Patents by Inventor Toshinobu Sekiba

Toshinobu Sekiba has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5068706
    Abstract: A semiconductor device includes a radiation plate, first and second conductive patterns formed on one surface of the radiation plate, a first semiconductor element fixed on and connected to the first conductive pattern, a second semiconductor element fixed on and connected to the second conductive pattern, a conductive member for connecting the first and second semiconductor elements to each other, a first external terminal electrically connected to the first conductive pattern, a second external terminal electrically connected to the second conductive pattern, a third external terminal electrically connected to the conductive member, and an outer casing, which is filled with epoxy resin, for enclosing the semiconductor elements and the first to third external terminals. Part of each of the first to third external terminals is exposed to an exterior of the casing. At least one of the conductive member, first external terminal, second external terminal, and third external terminal includes a hollow fuse.
    Type: Grant
    Filed: February 12, 1990
    Date of Patent: November 26, 1991
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Naomasa Sugita, Yoshiharu Yotumoto, Kouji Moriguchi, Toshinobu Sekiba
  • Patent number: 4943842
    Abstract: A semiconductor device includes a radiation plate, first and second conductive patterns formed on one surface of the radiation plate, a first semiconductor element fixed on and connected to the first conductive pattern, a second semiconductor element fixed on and connected to the second conductive pattern, a conductive member for connecting the first and second semiconductor elements to each other, a first external terminal electrically connected to the first conductive pattern, a second external terminal electrically connected to the second conductive pattern, a third external terminal electrically connected to the conductive member, and an outer casing, which is filled wiht epoxy resin, for enclosing the semiconductor elements and the first to third external terminals. Part of each of the first to third external terminals is exposed to an exterior of the casing. At least one of the conductive member, first external terminal, second external terminal, and third external terminal includes a hollow fuse.
    Type: Grant
    Filed: March 9, 1988
    Date of Patent: July 24, 1990
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Naomasa Sugita, Yoshiharu Yotumoto, Kouji Moriguchi, Toshinobu Sekiba
  • Patent number: 4604643
    Abstract: A semiconductor rectifier device includes a heat-radiating substrate, a flame-sprayed insulating layer formed directly on a surface of the substrate, at least one first flame-sprayed metal layer selectively formed on the surface of the radiation substrate, and a second metal layer selectively formed on the flame-sprayed insulating layer. A rectifying circuit has first and second rectifying elements which are electrically coupled, respectively, at terminals of opposite polarities, with the first flame-sprayed metal layer and the second flame-sprayed metal layer. An electrode electrically connects the terminals of the rectifying elements having polarities opposite to those of the terminals connected to the first and second flame-sprayed layers.
    Type: Grant
    Filed: October 30, 1984
    Date of Patent: August 5, 1986
    Assignee: Tokyo Shibaura Denki Kabushiki Kaisha
    Inventors: Yoshiharu Yotsumoto, Katsuhiko Kubota, Toshinobu Sekiba
  • Patent number: 4542401
    Abstract: A semiconductor device has a sprayed metal layer formed by a method such as plasma spraying on a metal substrate of a material such as aluminum, and a semiconductor element attached to the sprayed metal layer by soldering. A sprayed insulting layer may be interposed between the sprayed metal layer and the metal substrate for electrically insulating the element from the substrate.
    Type: Grant
    Filed: December 22, 1983
    Date of Patent: September 17, 1985
    Assignee: Tokyo Shibaura Denki Kabushiki Kaisha
    Inventor: Toshinobu Sekiba
  • Patent number: 4143395
    Abstract: A semiconductor device includes a semiconductor element having at least three semiconductor areas corresponding to first, second and third semiconductor areas, a first electrode connecting means comprising a cylindrical stud electrically connected to the first semiconductor area of the semiconductor element, and second and third electrode connecting means connected to the closed end of a housing in a position deviated from the axis of the cylindrical stud. The second electrode connecting means has a cylindrical section situated concentric with the cylindrical stud and including a free end, and includes a through hole extending from a side surface thereof toward the free end while passing through the center of the cylindrical section. The third electrode connecting means comprising a flexible lead and it is received in the through hole of the second electrode connecting means.
    Type: Grant
    Filed: May 22, 1978
    Date of Patent: March 6, 1979
    Assignee: Tokyo Shibaura Electric Co., Ltd.
    Inventor: Toshinobu Sekiba