Abstract: An infrared detection element includes a substrate, a lower electrode layer, a pyroelectric layer, and an upper electrode layer. The lower electrode layer is fixed to the substrate, and the pyroelectric layer is formed on the lower electrode layer. The upper electrode layer is formed on pyroelectric layer. The lower electrode layer contains pores therein and has a larger thermal expansion coefficient than the pyroelectric layer.

Abstract: An infrared ray detecting element includes: a substrate having a cavity; an infrared ray detecting portion including, sequentially stacked, a lower electrode layer, a detection layer, and an upper electrode layer; first and second support portions which support the infrared ray detecting portion above the cavity; and first and second external lead portions for leading electrical signals outputted from the infrared ray detecting portion, to the outside. The first support portion includes, sequentially stacked, a first upper wiring pattern, a first insulating layer, and a first lower wiring pattern. The upper electrode layer is connected to the first external lead portion via the first upper wiring pattern. The second support portion includes, sequentially stacked, a second upper wiring pattern, a second insulating layer, and a second lower wiring pattern. The lower electrode layer is connected to the second external lead portion via the second lower wiring pattern.

Abstract: An infrared ray detecting element includes: a substrate having a cavity; an infrared ray detecting portion including, sequentially stacked, a lower electrode layer, a detection layer, and an upper electrode layer; first and second support portions which support the infrared ray detecting portion above the cavity; and first and second external lead portions for leading electrical signals outputted from the infrared ray detecting portion, to the outside. The first support portion includes, sequentially stacked, a first upper wiring pattern, a first insulating layer, and a first lower wiring pattern. The upper electrode layer is connected to the first external lead portion via the first upper wiring pattern. The second support portion includes, sequentially stacked, a second upper wiring pattern, a second insulating layer, and a second lower wiring pattern. The lower electrode layer is connected to the second external lead portion via the second lower wiring pattern.

Abstract: An infrared detecting element includes a detection laminate body including a lower electrode layer, a detection layer provided on the lower electrode layer, and, an upper electrode layer provided on the detection layer. The detection layer has a columnar crystal structure. The detection layer has plural pores therein unevenly distributed mainly on a crystal grain boundary of the crystal structure. This infrared detecting element has high infrared detection performance.

Abstract: A piezoelectric element includes, in sequence, a substrate containing metallic material; a first intermediate layer; a lower electrode layer; a piezoelectric layer; and an upper electrode layer. The first intermediate layer contains, as a main component, a nitrogen-containing silicon oxide having a silicon-nitrogen bond. The lower electrode layer contains a perovskite-type oxide in (100) preferential orientation. The piezoelectric layer contains a perovskite-type oxide in (001) or (100) preferential orientation.

Abstract: A dielectric element includes a substrate, a first electrode layer on this substrate, a dielectric layer on the first electrode layer, and a second electrode layer on the dielectric layer. The first electrode layer contains lanthanum nickelate. The dielectric layer contains lead magnesate niobate-titanate represented by (1?x)Pb(Mg1/3Nb2/3)O3-xPbTiO3, where x satisfies 0.28?x?0.33. The (100) plane of lead magnesate niobate-titanate is preferentially oriented along the interface between the first electrode layer and the dielectric layer.

Abstract: An infrared detecting device includes a substrate and a thermal photo detecting element. The substrate includes a concave portion, and a frame portion positioned on the periphery of the concave portion. The thermal photo detecting element includes leg portions and a detecting portion. The leg portions are connected on the frame portion so that the detecting portion is positioned above the concave portion. The thermal photo detecting element includes a first electrode layer disposed on the substrate, a detecting layer disposed on the first electrode layer, and a second electrode layer disposed on the detecting layer. The linear thermal expansion coefficient of the first electrode layer is larger than the linear thermal expansion coefficient of the substrate. The linear thermal expansion coefficient of the substrate is larger than the linear thermal expansion coefficient of the detecting layer.

Abstract: An infrared detection device includes a substrate and a heat-type light sensing element. The substrate has a recess, and a frame positioned around the recess. The heat-type light sensing element has a leg and a sensing unit, and the leg is connected onto the frame so that the sensing unit is positioned over the recess. The heat-type light sensing element includes an intermediate layer provided on the substrate, a first electrode layer provided on the intermediate layer, a sensing layer provided on the first electrode layer, and a second electrode layer provided on the sensing layer. The substrate has a linear thermal expansion coefficient larger than that of the sensing layer. The intermediate layer has a linear thermal expansion coefficient decreasing toward the first electrode layer from the substrate.

Abstract: A piezoelectric element includes a substrate, and a lower electrode layer, a piezoelectric layer, and an upper electrode layer sequentially formed on the substrate. The substrate has a linear thermal expansion coefficient higher than that of the piezoelectric layer, and the piezoelectric layer includes a polycrystalline body having an in-plane stress in a compressive direction. Thus, the piezoelectric element realizes the piezoelectric layer having a high orientation in a polarization axis direction, high proportionality of a displacement amount with respect to an applied voltage, and a large absolute value of the displacement amount.

