Abstract: Considering the locations of a self-vehicle and other vehicles changing from moment to moment, an image signal is chosen in relation to the location, orientation, viewing angle, and moving speed of a camera mounted on each vehicle, and information on a region to be a driver's blind spot is provided in real time by means of images and voice. When there is the other vehicles whose camera meets requirements such as the location, orientation, viewing angle, and moving speed for photographing a region to be the self-vehicle's blind spot, it is possible to provide information on the blind spot by the image picked up by the camera. However, since the other vehicle's location also changes with a lapse of time, it is not possible to keep photographing the blind spot with the same camera.

Abstract: A semiconductor laser driving circuit has a circuit protection function at low temperature and includes a voltage current converter that converts an input voltage Vin, which is determined according to a desired light brightness of the semiconductor laser to be driven, into a current. A current limiter limits an output current of the voltage current converter to a specified current value or less. An output amplifier amplifies the output current of the voltage current converter and supplies the amplified current as a drive current to the semiconductor laser. A temperature detection circuit detects a low temperature state and, in the low temperature state, decreases the specified current value of the current limiter.

Abstract: A semiconductor light emitting device includes a semiconductor light emitting portion, a front surface electrode provided on one side of the semiconductor light emitting portion, an electrically conductive substrate provided on the other side of the semiconductor light emitting portion, the electrically conductive substrate being transparent to a wavelength of light emitted from the semiconductor light emitting portion, a rear surface electrode having a pattern in ohmic contact with a first region of a back surface of the electrically conductive substrate opposite from the semiconductor light emitting portion, and a rear surface insulation layer covering a second region of the back surface of the electrically conductive substrate other than the first region, the rear surface insulation layer being transparent to the wavelength of the light emitted from the semiconductor light emitting portion.

Abstract: A method of manufacturing a semiconductor light emitting apparatus according to the invention includes: the mask layer forming step of forming two mask layers in descending order of etching rates from a side near a p-type semiconductor layer; the mask layer etching step; the semiconductor layer etching step; the side etching step of selectively etching a side surface of a mask layer having a high etching rate to form a groove portion in the p-type semiconductor layer; the insulating film forming step of forming an insulating film so as to cover the p-type semiconductor layer; the mask layer removing step; and the electrode layer forming step. A semiconductor light emitting apparatus according to the invention includes: a substrate; an n-type semiconductor layer; an active layer; a p-type semiconductor layer on which a mesa portion projecting above the active layer is formed; an insulating film which covers the mesa portion to expose an upper surface of the mesa portion; and an electrode layer.

Abstract: According to the present invention, plural Group III nitride based compound layers with different compositions are placed between an active layer and a hole supply layer for smoothly moving holes to the active layer by using Coulomb forces from polarization charges caused by the difference in composition among the Group III nitride based compound layers.

Abstract: The semiconductor device according to the present invention includes a semiconductor layer containing plural band gap change thin films in which a band gap is continuously monotonously changed in a laminating direction. Therefore, the present invention provides a semiconductor device having high reliability and low electric resistance.

Abstract: A semiconductor light emitting device includes a semiconductor light emitting portion having a first contact layer of a first conductivity, a second contact layer of a second conductivity and an active layer sandwiched between the first and second contact layers. The device further includes a transparent electrode which substantially entirely covers a surface of the second contact layer in ohmic contact with the surface of the second contact layer and is transparent to a wavelength of light emitted from the semiconductor light emitting portion, and a metal reflection film which is opposed to substantially the entire surface of the transparent electrode and electrically connected to the transparent electrode, and reflects the light emitted from the semiconductor light emitting portion and passing through the transparent electrode toward the semiconductor light emitting portion.

Abstract: In the invention, a band gap change layer in which a composition is changed in a depositing direction is arranged between two semiconductor layers having the different compositions to decrease polarization generated by depositions of the two semiconductor layers.

Abstract: A masking material 13, which includes stripe-like openings 12 parallel to the [1-100] direction of a nitride semiconductor thin film, is formed on a substrate. Nitride semiconductor thin films 11 doped with Mg are grown on the openings 12 by selective-area growth. The nitride semiconductor thin films 11 are composed of a portion 14 formed as a result of the growth in the direction perpendicular to a (0001) principal plane, and a portion 15 formed as a result of the growth of {11-2x} facets (x=0, 1, 2). The Mg concentration of the portion 15 is made lower than that of the portion 14.

Abstract: A private branch exchange comprising means, including at least an extension terminal, for connecting the extension terminal to a communication network, means for transmitting to the communication network a call including information relating to a caller number, when a transmission call is made from the extension terminal, means for sending, when a call is received from the communication network and the call includes information on a number, the call to the extension terminal corresponding to the called number, memory means for storing information on a predetermined number which is preconfirmed to function as a called number for callback, determination means for determining, when a call has been received from the extension terminal, whether or not the predetermined number is obtained, which corresponds to a caller number received from the extension terminal or a caller number corresponding to the extension number, with use of the information stored in the memory means, and means for employing, when the acquisi

Abstract: A masking material 13, which includes stripe-like openings 12 parallel to the [1-100] direction of a nitride semiconductor thin film, is formed on a substrate. Nitride semiconductor thin films 11 doped with Mg are grown on the openings 12 by selective-area growth. The nitride semiconductor thin films 11 are composed of a portion 14 formed as a result of the growth in the direction perpendicular to a (0001) principal plane, and a portion 15 formed as a result of the growth of {11-2x} facets (x=0, 1, 2). The Mg concentration of the portion 15 is made lower than that of the portion 14.

