Abstract: A laser irradiation method sets scan lines in an x direction in parallel, and in a y direction to be separate by an inter-scan-line distance Py corresponding to laser irradiation areas of a processing target object, orients a length direction of a linear laser spot with length Wy and width Wx in the y direction, and irradiates target object with the laser spot in each of irradiation positions arranged at width direction intervals ? while moving the laser spot relative to the target object along the scan lines. The method includes determining the inter-scan-line distance Py, the width direction interval ?, and a position shift quantity ?x (where, 0<?x<?) so that the irradiation positions on adjacent scan lines are shifted in the x direction by the position shift quantity ?x and a cumulative value of the applied laser intensity is substantially equalized.

Abstract: A laser irradiation method sets scan lines in an x direction in parallel, and in a y direction to be separate by an inter-scan-line distance Py corresponding to laser irradiation areas of a processing target object, orients a length direction of a linear laser spot with length Wy and width Wx in the y direction, and irradiates target object with the laser spot in each of irradiation positions arranged at width direction intervals ? while moving the laser spot relative to the target object along the scan lines. The method includes determining the inter-scan-line distance Py, the width direction interval ?, and a position shift quantity ?x (where, 0<?x<?) so that the irradiation positions on adjacent scan lines are shifted in the x direction by the position shift quantity ?x and a cumulative value of the applied laser intensity is substantially equalized.

Abstract: A laser optical system using optical fiber transmission, includes a first optical fiber for transmitting laser light emitted from a laser oscillator, a collimator lens for collimating laser light emitted from the first optical fiber, a spherical array lens including a plurality of cells for converging laser light emitted from the collimator lens into a plurality of spots, a plurality of second optical fibers each having a smaller core diameter than the first optical fiber and configured to admit the laser light converged into the corresponding spot by the spherical array lens, the second optical fibers having output ends that have mutually parallel axial lines and are arranged linearly in a single row, and a linearization optical unit for shaping laser light emitted from the second optical fibers into laser light having a linear cross section at an illuminated surface.

Abstract: A laser optical system using optical fiber transmission, includes a first optical fiber for transmitting laser light emitted from a laser oscillator, a collimator lens for collimating laser light emitted from the first optical fiber, a spherical array lens including a plurality of cells for converging laser light emitted from the collimator lens into a plurality of spots, a plurality of second optical fibers each having a smaller core diameter than the first optical fiber and configured to admit the laser light converged into the corresponding spot by the spherical array lens, the second optical fibers having output ends that have mutually parallel axial lines and are arranged linearly in a single row, and a linearization optical unit for shaping laser light emitted from the second optical fibers into laser light having a linear cross section at an illuminated surface.

Abstract: A laser crystallization method in which an amorphous silicon thin film 2 formed on a substrate 1 is irradiated with a laser beam, the method including the steps of providing the amorphous silicon thin film 2 with an absorbent to form an absorbent layer 3 on the desired specific local areas of the amorphous silicon thin film 2 and laser annealing for crystallizing the specific local areas of the amorphous silicon thin film 2 by irradiating the amorphous silicon thin film 2 including the specific local areas with a semiconductor laser beam L having a specific wavelength absorbable by the absorbent layer 3 and unabsorbable by the amorphous silicon thin film 2 for heating the absorbent layer 3.

Abstract: A laser crystallization method in which an amorphous silicon thin film 2 formed on a substrate 1 is irradiated with a laser beam, the method including the steps of providing the amorphous silicon thin film 2 with an absorbent to form an absorbent layer 3 on the desired specific local areas of the amorphous silicon thin film 2 and laser annealing for crystallizing the specific local areas of the amorphous silicon thin film 2 by irradiating the amorphous silicon thin film 2 including the specific local areas with a semiconductor laser beam L having a specific wavelength absorbable by the absorbent layer 3 and unabsorbable by the amorphous silicon thin film 2 for heating the absorbent layer 3.

Abstract: A first laser beam (2) and a second laser beam (3) composed of an ultraviolet laser are irradiated from a side of a second glass member (5b), allowing the first laser beam (2) to pass through the second glass member (5b) so as to condense the first laser beam (2) on the first glass member (5a) to form a first scribe line (14), condensing the second laser beam (3) on the second glass member (5b) to form a second scribe line (15), and applying a break force to the first scribe line (14) and the second scribe line (15) to cut the glass.

Abstract: A mask distance a is adjusted with magnification control unit and mask-shift servo-control unit, and a base plate distance b is adjusted with focus control unit, AFC control unit and table-shift servo-control unit, so that a/b is kept constant, and 1/f=1/a+1/b is satisfied. Even when a focal distance of projection lens fluctuates from temperature change of projection lens due to laser beams, projection magnification is able to be kept constant and focusing is precisely carried out upon imaging mask on the base. The invention is usable for ELA (excimer laser anneal) apparatus of SLS (Sequential Lateral Solidification) type.

Abstract: In the case of forming a scribe line by irradiating a laser in an ultraviolet range in one stroke, the glass bending strength after glass is cut is about 50 MPa or less, and the glass is likely to be subjected to crack damage during use as liquid crystal panel glass or the like. In a glass cutting method in which a portion to be cut of glass 4 is irradiated with a pulse laser 2 in one stroke of relative movement to form a scribe line 7, and then the glass is cut by applying a break force to the scribe line 7, a pulse laser of an ultraviolet range is used as the pulse laser 2, and the pulse laser 2 is irradiated while the pulse laser 2 is being relatively moved so that the total number of pulses at each irradiation portion is in a range of 2,667 to 8,000 pulses, whereby the scribe line 7 is formed to a depth of 1.8 to 6.3% of the thickness of the glass 4.

Abstract: According to the present invention, a first laser beam 2 and a second laser beam 3 composed of an ultraviolet laser are irradiated from a side of a second glass member 5b, allowing the first laser beam 2 to pass through the second glass member 5b so as to condense the first laser beam 2 on the first glass member 5a to form a first scribe line 14, condensing the second laser beam 3 on the second glass member 5b to form a second scribe line 15, and applying a break force to the first scribe line 14 and the second scribe line 15 to cut the glass.