Abstract: There is provision of a method of controlling a plasma processing apparatus including a chamber in which a plasma is generated, a substrate holder, a radio frequency power supply configured to supply radio frequency electric power to the substrate holder, a matching device provided between the substrate holder and the radio frequency power supply. The method includes acquiring output impedance of the matching device in a state in which impedance matching is achieved; obtaining F-parameters indicating electrical characteristics of the chamber; calculating a degree of high harmonic component generation; and controlling the output impedance of the matching device based on the degree of high harmonic component generation.

Abstract: There is provision of a method of controlling a plasma processing apparatus including a chamber in which a plasma is generated, a substrate holder, a radio frequency power supply configured to supply radio frequency electric power to the substrate holder, a matching device provided between the substrate holder and the radio frequency power supply. The method includes acquiring output impedance of the matching device in a state in which impedance matching is achieved; obtaining F-parameters indicating electrical characteristics of the chamber; calculating a degree of high harmonic component generation; and controlling the output impedance of the matching device based on the degree of high harmonic component generation.

Abstract: In a method of an embodiment, radicals, which are generated from a processing gas, is adsorbed to a layer to be etched without applying a high-frequency bias to a lower electrode, in an adsorption step. In the subsequent etching step, ions, which are generated from the processing gas, are drawn into the layer to be etched by applying a high-frequency bias to the lower electrode. The adsorption step and the etching step are alternately repeated. In the adsorption step, a density of radicals is 200 or greater times a density of ions. In the etching step, RF energy having a power density of 0.07 W/cm2 or less is supplied to the lower electrode or a high-frequency bias having a power density of 0.14 W/cm2 or less is supplied to the lower electrode for a period of 0.5 seconds or less.

Abstract: A manufacturing method for a cast bar and tube made of a magnesium alloy, includes steps of preparing a manufacturing device; depressurizing a vacuum chamber through a depressurization device; heating a vicinity of an opening of a hollow tube; inserting the opening of the hollow tube into a molten metal; switching a valve member to be open; introducing the molten metal into a cylindrical part, and filling the cylindrical part with the molten metal; cooling the hollow tube; and continuously vibrating the hollow tube until completing solidification of the molten metal in the cylindrical part.

Abstract: Provided is a plasma processing apparatus in which a variable inductor is installed in series with a variable condenser in a second power feeding unit that distributes and supplies high-frequency power to an inner upper electrode 56. As a result, a characteristic around a resonance point may be broad in a capacitance-outer/inner power distribution ratio of the variable condenser (varicon). Therefore, an area around the resonance point may be stably used as a controllable area within a variable range of varicon capacitance.

Abstract: In a method of an embodiment, radicals, which are generated from a processing gas, is adsorbed to a layer to be etched without applying a high-frequency bias to a lower electrode, in an adsorption step. In the subsequent etching step, ions, which are generated from the processing gas, are drawn into the layer to be etched by applying a high-frequency bias to the lower electrode. The adsorption step and the etching step are alternately repeated. In the adsorption step, a density of radicals is 200 or greater times a density of ions. In the etching step, RF energy having a power density of 0.07 W/cm2 or less is supplied to the lower electrode or a high-frequency bias having a power density of 0.14 W/cm2 or less is supplied to the lower electrode for a period of 0.5 seconds or less.

Abstract: The present invention provides a hypereutectic aluminum-silicon alloy die-cast member which contains 20.0% by mass to 30.0% by mass of silicon and also has a thickness of 2.5 mm or less, and a method for producing the same. Disclosed is a die-cast member made of a hypereutectic aluminum-silicon alloy containing 20.0% by mass to 30.0% by mass of silicon, wherein the die-cast member has a thickness of 2.5 mm or less and an average size of primary crystal Si is 0.04 mm to 0.20 mm.

