Abstract: Provided is a coating film forming apparatus capable of shortening an operating time without considerably altering the design of the apparatus and changing the physical properties of a material such as a resist solvent. A spin coater for spreading a coating solution 5 dropped onto a substrate 1 to be coated over the substrate 1 to be coated by the centrifugal pump action performed with the rotation of the substrate 1 to be coated and for evaporating a solvent in the coating solution 5 to form a coating film on the substrate 1 to be coated, a tank 14 for storing the coating solution, and a housing case 15 for accommodating the substrate to be coated are provided in a casing P, and the casing P is provided in a cleaning room. A temperature in the casing P is set higher than a temperature in the clean room on the outside of the casing P by using temperature control devices 30, 31, 32 and 33. Consequently, an operating time can be shortened.

Abstract: There is provided a semiconductor device manufacturing method that comprises a first step of loading a processed substrate in a reaction chamber, a second step of introducing a reaction gas into the reaction chamber at a predetermined flow rate, a third step of maintaining an interior of the reaction chamber at a predetermined pressure, a fourth step of starting generation of plasma by supplying a high frequency power to an electrode arranged in the reaction chamber, a fifth step of applying a predetermined process to the processed substrate, and a sixth step of stopping generation of the plasma by stopping supply of the high frequency power after the predetermined process is completed, wherein the reaction gas is introduced continuously when the generation of the plasma is stopped.

Abstract: A semiconductor device manufacturing method comprises the steps of placing a substrate to be processed on an electrostatic chuck on a substrate stand in a process chamber, and applying a negative voltage to the electrostatic chuck. After applying the negative voltage, the substrate is stuck onto the electrostatic chuck, a process gas is introduced into the process chamber, discharge plasma is generated, and the substrate is processed as predetermined.