Patents by Inventor Toshio Anbe

Toshio Anbe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Single crystal growth method
    Patent number: 5408952
    Abstract: In the present invention a signal is caused to fall on the molten liquid surface of single crystal raw material which was put into a crucible, the position of the molten liquid surface is measured by detecting the reflected signal coming from the molten liquid surface and the crucible is lifted according to the discrepancy to the set value.
    Type: Grant
    Filed: December 28, 1992
    Date of Patent: April 25, 1995
    Assignees: Mitsubishi Materials Corporation, Mitsubishi Materials Silicon Corporation
    Inventors: Daisuke Wakabayashi, Toshio Anbe, Masao Saitoh