Patents by Inventor Toshio Hama

Toshio Hama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Dry processes for treating combustion exhaust gas
    Patent number: 5171552
    Abstract: The invention provides a furnace desulfurization process which includes supplying a desulfurizing agent into a furnace or flue to cause the agent to absorb SO.sub.
    Type: Grant
    Filed: July 13, 1990
    Date of Patent: December 15, 1992
    Assignee: Hitachi Zosen Corporation
    Inventors: Yoshimasa Miura, Etsuo Ogino, Michio Ito, Toshio Hama, Shigenori Onitsuka, Michio Ishida, Teruyuki Doi, Teruhiko Kawanabe
  • Method for producing thin-film photoelectric transducer
    Patent number: 4728615
    Abstract: An apparatus and method for producing a thin-film photoelectric transducer. The transducer has a transparent substrate, an amorphous silicon layer and a metal layer; the apparatus has a processing laser for patterning each of the layers. In addition, a separate visible laser is used to detect defects in the layers and the processor laser is then used to correct the defects.
    Type: Grant
    Filed: September 16, 1985
    Date of Patent: March 1, 1988
    Assignees: Fuji Electric Company Ltd., Fuji Electric Corporate Research and Development Ltd.
    Inventors: Yoshiyuki Uchida, Masaharu Nishiura, Toshio Hama
  • Non-crystalline semiconductor solar battery and method of manufacture thereof
    Patent number: 4700463
    Abstract: The invention involves (1) forming a transparent conductive film on an insulating transparent substrate, with the transparent conductive film defining a first electrode, (2) forming a non-crystalline semiconductor film on the transparent conductive film, (3) detecting any pinholes existing in the non-crystalline semiconductor film, (4) applying a laser beam in a reducing atmosphere through the detected pinholes to portions of the transparent conductive film located at portions of the pinholes, such that the portions of the transparent conductive film located at positions at which the pinholes are present are caused to have a high resistance by reduction, and (5) finally forming a metal film on the non-crystalline semiconductor film to define a second electrode.
    Type: Grant
    Filed: September 4, 1986
    Date of Patent: October 20, 1987
    Assignee: Fuji Electric Company Ltd.
    Inventor: Toshio Hama
  • Process for producing highly active denitrating catalysts
    Patent number: 4206081
    Abstract: A highly active denitrating catalyst is produced by converting the surface layer of steel material to an aluminum alloy, treating the resulting steel material with an aluminum dissolving solution to dissolve out the aluminum and to render the surface layer porous, and immersing the steel material having the porous surface layer in a solution containing a vanadium compound to cause the porous surface layer to support the vanadium compound.
    Type: Grant
    Filed: November 3, 1977
    Date of Patent: June 3, 1980
    Assignee: Hitachi Shipbuilding & Engineering Co., Ltd.
    Inventors: Hideya Inaba, Kazuo Maeda, Yasumi Kamino, Toshio Hama, Kenichi Nagai, Masayoshi Ichiki