Abstract: A manufacturing method for a cast bar and tube made of a magnesium alloy, includes steps of preparing a manufacturing device; depressurizing a vacuum chamber through a depressurization device; heating a vicinity of an opening of a hollow tube; inserting the opening of the hollow tube into a molten metal; switching a valve member to be open; introducing the molten metal into a cylindrical part, and filling the cylindrical part with the molten metal; cooling the hollow tube; and continuously vibrating the hollow tube until completing solidification of the molten metal in the cylindrical part.

Abstract: The present disclosure provides a method of performing a plasma processing on a substrate by using a plasma processing apparatus including a processing container; an outer upper electrode provided to face a lower electrode; an inner upper electrode disposed inside the outer upper electrode; a first high-frequency power supply; a first power feeding unit; a second power feeding unit; and a variable condenser. The first and second power feeding units, a fixed condenser formed between the outer upper electrode and the inner upper electrode, and a closed circuit including the variable condenser become a resonance state when the variable condenser has a capacitance value in a predetermined resonance region. The method includes selectively using a capacitance value in a first region lower than the resonance region of the variable condenser and a capacitance value in a second region higher than the resonance region to perform the plasma processing.

Abstract: A manufacturing device for a cast bar and tube includes a molten metal furnace for holding a dissolved casting material, a hollow tube having a penetrating part of molten metal for penetrating molten metal, a depressurization device for reducing the pressure, a connection member for connecting the hollow tube to the depressurization device, and an open/close type valve member installed on the connection member. The penetrating part of molten metal is depressurized by switching the valve member to the closed state to reduce the pressure in the side of the depressurization device from the valve member using the depressurization device and inserting an opening of the hollow tube into the molten metal furnace as well as by switching the valve member to the open state.

Abstract: The present invention provides a hypereutectic aluminum-silicon alloy die-cast member which contains 20.0% by mass to 30.0% by mass of silicon and also has a thickness of 2.5 mm or less, and a method for producing the same. Disclosed is a die-cast member made of a hypereutectic aluminum-silicon alloy containing 20.0% by mass to 30.0% by mass of silicon, wherein the die-cast member has a thickness of 2.5 mm or less and an average size of primary crystal Si is 0.04 mm to 0.20 mm.

Abstract: The present disclosure provides a method of performing a plasma processing on a substrate by using a plasma processing apparatus including a processing container; an outer upper electrode provided to face a lower electrode; an inner upper electrode disposed inside the outer upper electrode; a first high-frequency power supply; a first power feeding unit; a second power feeding unit; and a variable condenser. The first and second power feeding units, a fixed condenser formed between the outer upper electrode and the inner upper electrode, and a closed circuit including the variable condenser become a resonance state when the variable condenser has a capacitance value in a predetermined resonance region. The method includes selectively using a capacitance value in a first region lower than the resonance region of the variable condenser and a capacitance value in a second region higher than the resonance region to perform the plasma processing.

Abstract: Provided is a plasma processing apparatus in which a variable inductor is installed in series with a variable condenser in a second power feeding unit that distributes and supplies high-frequency power to an inner upper electrode 56. As a result, a characteristic around a resonance point may be broad in a capacitance-outer/inner power distribution ratio of the variable condenser (varicon). Therefore, an area around the resonance point may be stably used as a controllable area within a variable range of varicon capacitance.

Abstract: There is provided a plasma etching method capable of achieving a sufficient organic film modifying effect by high-velocity electrons. In forming a hole in an etching target film by plasma etching, a first condition of generating plasma within a processing chamber by way of turning on a plasma-generating high frequency power application unit and a second condition of not generating the plasma within the processing chamber by way of turning off the plasma-generating high frequency power application unit are repeated alternately. Further, a negative DC voltage is applied from a first DC power supply such that an absolute value of the applied negative DC voltage during a period of the second condition is greater than an absolute value of the applied negative DC voltage during a period of the first condition.

