Abstract: A push-pull amplifier includes a voltage inversion circuit 9 that uses an output of the differential amplifier 1 as an input signal, and includes a set of resistors 7a, 7b, and a differential amplifier 8 for inverting the polarity of the input signal, a level shifting circuit 3 that shifts the level of an output signal of the voltage inversion circuit 9 to a prescribed level, while inverting the polarity of the output signal, and an output amplifier circuit 4 that includes complementary transistors which are different from each other in polarity. The transistors are inputted with the above-mentioned input signal and the output signal of the level shifting circuit 3, respectively for carrying out push-pull amplification.

Abstract: A push-pull amplifier is provided which, without depending on the overdrive voltage, can increase the peak value of the gate voltage for the output transistor to a level still higher than the conventional one, and is capable of producing an output current with low consumption current that is higher than that available with conventional push-pull amplifiers. The present invention includes a differential amplifier 1, a voltage buffer amplifier 2, a voltage inversion circuit 9, a level shifting circuit 3, and an output amplifier circuit 4. The voltage inversion circuit 9 uses an output of the differential amplifier 1 as an input signal, and includes a set of resistors 7a, 7b, and a differential amplifier 8 for inverting the polarity of the input signal. The level shifting circuit 3 shifts the level of an output signal of the voltage inversion circuit 9 to a prescribed level, while inverting the polarity of the output signal.

Abstract: The present invention is a folded cascode operational amplifier provided with a differential input portion 10, cascode current source portion 20, current mirror portion 30, output portion 40, and differential amplifier 50 serving as a differential amplifying portion. The differential input portion 10 has P-type MOS transistors M2 and M3 of a differential pair for respectively inputting a differential signal and the MOS transistors M2 and M3 are respectively provided with a well terminal. The differential amplifier 50 compares the source voltage of each of the MOS transistors M2 and M3 with a predetermined reference voltage Vref, generates an output voltage in accordance with the comparison result, and supplies the generated output voltage to well terminals as well voltages of the MOS transistors M2 and M3. An operational amplifier is provided which performs the rail-to-rail operation at a low voltage and in which an input current is zero.

Abstract: The present invention is a folded cascode operational amplifier provided with a differential input portion 10, cascode current source portion 20, current mirror portion 30, output portion 40, and differential amplifier 50 serving as a differential amplifying portion. The differential input portion 10 has P-type MOS transistors M2 and M3 of a differential pair for respectively inputting a differential signal and the MOS transistors M2 and M3 are respectively provided with a well terminal. The differential amplifier 50 compares the source voltage of each of the MOS transistors M2 and M3 with a predetermined reference voltage Vref, generates an output voltage in accordance with the comparison result, and supplies the generated output voltage to well terminals as well voltages of the MOS transistors M2 and M3. An operational amplifier is provided which performs the rail-to-rail operation at a low voltage and in which an input current is zero.

Abstract: In an electronic circuit being provided with a plurality of circuit elements and performing a specified function, a plurality of specific circuit elements related to a circuit performing the specified function out of the plurality of circuit elements are composed of circuit elements changing their element parameters according to values indicated by control signals. The electronic circuit is provided with a plurality of holding circuits for holding a plurality of control signals to be given to the plurality of specific circuit elements. The values of the plurality of control signals which these holding circuits hold are changed by external or internal apparatuses according to a probabilistic searching technique (for example genetic algorithms or simulated annealing algorithms) so that the function of the electronic circuit satisfies designated specifications.

Abstract: A microwave plasma processing apparatus comprises a vacuum processing chamber, a substrate disposed within the vacuum processing chamber, a microwave guide coupled to the vacuum processing chamber, and fins for dividing a microwave in the electric field direction. The length of fins are different such that the uniformity of the film thickness distribution on the substrate of large area can be improved.

Abstract: The present invention relates to a process for manufacturing an optical recording medium comprising a substrate and a laminate of a recording film and an inorganic dielectric film thereon, and the optical recording medium. The process comprises forming the inorganic dielectric film by using a helicon wave plasma CVD method.

Abstract: An apparatus for removing bubbles in paint comprises a sealed container having an upper section and a lower section divided by a plate having one or more slit-like through holes and a pressure reducing device connected to the lower section. A paint coating system includes the bubble removing apparatus, a tank for storing a new paint, a first pipe line to feed paint from the tank to the upper section of the sealed container, a curtain flow coater or a roll coater communicated with the lower section of the sealed container so as to receive paint without bubbles, and a vessel to collect paint which does not contribute to form a coating layer.

