Patents by Inventor Toshio Nonaka

Toshio Nonaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5121250
    Abstract: An element for generating second-harmonic waves of a short wavelength from a fundamental wave emitting from a semiconductor laser and the like. The element includes a substrate made of a ferroelectric crystal, a second-harmonic wave generator for generating a second-harmonic wave from a fundamental wave entered therein, and periodically arranged portions formed in a front stage region and a rear stage region of the element. The periodic portions or structures, each have pairs of parts or regions of a high optical refractive index and of a low optical refractive index so as to confine the fundamental waves in the second-harmonic wave generating portion. These regions have various kinds of material diffused or introduced therein and of a thickness. According to another example of the element, the sign of a nonlinear optical coefficient of the region is periodically reversed and the region satisfies a quasi-phase-matching condition.
    Type: Grant
    Filed: January 24, 1991
    Date of Patent: June 9, 1992
    Assignee: Oki Electric Industry Co., Ltd.
    Inventors: Keisuke Shinozaki, Toshio Nonaka
  • Patent number: 4862383
    Abstract: In an ultrasonic inspection method and apparatus for inspecting the presence or absence of a defect in an object to be inspected by receiving as an RF signal a reflection beam of an ultrasonic beam emitted from a probe to the object and displaying data of the RF signal on a display unit, a maximum value indicative of a positive peak of the RF signal is detected, a maximum absolute value indicative of a negative peak of the RF signal is detected, a computation is performed for comparing in magnitude the maximum value indicative of the positive peak with the maximum absolute value indicative of the negative peak, and a computed value is displayed on the display unit so that the presence or absence of a phase inversion of the RF signal may be judged for deciding the presence or absence of a defect in the object.
    Type: Grant
    Filed: October 16, 1986
    Date of Patent: August 29, 1989
    Assignee: Hitachi Construction Machinery Co., Ltd.
    Inventors: Chishio Koshimizu, Yasuo Hayakawa, Toshio Nonaka, Sakae Takeda
  • Patent number: 4768155
    Abstract: A supersonic flaw detecting system has a probe adapted to emit a supersonic wave towards an object to be inspected, a scanning device for causing a relative movement between the probe and the object in two orthogonal directions, a pulser-receiver adapted to supply pulses to the probe and receive the supersonic wave from the object and produce an electric signal indicative thereof, a signal processing device for converting the electric signal from the pulser-receiver into an image data signal for a C-scope display, an oscilloscope for conducting an A-scope display of the electric signal from the pulser-receiver, and a monitor T.V. having a screen for conducting the C-scope display of the image data signal from the signal processing device.
    Type: Grant
    Filed: January 21, 1986
    Date of Patent: August 30, 1988
    Assignee: Hitachi Construction Machinery Co., Ltd.
    Inventors: Yoshihiko Takishita, Toshio Nonaka, Yasuo Hayakawa
  • Patent number: 4586063
    Abstract: A semiconductor device and a method of manufacturing the same are disclosed. The device comprises a GaAs semiconductor body, a source and a drain region formed in the semiconductor body, a channel region placed between the source and drain regions, a source and a drain electrodes provided by patterning treatment onto the surfaces of the source and drain regions and making ohmic contact thereto, and a gate electrode provided onto the surface of the channel region and consisting of a W-Al alloy.
    Type: Grant
    Filed: April 2, 1984
    Date of Patent: April 29, 1986
    Assignee: Oki Electric Industry Co., Ltd.
    Inventors: Hiroshi Nakamura, Katsuzo Kaminishi, Toshio Nonaka, Toshimasa Ishida
  • Patent number: 4540446
    Abstract: A method of manufacturing a GaAs compound semiconductor device is disclosed. The method comprises steps of applying a Ge film on an n+ region for forming ohmic electrode thereon, injecting impurity ion into the Ge film with high concentration, applying metal of high melting point overall surface of the semiconductor body to an annealing treatment after final ion implantation step.
    Type: Grant
    Filed: April 20, 1984
    Date of Patent: September 10, 1985
    Assignee: OKI Electric Industry Co., Ltd.
    Inventors: Toshio Nonaka, Hiroshi Nakamura, Choho Yamagishi
  • Patent number: 4319698
    Abstract: For the purpose of automatically vending cups of cold drinks, ice being directly put into a cup, source powder or a concentrated source liquid, and cold water are required for mixture. Ice is made by an ice making machine. Cold water is prepared by cooling city water with ice made by the ice making machine. To that end, a cylinder for stocking ice formed of apertures at a portion of the peripheral wall thereof for allowing a flow of the water therethrough and a cold water tank for storing cold water around the cylinder are provided. Ice made by the ice making machine is selectively supplied into a cup for vending or into the ice storing cylinder for the cold water. The cold water is held in the cold water tank and is withdrawn through the ice storing cylinder while the same is in contact with the ice stored therein. The cold water is mixed with the source powder or the concentrated source liquid and the mixture is guided to a cup together with the ice.
    Type: Grant
    Filed: December 26, 1979
    Date of Patent: March 16, 1982
    Assignee: Kubota Ltd.
    Inventors: Muneo Tomiyama, Keiichi Mizugane, Kazunori Taniguchi, Toshio Nonaka, Hidenori Oodoi