Abstract: There is provided a plasma etching method capable of achieving a sufficient organic film modifying effect by high-velocity electrons. In forming a hole in an etching target film by plasma etching, a first condition of generating plasma within a processing chamber by way of turning on a plasma-generating high frequency power application unit and a second condition of not generating the plasma within the processing chamber by way of turning off the plasma-generating high frequency power application unit are repeated alternately. Further, a negative DC voltage is applied from a first DC power supply such that an absolute value of the applied negative DC voltage during a period of the second condition is greater than an absolute value of the applied negative DC voltage during a period of the first condition.

Abstract: A magnesium metal thin plate manufacturing method includes at least a casting process of supplying a molten metal obtained by melting a magnesium metal to a molten metal bath, drawing out the molten metal, supplying the molten metal into the gap between a pair of casting rolls composed of at least a pair of casting upper roll and casting lower roll, applying pressure to the molten metal, and casting a plate solidified at a predetermined temperature and having a predetermined thickness, and a rolling process of rolling the cast plate by means of at least a pair of rolling rolls by applying pressure thereto to manufacture a magnesium metal thin plate. With the above arrangement, there can be provided a magnesium metal thin plate manufacturing method and manufacturing apparatus that can effectively manufacture a magnesium metal thin plate by plastic working without requiring a heat energy generation step again in rolling.

Abstract: A magnesium metal thin plate manufacturing method includes at least a casting process of supplying a molten metal obtained by melting a magnesium metal to a molten metal bath, drawing out the molten metal, supplying the molten metal into the gap between a pair of casting rolls composed of at least a pair of casting upper roll and casting lower roll, applying pressure to the molten metal, and casting a plate solidified at a predetermined temperature and having a predetermined thickness, and a rolling process of rolling the cast plate by means of at least a pair of rolling rolls by applying pressure thereto to manufacture a magnesium metal thin plate. With the above arrangement, there can be provided a magnesium metal thin plate manufacturing method and manufacturing apparatus that can effectively manufacture a magnesium metal thin plate by plastic working without requiring a heat energy generation step again in rolling.

Abstract: A magnesium metal thin plate manufacturing method includes at least a casting process of supplying a molten metal obtained by melting a magnesium metal to a molten metal bath, drawing out the molten metal, supplying the molten metal into the gap between a pair of casting rolls composed of at least a pair of casting upper roll and casting lower roll, applying pressure to the molten metal, and casting a plate solidified at a predetermined temperature and having a predetermined thickness, and a rolling process of rolling the cast plate by means of at least a pair of rolling rolls by applying pressure thereto to manufacture a magnesium metal thin plate. With the above arrangement, there can be provided a magnesium metal thin plate manufacturing method and manufacturing apparatus that can effectively manufacture a magnesium metal thin plate by plastic working without requiring a heat energy generation step again in rolling.

Abstract: To provide a loading device in a magnetooptical disc recording apparatus having a sufficiently wide space for the magnetooptical disc between an elevation mechanism and a driving unit without positioning a holder lever constituting the elevation mechanism between a clamper and the driving unit, and a space for avoiding contact between the holder lever and the magnetooptical disc, an elevation mechanism and a plurality of holder levers are disposed removably in a radially outward direction to be substantially flush with the clamper and adapted to give a vertical motion and a opening and closing operation in a radial direction to the holder lever in cooperation with the rotation of the clamper base. When the magnetooptical disc is loaded or unloaded, the clamper is moved upwardly by engagement with the holder lever to maintain said sufficient space.

Abstract: To provide a loading device in a magnetooptical disc recording apparatus having a sufficiently wide space for the magnetooptical disc between an elevation mechanism and a driving unit without positioning a holder lever constituting the elevation mechanism between a clamper and the driving unit, and a space for avoiding contact between the holder lever and the magnetooptical disc, an elevation mechanism and a plurality of holder levers are disposed removably in a radially outward direction to be substantially flush with the clamper and adapted to give a vertical motion and a opening and closing operation in a radial direction to the holder lever in cooperation with the rotation of the clamper base. When the magnetooptical disc is loaded or unloaded, the clamper is moved upwardly by engagement with the holder lever to maintain said sufficient space.