrode, the heater and the susceptor.

Abstract: A semiconductor device fabricating apparatus includes a thermocouple and a temperature measuring member. The temperature measuring member has thermal characteristics identical or substantially identical to those of a target substrate, a maximum outer diameter smaller than that thereof, and a thickness identical or substantially identical to that thereof. The thermocouple has a thermal junction point connected to the temperature measuring member.

Abstract: In a semiconductor device manufacturing method for processing a plurality of substrates by alternately repeating a pretreatment stage and a continuous substrate processing stage, the continuous substrate processing stage comprises the steps of: loading a substrate on a heater unit located at a substrate loading/unloading position, the heater unit supporting and heating the substrate; processing the loaded substrate after transferring the heater unit having thereon the loaded substrate to a substrate processing position; unloading the processed substrate; and repeating the loading step, the processing step and the unloading step until a set of substrates are processed, and wherein the pretreatment stage is carried out by maintaining the heater unit between the substrate loading/unloading position and the substrate processing position.

Abstract: A substrate processing apparatus includes a substrate holder for holding a plurality of wafers and being loaded therewith into a process tube through an opening in the process tube, in which a plurality of the wafers are processed, a wafer transfer system for charging a plurality of the wafers to the substrate holder, a boat waiting chamber installed on a line passing through the opening in the process tube and substantially hermetically accommodating the substrate holder before and after the substrate holder is loaded into and unloaded from the process tube and a wafer transfer chamber for substantially hermetically accommodating the wafer transfer system. An oxygen concentration of the boat waiting chamber is different from that of the wafer transfer chamber.

Abstract: In a substrate processing apparatus including a processing chamber for forming a processing room, a susceptor for supporting a substrate to be processed and a susceptor rotating unit for rotating the susceptor, the susceptor rotating unit includes a permanent magnet coupled with the susceptor and an electromagnet coupled with the processing chamber, wherein there is a spacing between the permanent magnet and the electromagnet. In the substrate processing apparatus, the inner part of the processing chamber is isolated from the atmosphere of the susceptor by the spacing between the permanent magnet and the electromagnet; and the susceptor is directly rotated by rotating the permanent magnet under a magnetic field formed by the electromagnet.