Abstract: A plasma processing apparatus comprises a vacuum vessel, an anode and a cathode arranged in the vacuum vessel, and a discharge producing power source for intermittently producing main discharge between the anode and the cathode to process a substrate arranged in the proximity of the anode and the cathode. The discharge producing power source comprises a magnetic field setting device including magnetic coils arranged closely to the vacuum vessel and having pole pieces and alternate current power sources for the magnetic coils. The plasma processing apparatus is able to remarkably increase processing speeds and considerably reduce the temperature rise and damage therefrom of substrates to be processed. Moreover, the magnetic field setting device is arranged in a small size to make the plasma processing apparatus compact and small-sized.

Abstract: A vacuum processing apparatus comprising a load-lock chamber, a vacuum transferring chamber and a processing chamber respectively having evacuating systems for evacuating the respective chambers. The load-lock chamber has a first isolation valve for isolating and opening communication of the load-lock chamber with the atmosphere and a second isolating valve for isolating and opening communication of the load-lock chamber with the vacuum transferring chamber. The processing chamber comprises a vessel detachably located at an arranging aperture formed in a wall of the vacuum transferring chamber and closing the arranging aperture in an air-tight manner from the outside of the apparatus. A substrate arranging portion is arranged in the vacuum transferring chamber so as to be move toward and away from the vessel to form an air-tight chamber space in the vessel isolated from the vacuum transferring chamber when the substrate arranging portion has moved to the vessel.

Abstract: A dome-shaped roof structure for a large construction such as an athletic stadium is capable of partly opening according to the environmental conditions such as weather conditions. The dome-shaped roof structure includes a stationary roof section having a central opening and fixedly secured along an outer periphery thereof to the side wall of the large construction, and a movable roof section including a plurality of roof units corresponding to a plurality of divisions of the central opening and each capable of being radially moved between an open position where the roof unit is supported on the stationary roof section and a closed position where the roof unit is supported on a beam in the central opening.

Abstract: A dome-shaped roof structure for a large construction such as an athletic stadium is capable of being partly opening according to the environmental conditions such as the weather. The dome-shaped roof structure includes a dome-shaped stationary roof section having a central opening and fixedly secured at an outer periphery thereof to the external wall of the construction, and a plurality of movable roof units each having a shape to cover one of a plurality of divisions of the central opening and pivotably secured at one end thereof to a support located near the circumference of the central opening so as to be turned between a first position where the central opening is closed and a second position where the same is opened.

Abstract: Here disclosed are surgical cements useful for filling defect parts and vacant part of bones and teeth, which comprises (a) self-hardening amorphous tricalcium phosphate powder, (b) a component (B) of a surgically acceptable water-soluble poly(carboxylic acid), and (c) water and which is prepared by mixing amorphous tricalcium phosphate powder, the component (B) and water or mixing amorphous tricalcium phosphate and an aqueous solution of the component (B), then kneading the mixture.

Abstract: In apparatus for filling a container suitable for storage with radioactive solid wastes arising from atomic power plants or the like, a plasma arc is irradiated toward a portion of the wastes to melt the portion of the wastes; portions of the wastes are successively moved so as to be subjected to irradiation of the plasma arc to continuously melt the wastes; and the melts obtained by melting the wastes are permitted to flow down toward the bottom of the container.

Abstract: There is presented a photoelectrolyzer comprising a number of minute solar cell elements suspended in an electrolyte. Each element is made of, for example, a first thin film of intrinsic amorphous silicon having specific properties and/or N-type amorphous silicon and a second thin film of a P-type amorphous silicon.This apparatus is high in the sunlight collection efficiency and also is capable of electrolyzing an electrolyte with high electrolysis voltage such as water.

Abstract: An apparatus for filling a container with radioactive solid wastes comprises a melting furnace for melting the wastes and a feed-in device for feeding the wastes into the melting furnace. The wastes introduced into the feed-in device through a charge port are fed laterally and fed from an inlet formed in the side wall of the melting furnace into the melting furnace. The wastes fed into the melting furnace are melted therein, and a resultant melt is poured from an outlet formed in the side wall of the melting furnace into a top-open container placed under the outlet.

Abstract: A device for pulverizing incombustible large solid radioactive wastes arising from atomic power plants or the like. The device comprises a furnace body provided with a vacant space for melting radioactive wastes, a gripper mounted on the furnace body to support the radioactive waste, plasma torches mounted on the furnace body to irradiate a plasma arc toward the lower end of the wastes, and a water vessel disposed below the vacant space.

Abstract: A photovoltaic device including a plurality of amorphous silicon unit cells each having a p-i-n structure layered in succession on a substrate made of stainless steel. A transparent electrically conductive layer, for withdrawing a photoelectromotive force in cooperation with the electrically conductive substrate, is formed on the uppermost unit cell, so that rays of light may be incident upon the photovoltaic device from the uppermost unit cell. Preferably, the thickness of the unit cells closer to the light incidence surface is selected to be less than the thickness of the unit cells farther from the light incident surface. Each of the unit cells is structured such that the n type, i type and p type layers are disposed in the above described order from the light incidence surface in terms of the impurity type.