Abstract: A private branch exchange comprising means, including at least an extension terminal, for connecting the extension terminal to a communication network, means for transmitting to the communication network a call including information relating to a caller number, when a transmission call is made from the extension terminal, means for sending, when a call is received from the communication network and the call includes information on a number, the call to the extension terminal corresponding to the called number, memory means for storing information on a predetermined number which is preconfirmed to function as a called number for callback, determination means for determining, when a call has been received from the extension terminal, whether or not the predetermined number is obtained, which corresponds to a caller number received from the extension terminal or a caller number corresponding to the extension number, with use of the information stored in the memory means, and means for employing, when the acquisi

Abstract: A high-Ni austenitic stainless steel having swelling resistance, high-temperature creep strength, and phase stability under irradiation. The irradiation resistance and high-temperature strength of the high-Ni austenitic stainless steel are enhanced when it is composed of the following percentages by weight: Si, not exceeding 0.5 wt. %; Mn, not exceeding 1.0 wt. %; Cr, 13-18 wt. %; Ni, 30-50 wt. %; Mo+W=2.0-6.0 wt. %; Nb+V=0.1-0.8 wt. % (Nb/(Nb+V) ?weight ratio!=0.20-0.85 ?weight ratio!; N, 0.01-0.2 wt. %; and the residual consisting of Fe and unavoidable impurities.

Abstract: In a private branch exchange having an optimum route selecting function of selecting an optimum route by taking the destination, day of the week, time zone, permissive class of the extension terminal and the like into consideration when a call originating request from the extension terminal is generated, adequately processing dial number and outputting the same to an outgoing line so as to use the route, the route is selected by taking usage rates of the respective routes into consideration. Further, in the route selecting process, the route is selected by taking communication time (estimated value) into consideration.

Abstract: A large amount of control information is transmitted at high speed to a telephone terminal without changing the transfer capacity of a current control channel. When a call is terminated by any of the extension terminals, the extension terminal sends, for example, a lamp control signal to a extension terminal via D channel. thereafter, if a large amount of display control signals are to be transmitted to the extension terminal, after sending the display control signal to the extension line, a central controller causes the extension line to send a B channel seizing signal to the extension terminal via D channel. This causes paths of the B channel(s) to be so changed that both the controllers within the extension line and the extension terminal are accessible to the B channel(s). Subsequently, the extension line can transmit the display control signals at high speed to the extension terminal via B channel(s).

Abstract: A catalytic combustion apparatus has a cylindrical housing defining a fluid passage, and a plurality of combustion catalyst bodies arranged face to face along the fluid passage in the cylindrical housing. The catalyst bodies are loosely fired in the cylindrical housing. Each catalyst body defines numerous bores extending along the fluid passage. The cylindrical housing includes holders extending inwardly of the housing for contacting end surfaces of the catalyst bodies to prevent movement thereof along the fluid passage.

Abstract: A catalytic combustion apparatus has a cylindrical housing defining a fluid passage, and a plurality of combustion catalyst bodies arranged face to face along the fluid passage in the cylindrical housing. The catalyst bodies are loosely fitted in the cylindrical housing. Each catalyst body defines numerous bores extending along the fluid passage. The cylindrical housing includes holders extending inwardly of the housing for contacting end surfaces of the catalyst bodies to prevent movement thereof along the fluid passage.

Abstract: A gas burner having first flame openings for discharging a stable and self-combustible high-concentration gas and second flame openings for discharging a unstable and non-self-combustible low-concentration gas, with the first and second flame openings being disposed alternately with each other. The effect of stable flame formations at the first flame openings assists stabilization of flame formations at the second flame openings adjacent thereto. Consequently, the gas burner as the whole may have a high air excess ratio to reduce its NOx generation and to prevent incomplete combustion. Further, if a rectifying member is provided in the second flame opening, it becomes possible to enlarge the opening area of the second flame opening without disturbing its flame formation, whereby the burner will achieve further reduction in NOx generation and combustion noise and also improvements in its combustion load and ignition performance.

Abstract: A gas burner having first flame openings for discharging a stable and self-combustible high-concentration gas and second flame openings for discharging an unstable and non-self-combustible low-concentration gas, with the first and second flame openings being disposed alternately with each other. The effect of stable flame formations at the first flame openings assists stabilization of flame formations at the second flame openings adjacent thereto. Consequently, the gas burner as the whole may have a high air excess ratio to reduce its NOx generation and to prevent incomplete combustion. Further, if a rectifying member is provided in the second flame opening, it becomes possible to enlarge the opening area of the second flame opening without disturbing its flame formation, whereby the burner will achieve further reduction in NOx generation and combustion noise and also improvements in its combustion load and ignition performance.

Abstract: A dispersion strenghened ferritic steel having excellent ductility and toughness which has been heat treated to produce a matrix having a tempered martensitic structure composed of 0.05 to 0.25% by weight of carbon, 0.1% by weight or less of silicon , 0.1% by weight or less of manganese, 8 to 12% by weight of chromium, 0.1 to 4.0% by weight in total of molybdenum and tungsten, and 0.02% by weight or less of oxygen (exclusive of oxide particles) with the balance being iron and inevitable impurities and, homogeneously dispersed in the matrix, composite oxide particles comprising Y.sub.2 O.sub.3 and TiO.sub.2 in an amount of 0.1 to 1.0% by weight in total of Y.sub.2 O.sub.3 and TiO.sub.2 and a TiO.sub.2 to Y.sub.2 O.sub.3 molar ratio of 0.5 to 2.0.