Patents by Inventor Toshinobu Matsutani

Toshinobu Matsutani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6262358
    Abstract: A solar cell module includes a substrate, a plurality of solar cells arranged in a plane on the substrate, a connection member for electrically connecting the plurality of solar cells to each other to form a power generating circuit, and a single transparent cover sheet for covering the plurality of solar cells and the connection member.
    Type: Grant
    Filed: February 14, 2000
    Date of Patent: July 17, 2001
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Kunio Kamimura, Keiji Shimada, Toshinobu Matsutani, Tatsuo Saga
  • Patent number: 5330584
    Abstract: A solar cell includes a first semiconductor region of a P type, a second semiconductor region of an N type in contact with the first semiconductor region so as to form a PN junction therebetween, and a third semiconductor region of a P.sup.+ type in contact with both the first and second semiconductor regions and having a higher impurity concentration than that of the first semiconductor region.
    Type: Grant
    Filed: October 13, 1992
    Date of Patent: July 19, 1994
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Tatsuo Saga, Tadashi Hisamatsu, Toshinobu Matsutani
  • Patent number: 4029518
    Abstract: A P-type diffusion layer is formed on an N-type silicon semiconductor wafer to establish a P-N junction in a solar cell, the diffusion layer being exposed to radiation. A pair of electrodes are formed on the surfaces of the diffusion layer and the semiconductor wafer in a desired configuration in order to provide output of electric energy generated by the solar cell. The diffusion layer is formed in such a manner that the layer has a thickness of around 3 .mu.m at areas where the electrode is formed and has a thickness of around or below 0.5 .mu.m at regions on which the electrode is not formed. With such an arrangement, radiation having a wavelength of about or shorter than 400 m.mu.m can be used for performing optoelectric generation.
    Type: Grant
    Filed: November 20, 1975
    Date of Patent: June 14, 1977
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Toshinobu Matsutani, Keiichi Nishida