Patents by Inventor Toshinori Yamazaki

Toshinori Yamazaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Recording material for electrophotography comprising amorphous silicon containing nitrogen
    Patent number: 4518670
    Abstract: Disclosed is a multilayered electrophotographic recording material comprising a charge transfer layer and a charge generating layer on a substrate. The layers are comprised of essentially amorphous silicon. At least 1 atomic percent of nitrogen is present in the charge transfer layer.
    Type: Grant
    Filed: June 3, 1983
    Date of Patent: May 21, 1985
    Assignee: Konishiroku Photo Industry Co., Ltd.
    Inventors: Masatoshi Matsuzaki, Toshinori Yamazaki, Hiroyuki Nomori
  • Electrophotographic photoreceptors having amorphous silicon photoconductors
    Patent number: 4510224
    Abstract: A photoreceptor comprising a photoconductive layer composed of hydrogenated and/or fluorinated amorphous silicon, a surface modifying layer formed on the above photoconductive layer and composed of hydrogenated and/or fluorinated amorphous silicon carbide and a charge transport layer formed below the above photoconductive layer and composed of hydrogenated and/or fluorinated amorphous silicon carbide wherein the thickness "t" of the above surface modifying layer is selected in a range 400 .ANG..ltoreq.t<2,000 .ANG..
    Type: Grant
    Filed: May 3, 1983
    Date of Patent: April 9, 1985
    Assignee: Konishiroku Photo Industry Co., Ltd.
    Inventors: Toshinori Yamazaki, Hiroyuki Nomori, Masatoshi Matsuzaki, Tetsuo Shima, Isao Myokan
  • Photosensitive member for electrophotography comprises inorganic layers
    Patent number: 4495262
    Abstract: Disclosed is a photosensitive member, or an electrophotographic photosensitive member, characterised by having a photoconductive layer comprising at least one of an amorphous hydrogenated and/or fluorinated silicon germanium and an amorphous hydrogenated and/or fluorinated silicon germanium carbide, a first amorphous hydrogenated and/or fluorinated silicon carbide layer formed on the photoconductive layer and a second amorphous hydrogenated and/or fluorinated silicon carbide layer formed beneath said photoconductive layer.
    Type: Grant
    Filed: April 28, 1983
    Date of Patent: January 22, 1985
    Assignee: Konishiroku Photo Industry Co., Ltd.
    Inventors: Masatoshi Matsuzaki, Toshinori Yamazaki, Isao Myokan, Tetsuo Shima, Hiroyuki Nomori