Abstract: A process of forming electrodes is simplified during modularizing of a solar battery. According to the manufacturing method and the manufacturing apparatus, a thin solar battery is manufactured at a reduced cost and with a better yield. Using a robot which includes a suction chip which can handle a semiconductor film 2 without any damage which is separated from a particular substrate 1, the semiconductor films 2 are each accurately placed through a transparent resin 3 onto a glass substrate 7 which serves as a window of a solar battery, and p-type and n-type electrodes are printed at a time on the semiconductor films 2 which are arranged. Further, since a monolithic tab electrode is soldered to connect the electrodes, the manufacturing processes of the solar battery are simplified.

Abstract: An infrared imaging device includes an infrared detector element having a pin structure which detects infrared rays 8 to 12 macrons in wavelength. The pin structure comprises a multiquantum well structure as an intrinsic layer including a plurality of Al.sub.y Ga.sub.1-y As quantum well layers sandwiched by respective Al.sub.x Ga.sub.1-x As quantum barrier layers (x>y) and a p type Al.sub.x Ga.sub.1-x As layer and an n type Al.sub.x Ga.sub.1-x As layer sandwiching the intrinsic layer. An infrared imaging device includes a plurality of picture units, each picture unit including an infrared detector element and a corresponding GaAs FET having a source region connected with the n layer of the infrared detector element on the same substrate. The picture unit and corresponding FET may be monolithically integrated on the same substrate with an n type channel in the substrate interconnecting the picture unit and the corresponding FET.

Abstract: An infrared imaging device includes an infrared detector element having a pin structure which detects infrared rays 8 to 12 microns in wavelength. The pin structure comprises a multi-quantum well structure as an intrinsic layer including a plurality of Al.sub.y Ga.sub.1-y As quantum well layers sandwiched by respective Al.sub.x Ga.sub.1-x As quantum barrier layers (x>y) and a p type Al.sub.x Ga.sub.1-x As layer and an n type Al.sub.x Ga.sub.1-x As layer sandwiching the intrinsic layer. An infrared imaging device includes a plurality of picture units, each picture unit including an infrared detector element and a corresponding GaAs FET having a source region connected with the n layer of the infrared detector element on the same substrate. The picture unit and corresponding FET may be monolithically integrated on the same substrate with an n type channel in the substrate interconnecting the picture unit and the corresponding FET.

Abstract: A p type GaAlAs layer is disposed on an n type substrate and then n type GaAlAs, GaAs and GaAlAs layers are successively grown on the p type GaAlAs layer. Zn is diffused into predetermined portions of those n type layers to a depth reaching the GaAlAs layer to form pn junctions between the original n type regions of the layers and their regions converted to the p form the n type conductivity. The pn junction formed in the GaAs layer serves as a light emitting region.