Abstract: An organic light-emitting device having a perovskite layer having a thickness of 50 nm or more has a low drive voltage and a high power efficiency, and can suppress interelectrode short-circuiting and current leakage.

Abstract: Using a perovskite-type compound, an inexpensive host material having a high carrier mobility can be provided. Using a perovskite-type compound as a host material, an inexpensive organic light-emitting device having a high emission efficiency can be realized.

Abstract: Stable perovskite films having substantially-no phase transition within a predetermined temperature range are disclosed. In the films, formation of carrier traps is suppressed. Thermally stable perovskite solar cells and light-emitting devices using the films are also disclosed.

Abstract: A two-dimensional perovskite forming material with an ammonium halide group disposed on its surface can achieve a high carrier mobility. Preferably, the two-dimensional perovskite forming material includes a monolayer that has such an ammonium halide group at a terminal of its molecular structure, and the ammonium halide group in the monolayer is disposed in an ordered fashion on the surface of the material.

Abstract: Disclosed is a current-injection organic semiconductor laser diode comprising a pair of electrodes, an optical resonator structure, and one or more organic layers including a light amplification layer composed of an organic semiconductor, which has a sufficient overlap between the distribution of exciton density and the electric field intensity distribution of the resonant optical mode during current injection to emit laser light.

Abstract: Disclosed are a current excitation type organic semiconductor laser containing a pair of electrodes, an organic laser active layer and an optical resonator structure between the pair of electrodes and a laser having an organic layer on a distributed feedback grating structure. The lasers include a continuous-wave laser, a quasi-continuous-wave laser and an electrically driven semiconductor laser diode.

Abstract: A two-dimensional perovskite forming material with an ammonium halide group disposed on its surface can achieve a high carrier mobility. Preferably, the two-dimensional perovskite forming material includes a monolayer that has such an ammonium halide group at a terminal of its molecular structure, and the ammonium halide group in the monolayer is disposed in an ordered fashion on the surface of the material.

Abstract: The organic EL device of the present invention includes an anode, a cathode (e.g., an Al layer (15)), and an organic layer 20 that is disposed between the anode and the cathode and that includes a light emitting layer 14. At least one side of the anode nearer to the organic layer (20) is formed of a transparent oxide semiconductor layer (e.g., an ITO layer (12)). The molybdenum oxide layer is disposed between the oxide semiconductor layer and the organic layer (20). The thickness of the molybdenum oxide layer is less than 2 nm when the molybdenum oxide layer is assumed to have a uniform thickness.

Abstract: An organic electroluminescence device including: an anode 10 and a cathode 20; two or more organic layers 30, 40 and 50 including an emitting layer 40 between the anode 10 and the cathode 20, the organic layers 30, 40 and 50 including, between the anode 10 and the emitting layer 40, a hole-injecting layer or a hole-transporting layer 30 which contains a thiophene derivative having a molecular weight of 1,200 or less; and an interfacial barrier reduction layer 60 being between two adjacent organic layers 30 and 40 selected from the organic layers 30, 40 and 50, the interfacial barrier reduction layer 60 containing a mixture of at least one material contained in one of the two adjacent organic layers 30 and 40 and at least one material contained in the other of the two adjacent organic layers 30 and 40 at a molar ratio of 1:1 to 1:4.

Abstract: A luminescent device including a plurality of layers including a layer containing a luminescent substance between a first electrode and a second electrode, at least one layer of the plurality of layers containing a thiophene derivative represented by the following formula (1) and a substance exhibiting electron acceptability for the thiophene derivative.