Abstract: Hinge devices couple light source units to a base such that the light source units are rotatable around first axes. Each light source unit is rotatable between a first position and a second position around a corresponding first axis of the first axes. Rotation mechanisms couple the light source units to the hinge devices such that the light source units are rotatable around second axes transverse to the first axes. The hinge devices are configured such that when each light source unit rotates from the first position to the second position, rotation directions of the light source units are different. The rotation mechanisms define rotation ranges of the light source units around the second axes to achieve a reference state where the light source units are collected together and light-outgoing surfaces of the light source units face outward when each light source unit is in the first position.

Abstract: Hinge devices couple light source units to a base such that the light source units are rotatable around first axes. Each light source unit is rotatable between a first position and a second position around a corresponding first axis of the first axes. Rotation mechanisms couple the light source units to the hinge devices such that the light source units are rotatable around second axes transverse to the first axes. The hinge devices are configured such that when each light source unit rotates from the first position to the second position, rotation directions of the light source units are different. The rotation mechanisms define rotation ranges of the light source units around the second axes to achieve a reference state where the light source units are collected together and light-outgoing surfaces of the light source units face outward when each light source unit is in the first position.

Abstract: The present invention provides an efficient heat treatment such as activation treatment of impurities on a substrate such as a thick silicon wafer with large heat capacity by laser annealing. Provided is a laser annealing apparatus 1 for heat-treating a surface of a substrate 30 comprising: a pulse oscillation laser source 10 which generates a pulse laser with gentle rise time and long pulse width; a continuous wave laser source 20 which generates a near-infrared laser for assisting annealing; optical systems 12, 22 which shape and guide beams 15, 25 of the two types of lasers respectively so as to irradiate the surface of the substrate 30 therewith; and a moving device 3 which moves the substrate 30 relatively to the laser beams 15, 25 to allow scanning of the combined irradiation of the two types of laser beams.

Abstract: To provide a semiconductor device having improved performance while improving the throughput in the manufacturing steps of the semiconductor device. An insulating film portion comprised of first, second, third, fourth, and fifth insulating films is formed on a semiconductor substrate. The second insulating film is a first charge storage film and the fourth insulating film is a second charge storage film. The first charge storage film contains silicon and nitrogen; the third insulating film contains silicon and oxygen; and the second charge storage film contains silicon and nitrogen. The thickness of the third insulating film is smaller than that of the first charge storage film and the thickness of the second charge storage film is greater than that of the first charge storage film. The third insulating film is formed by treating the upper surface of the first charge storage film with a water-containing treatment liquid.

Abstract: To provide a semiconductor device having improved performance while improving the throughput in the manufacturing steps of the semiconductor device. An insulating film portion comprised of first, second, third, fourth, and fifth insulating films is formed on a semiconductor substrate. The second insulating film is a first charge storage film and the fourth insulating film is a second charge storage film. The first charge storage film contains silicon and nitrogen; the third insulating film contains silicon and oxygen; and the second charge storage film contains silicon and nitrogen. The thickness of the third insulating film is smaller than that of the first charge storage film and the thickness of the second charge storage film is greater than that of the first charge storage film. The third insulating film is formed by treating the upper surface of the first charge storage film with a water-containing treatment liquid.

Abstract: An automatic gearshift device for a power tool includes a speed reduction mechanism that decelerates and transmits a rotary power of a motor, a ring gear that slides and moves to switch a speed reduction ratio, a cam member that moves the ring gear, a rotation body rotated in cooperation with the cam member, a position detector that detects the position of the ring gear, and a controller that controls the driving of the gearshift motor based on the value generated by the position detector. An adjustment gear forming the rotation body includes a slot used as a positioning mark at a predetermined location in the rotating direction. When the slot of the adjustment gear is aligned with a predetermined device side positioning reference, the rotation body is positioned in an initial position in a relative positional relationship with the ring gear.

Abstract: The present invention provides an efficient heat treatment such as activation treatment of impurities on a substrate such as a thick silicon wafer with large heat capacity by laser annealing. Provided is a laser annealing apparatus 1 for heat-treating a surface of a substrate 30 comprising: a pulse oscillation laser source 10 which generates a pulse laser with gentle rise time and long pulse width; a continuous wave laser source 20 which generates a near-infrared laser for assisting annealing; optical systems 12, 22 which shape and guide beams 15, 25 of the two types of lasers respectively so as to irradiate the surface of the substrate 30 therewith; and a moving device 3 which moves the substrate 30 relatively to the laser beams 15, 25 to allow scanning of the combined irradiation of the two types of laser beams.

Abstract: An automatic gearshift device for a power tool includes a speed reduction mechanism that decelerates and transmits a rotary power of a motor, a ring gear that slides and moves to switch a speed reduction ratio, a cam member that moves the ring gear, a rotation body rotated in cooperation with the cam member, a position detector that detects the position of the ring gear, and a controller that controls the driving of the gearshift motor based on the value generated by the position detector. An adjustment gear forming the rotation body includes a slot used as a positioning mark at a predetermined location in the rotating direction. When the slot of the adjustment gear is aligned with a predetermined device side positioning reference, the rotation body is positioned in an initial position in a relative positional relationship with the ring gear.

