Patents by Inventor Toshinari Utsumi

Toshinari Utsumi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method of manufacturing the same
    Patent number: 5915179
    Abstract: In the present invention, a vertical type MOSFET and a Schottky barrier diode which are used as a switching device of a DC--DC converter are formed on the same semiconductor substrate. Further, a barrier metal which is required for the Schottky barrier diode is also formed on an electrode portion of the vertical type MOSFET. In addition, a Schottky barrier diode forming region is formed to have low impurity concentration than a vertical type MOSFET forming region.
    Type: Grant
    Filed: June 7, 1996
    Date of Patent: June 22, 1999
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Hiroki Etou, Kazunori Ohno, Takaaki Saito, Naofumi Tsuchiya, Toshinari Utsumi