Patents by Inventor Toshio Joge

Toshio Joge has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110132423
    Abstract: A photovoltaic solar cell module comprises a plurality of bifacial solar cells and electrical conductors. Each bifacial solar cell comprises a plurality of bus-bar contacts. A phosphorous silicon glass layer is formed on one side of the bifacial cell by phosphorous diffusion, and a boron silicon glass layer is formed on the other side of the bifacial cell by boron diffusion. The phosphorous diffusion and the boron diffusion are conducted by a face-to-face diffusion method. The combination of the two gettering methods substantially increases the minority carrier life time of the bifacial solar cell.
    Type: Application
    Filed: October 11, 2007
    Publication date: June 9, 2011
    Applicant: Gamma Solar
    Inventors: Toshio Joge, Rodolfo J. Magasrevy
  • Patent number: 7495167
    Abstract: It is an object of the present invention to provide a silicon solar cell with n+pp+ BSF structure using solar grade silicon substrate, having a life time close to the initial level of the substrate. The solar cell of the present invention is produced by a back side boron diffusion step for diffusing boron on a back side of the substrate, a front side phosphorus diffusion step for diffusing phosphorus on a front side of the substrate, a low-temperature annealing step for annealing the substrate at 600° C. or lower for 1 hour or more, and an electrode firing step carried out at a peak temperature of 700° C. or lower for 1 minute or less, carried out in this order.
    Type: Grant
    Filed: October 8, 2004
    Date of Patent: February 24, 2009
    Assignee: Hitachi, Ltd.
    Inventors: Toshio Joge, Ichiro Araki, Tomonori Hosoya
  • Publication number: 20050133084
    Abstract: It is an object of the present invention to provide a silicon solar cell with n+pp+ BSF structure using solar grade silicon substrate, having a life time close to the initial level of the substrate. The solar cell of the present invention is produced by a back side boron diffusion step for diffusing boron on a back side of the substrate, a front side phosphorus diffusion step for diffusing phosphorus on a front side of the substrate, a low-temperature annealing step for annealing the substrate at 600° C. or lower for 1 hour or more, and an electrode firing step carried out at a peak temperature of 700° C. or lower for 1 minute or less, carried out in this order.
    Type: Application
    Filed: October 8, 2004
    Publication date: June 23, 2005
    Inventors: Toshio Joge, Ichiro Araki, Tomonori Hosoya