Abstract: A method for manufacturing a dielectric thin film capacitor without causing cracks in a protective layer which covers a capacitor portion is provided. The method for manufacturing the dielectric thin film capacitor includes a step of forming a tapered resist pattern on a capacitor structure and a dry etching step so as to taper the end portion of the capacitor. Furthermore, a heating treatment is conducted after tapering.

Abstract: A surface acoustic wave device includes a piezoelectric substrate and at least one interdigital electrode disposed on the piezoelectric substrate. The interdigital electrode is made of ?-tantalum.

Abstract: A resist pattern is provided on a substrate and includes a first resist layer provided on the substrate and defined by a first organic material which dissolves in an organic solvent, water, or a solvent primarily composed of water, a second resist layer defined by a second organic material provided on the first resist layer, the second organic material having a high absorbance of a light having a predetermined wavelength, and a third resist layer defined by a third organic material provided on the second resist layer, the organic material having a resistance to dry etching and being photosensitive to the light.

Abstract: A surface acoustic wave device includes a piezoelectric substrate and at least one interdigital electrode disposed on the piezoelectric substrate. The interdigital electrode is made of &agr;-tantalum.

Abstract: A surface acoustic wave device includes a piezoelectric substrate and at least one interdigital electrode disposed on the piezoelectric substrate. The interdigital electrode is made of &agr;-tantalum.

Abstract: A resist pattern is provided on a substrate and includes a first resist layer provided on the substrate and defined by a first organic material which dissolves in an organic solvent, water, or a solvent primarily composed of water, a second resist layer defined by a second organic material provided on the first resist layer, the second organic material having a high absorbance of a light having a predetermined wavelength, and a third resist layer defined by a third organic material provided on the second resist layer, the organic material having a resistance to dry etching and being photosensitive to the light.

Abstract: If a first pattern defect is detected at the (n-2)th step, a pattern defect is retrieved at the (n-1)th step. It is decided that all pattern defects detected at the (n-1)th step in a predetermined region where the first pattern defect is detected are generated at the (n-2)th step. If second and third pattern defects are detected in other regions than the predetermined region, it is decided that the second and third pattern defects are generated at the (n-1)th step. Then, a pattern defect at the n-th step is retrieved. It is decided that all pattern defects detected at the n-th step in a predetermined region where the second and third pattern defects are detected at the (n-1)th step are generated at the (n-1)th step. If fourth, fifth and sixth pattern defects are detected in other regions than the predetermined region where the second and third pattern defects are detected, it is decided that the fourth, fifth and sixth pattern defects are generated at the n-th step.

Abstract: A method and an apparatus for checking and detecting foreign matter on the surface of a semiconductor substrate with high and stable sensitivity, and with high precision. The respective reflectivities at which light of various wavelengths within a wide wavelength range is reflected from each multi-layer thin film substrate are measured, and light of a wavelength at which the light is reflected at a local-maximum reflectivity is selected as monitor light for foreign matter checking with respect to each substrate. The apparatus comprises, as a light source, a light source for generating light within a wide wavelength range and a filter for narrowing the wavelength range of light so as to obtain monitor light which is to be radiated onto a substrate to check foreign matter. Variations in detection sensitivity due to slight variations in the thickness of deposited films on semiconductor substrates can be restrained to thereby realize foreign matter checking with stable sensitivity.