Abstract: An infrared sensor element according to the present invention includes a substrate, and a lower electrode layer, a pyroelectric layer, and an upper electrode layer sequentially formed on the substrate. The substrate has a linear thermal expansion coefficient higher than that of the pyroelectric layer, and the pyroelectric layer includes a polycrystalline body having an in-plane stress in a compressive direction. Thus, the infrared sensor element realizes the pyroelectric layer having a high orientation in a polarization axis direction, an excellent pyroelectric property.

Abstract: An infrared detection element includes a substrate, a lower electrode layer, a pyroelectric layer, and an upper electrode layer. The lower electrode layer is fixed to the substrate, and the pyroelectric layer is formed on the lower electrode layer. The upper electrode layer is formed on pyroelectric layer. The lower electrode layer contains pores therein and has a larger thermal expansion coefficient than the pyroelectric layer.

Abstract: An infrared sensor element according to the present invention includes a substrate, and a lower electrode layer, a pyroelectric layer, and an upper electrode layer sequentially formed on the substrate. The substrate has a linear thermal expansion coefficient higher than that of the pyroelectric layer, and the pyroelectric layer includes a polycrystalline body having an in-plane stress in a compressive direction. Thus, the infrared sensor element realizes the pyroelectric layer having a high orientation in a polarization axis direction, an excellent pyroelectric property.

Abstract: A piezoelectric element includes a substrate, a lower electrode layer, a piezoelectric layer, and an upper electrode layer. The lower electrode layer is fixed to the substrate and the piezoelectric layer is formed on the lower electrode layer. The upper electrode layer is formed on piezoelectric layer. The lower electrode layer contains pores therein and has a larger thermal expansion coefficient than the piezoelectric layer.

Abstract: A piezoelectric element includes, in sequence, a substrate containing metallic material; a first intermediate layer; a lower electrode layer; a piezoelectric layer; and an upper electrode layer. The first intermediate layer contains, as a main component, a nitrogen-containing silicon oxide having a silicon-nitrogen bond. The lower electrode layer contains a perovskite-type oxide in (100) preferential orientation. The piezoelectric layer contains a perovskite-type oxide in (001) or (100) preferential orientation.

Abstract: A piezoelectric element includes a substrate, a lower electrode layer, a piezoelectric layer, and an upper electrode layer. The lower electrode layer is fixed to the substrate and the piezoelectric layer is formed on the lower electrode layer. The upper electrode layer is formed on piezoelectric layer. The lower electrode layer contains pores therein and has a larger thermal expansion coefficient than the piezoelectric layer.

Abstract: A dielectric element substrate includes a board, a diffusion layer, a first isolation layer, and a lower electrode layer. The diffusion layer is provided on the board. The first isolation layer is provided on and unitarily with the diffusion layer. The lower electrode layer is provided on the first isolation layer at an opposite side with respect to the diffusion layer of, and is isolated from the diffusion layer by the first isolation layer. The diffusion layer is formed by allowing a first metal element and a second metal element to diffuse from the board to the same composition material as that of the first isolation layer. The first isolation layer is free from the first and second metal elements. A coefficient of thermal expansion of the diffusion layer decreases monotonously from the board to the first isolation layer.

Abstract: A piezoelectric element includes a substrate, and a lower electrode layer, a piezoelectric layer, and an upper electrode layer sequentially formed on the substrate. The substrate has a linear thermal expansion coefficient higher than that of the piezoelectric layer, and the piezoelectric layer includes a polycrystalline body having an in-plane stress in a compressive direction. Thus, the piezoelectric element realizes the piezoelectric layer having a high orientation in a polarization axis direction, high proportionality of a displacement amount with respect to an applied voltage, and a large absolute value of the displacement amount.

Abstract: A piezoelectric element includes a substrate, and a lower electrode layer, a piezoelectric layer, and an upper electrode layer sequentially formed on the substrate. The substrate has a linear thermal expansion coefficient higher than that of the piezoelectric layer, and the piezoelectric layer includes a polycrystalline body having an in-plane stress in a compressive direction. Thus, the piezoelectric element realizes the piezoelectric layer having a high orientation in a polarization axis direction, high proportionality of a displacement amount with respect to an applied voltage, and a large absolute value of the displacement amount.

Abstract: A piezoelectric element includes a substrate, and a lower electrode layer, a piezoelectric layer, and an upper electrode layer sequentially formed on the substrate. The substrate has a linear thermal expansion coefficient higher than that of the piezoelectric layer, and the piezoelectric layer includes a polycrystalline body having an in-plane stress in a compressive direction. Thus, the piezoelectric element realizes the piezoelectric layer having a high orientation in a polarization axis direction, high proportionality of a displacement amount with respect to an applied voltage, and a large absolute value of the displacement amount.

Abstract: A lens unit includes a lens barrel (7) with a through hole (6), a first lens (8a) press-fitted into the through-hole (6), a first step (9a) catching an outer edge of the first lens (8a) in the through-hole (6), a second lens (8b) press-fitted into the through-hole (6) in a direction of an optical axis of the first lens (8a), and a second step (9b) catching an outer edge of the second lens (8b) in the through-hole (6). The second lens (8b) has a diameter larger than that of the first lens (8a). A third step (10a) or a sloped portion broadening the through hole from the first lens to the second lens is further provided.