Patents by Inventor Toshinori Wada

Toshinori Wada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11063084
    Abstract: A method for manufacturing a light-emitting element comprises: forming a mask comprising a first film and a second film such that the mask covers a first active layer and a second nitride semiconductor layer, which comprises: forming the first film covering at least an upper surface of the second nitride semiconductor layer, and forming the second film covering the first film; while the first active layer and the second nitride semiconductor layer are covered with the mask, forming a third nitride semiconductor layer at an exposed portion of a first nitride semiconductor layer, wherein a temperature at which the third nitride semiconductor layer is formed is less than a melting point of the second film; and after the forming of the third nitride semiconductor layer, removing the mask, during which lift-off of the mask is performed by removing the first film, which also removes the second film.
    Type: Grant
    Filed: February 21, 2020
    Date of Patent: July 13, 2021
    Assignee: NICHIA CORPORATION
    Inventors: Hirofumi Nishiyama, Seiichi Hayashi, Toshinori Wada
  • Publication number: 20200273905
    Abstract: A method for manufacturing a light-emitting element comprises: forming a mask comprising a first film and a second film such that the mask covers a first active layer and a second nitride semiconductor layer, which comprises: forming the first film covering at least an upper surface of the second nitride semiconductor layer, and forming the second film covering the first film; while the first active layer and the second nitride semiconductor layer are covered with the mask, forming a third nitride semiconductor layer at an exposed portion of a first nitride semiconductor layer, wherein a temperature at which the third nitride semiconductor layer is formed is less than a melting point of the second film; and after the forming of the third nitride semiconductor layer, removing the mask, during which lift-off of the mask is performed by removing the first film, which also removes the second film.
    Type: Application
    Filed: February 21, 2020
    Publication date: August 27, 2020
    Applicant: NICHIA CORPORATION
    Inventors: Hirofumi NISHIYAMA, Seiichi HAYASHI, Toshinori WADA
  • Patent number: 10403769
    Abstract: The invention relates to an electro-conductive paste comprising Ag nano-particles and spherical Ag micro-particles in the preparation of electrodes, particularly in electrical devices, particularly in temperature sensitive electrical devices or solar cells, particularly in HIT (Heterojunction with Intrinsic Thin-layer) solar cells. In particular, the invention relates to a paste, a process for preparing a paste, a precursor, a process for preparing an electrical device and a module comprising electrical devices. The invention relates to a paste comprising the following paste constituents: a. Ag particles, b. a polymer system; wherein the Ag particles have a multi-modal distribution of particle diameter with at least a first maximum in the range from about 1 nm to about less than 1 ?m and at least a further maximum in the range from about 1 ?m to about less than 1 mm; wherein the difference between the first and the further maximum is at least about 0.3 ?m; wherein at least 50 wt.
    Type: Grant
    Filed: August 30, 2013
    Date of Patent: September 3, 2019
    Assignee: HERAEUS DEUTSCHLAND GMBH & CO. KG
    Inventors: Christian Muschelknautz, Matthias Horteis, Isao Tanaka, Klaus Kunze, Roupen Keusseyan, Toshinori Wada, Aziz S. Shaikh
  • Publication number: 20150263192
    Abstract: The invention relates to an electro-conductive paste comprising Ag nano-particles and spherical Ag micro-particles in the preparation of electrodes, particularly in electrical devices, particularly in temperature sensitive electrical devices or solar cells, particularly in HIT (Heterojunction with Intrinsic Thin-layer) solar cells. In particular, the invention relates to a paste, a process for preparing a paste, a precursor, a process for preparing an electrical device and a module comprising electrical devices. The invention relates to a paste comprising the following paste constituents: a. Ag particles, b. a polymer system; wherein the Ag particles have a multi-modal distribution of particle diameter with at least a first maximum in the range from about 1 nm to about less than 1 ?m and at least a further maximum in the range from about 1 ?m to about less than 1 mm; wherein the difference between the first and the further maximum is at least about 0.3 ?m; wherein at least 50 wt.
    Type: Application
    Filed: August 30, 2013
    Publication date: September 17, 2015
    Applicant: HERAEUS PRECIOUS METALS GMBH & CO. KG
    Inventors: Christian Muschelknautz, Matthias Horteis, Isao Tanaka, Klaus Kunze, Roupen Keusseyan, Toshinori Wada, Aziz Shaikh