Abstract: A leg garment according to the present invention includes a body portion covering at least an instep, a sole and an ankle of a leg. The leg garment includes a support strip exerting a tightening force larger than that of a portion of the leg garment around the support strip. The support strip is arranged in the shape of an inwardly-wound helix extending from the instep to the ankle through the sole. The support strip includes: a first tightening portion arranged so as to medially extend from the instep to the sole; and a second tightening portion arranged so as to extend obliquely upward from a lateral side to a medial side of a ventral ankle, the second tightening portion compressing the ventral ankle via a surface thereof.

Abstract: A leg garment according to the present invention includes a body portion covering at least an instep, a sole and an ankle of a leg. The leg garment includes a support strip exerting a tightening force larger than that of a portion of the leg garment around the support strip. The support strip is arranged in the shape of an inwardly-wound helix extending from the instep to the ankle through the sole. The support strip includes: a first tightening portion arranged so as to medially extend from the instep to the sole; and a second tightening portion arranged so as to extend obliquely upward from a lateral side to a medial side of a ventral ankle, the second tightening portion compressing the ventral ankle via a surface thereof.

Abstract: The present invention provides a method of manufacturing a semiconductor device which includes an amorphous semiconductor film forming treatment of supplying a starting material gas containing germanium to a semiconductor substrate, thereby forming an amorphous semiconductor film containing the germanium on the semiconductor substrate. Further, it also provides a semiconductor device of a novel structure manufactured by the manufacturing method.