Abstract: An image processing apparatus includes a data supply node to receive line data scanned in a main scan direction of an image, an image enlargement unit coupled to the data supply node to apply to the line data an enlargement process for enlarging the image by an enlargement factor equal to an integer so as to produce enlarged data at an output node, and an image reduction unit coupled to the output node of the image enlargement unit to apply to the enlarged data a reduction process for reducing the enlarged image by a desired reduction factor so as to produce reduced data at an output node.

Abstract: Disclosed is an antenna capable of receiving a very wide band of frequencies. The antenna includes a pair of antenna elements and a pair of feeding legs, which are arranged symmetrically with respect to a line L, with a narrow space G in between.

Abstract: The present invention provides an efficient heat treatment such as activation treatment of impurities on a substrate such as a thick silicon wafer with large heat capacity by laser annealing. Provided is a laser annealing apparatus 1 for heat-treating a surface of a substrate 30 comprising: a pulse oscillation laser source 10 which generates a pulse laser with gentle rise time and long pulse width; a continuous wave laser source 20 which generates a near-infrared laser for assisting annealing; optical systems 12, 22 which shape and guide beams 15, 25 of the two types of lasers respectively so as to irradiate the surface of the substrate 30 therewith; and a moving device 3 which moves the substrate 30 relatively to the laser beams 15, 25 to allow scanning of the combined irradiation of the two types of laser beams.

Abstract: Disclosed is an antenna capable of receiving a very wide band of frequencies. The antenna includes a pair of antenna elements and a pair of feeding legs, which are arranged symmetrically with respect to a line L, with a narrow space G in between.

Abstract: In order to provide a radio wave absorber that can be produced easily and has excellent radio wave absorption characteristics, a conductive surface 2 of a conductive paint 6 is formed on one surface 1a of a mat-shaped inorganic fiber bulk material 1.

Abstract: A laser annealing process capable of suppressing a variation in sheet resistance. A surface layer formed shallower than 100 nm in a substrate of semiconductor material is added with impurities. The substrate is irradiated with a laser beam or its harmonic beam emitted from a laser diode pumped to solid-state laser to activate the impurities.

Abstract: An electromagnetic screen (1) comprises a plurality of antennas (4) each of which reflects an electromagnetic wave having a specific frequency. The plurality of antennas (4) are arranged so as to constitute a pattern. Each of the antennas (4) has three segment-shaped first element parts (4a) and three segment-shaped second element parts (4b). The three first element parts (4a) radially extend from the center of the antenna (4) by substantially the same length such that any two of the three first element parts (4a) form an angle of 120° with each other. Each of the second element parts (4b) are connected to an outer edge of a corresponding one of the first element parts (4a).

Abstract: In order to provide a radio wave absorber that can be produced easily and has excellent radio wave absorption characteristics, a conductive surface 2 of a conductive paint 6 is formed on one surface 1a of a mat-shaped inorganic fiber bulk material 1.

Abstract: A memory cell has a control gate electrode disposed on a main surface of a semiconductor substrate through a gate insulating film, an ONO film disposed along a side surface of the control gate electrode and the main surface of semiconductor substrate, a memory gate electrode disposed on a side surface of the control gate electrode and also on the main surface of the semiconductor substrate through the ONO film. The control gate electrode and the memory gate electrode are formed, over the upper portions thereof, with a silicide film and an insulating film formed by oxidation of the surface of the silicide film, respectively.

Abstract: On one side of a passageway for an identification subject 10 with an IC tag 7 to pass, an antenna is provided for reading information stored in the IC tag 7, and a front wave-absorbing wall 2 and a rear wave-absorbing wall 3 are provided protruding from the vicinity of the front and rear edges of the antenna 8 toward the passageway 13 such that the walls narrow the half-power angle ? of the radio wave radiated from the antenna 8 over a horizontal plane. A wave-absorbing side wall 1 is also provided on the other side of the passageway 13. With such a structure, the propagation area of the radio wave can be controlled so that the reading area of the IC tag 7 can be limited, and the influence of the reflected wave is suppressed.

Abstract: The purpose of the present invention is to provide a diabody-type bispecific antibody, which is characterized by having low immunogenicity and high infiltrating activity into tumor tissues, and by being easily mass-produced at a low cost with use of microorganisms, and by being easily altered in function by means of genetic engineering. The diabody-type bispecific antibody shows a more remarkable effect than the conventional diabody-type bispecific antibodies and chemically synthesized bispecific antibodies even in a very low concentration and in the absence of the super antigen.

Abstract: An image processing apparatus is provided for enhancing the image processing function without having to increase the circuit scale. The image processing apparatus includes an image divider, a pixel processor, and an image coupler. If the number of horizontal pixels on the width of an input image is larger than a size of a line buffer, the image divider equally divides the input image in the vertical direction so that the resulting divided area is smaller than the number of horizontal pixels on the width of the line buffer. Then, the image divider controls an input data transfer circuit so that the pixel data of the input image may be sequentially transferred to the line buffer for each of the equally divided areas. The image processor sequentially processes the pixel data of the input image temporarily stored in the line buffer and then sends out the output pixel data.