Abstract: An image sensor array comprises an insulating substrate, a plurality of individual electrodes formed on the substrate, a plurality of blocking diodes formed on the respective individual electrodes, a plurality of photo diodes formed on the blocking diodes to form a plurality of series conections of a blocking diode and a photo diode, a plural number of common electrodes of a transparent conductor material, each of the common electrodes covering one of the photo diodes on the same individual electrodes, and a filter covering portions of the common electrodes above the photo diodes. A photo-shielding layer of metal, amorphous silicon, amorphous germanium or amorphous silicon germanium may be interposed between the blocking diode and the photo diode.

Abstract: An image sensor array comprises an insulating substrate, a plurality of individual electrodes formed on the substrate, a plurality of blocking diodes formed on the respective individual electrodes, a plurality of photo diodes formed on the blocking diodes to form a plurality of series connections of a blocking diode and a photo diode, a plural number of common electrodes of a transparent conductor material, each of the common electrodes covering one of the photo diodes on the same individual electrodes, and a filter covering portions of the common electrodes above the photo diodes. A photo-shielding layer of metal, amorphous silicon, amorphous germanium or amorphous silicon germanium may be interposed between the blocking diode and the photo diode.

Abstract: A semiconductor device fabricated by forming a layer of cured polyimide resin on a semiconductor body, forming a photoresist layer having a prescribed pattern on said cured layer, immersing in an etchant consisting of hydrazine and ethylenediamine to said cured layer through said prescribed pattern, whereby said cured layer is precisely etched according to said prescribed pattern and prescribed surfaces of said semiconductor body are exposed, forming a metal layer on the surface of said polyimide and the prescribed surfaces of said body, and selectively etching said metal layer so as to form a prescribed pattern.

Abstract: A semiconductor device fabricated by forming a layer of semicured polyimide resin on a semiconductor body, forming a photoresist layer having a prescribed pattern on said semicured layer, immersing in an etchant consisting of hydrazine and ethylenediamine to said semicured layer through said prescribed pattern, whereby said semicured layer is precisely etched according to said prescribed pattern and prescribed surfaces of said semiconductor body are exposed, curing said semicured polyimide so as to form a layer of said polyimide resin, forming a metal layer on the surface of said polyimide and the prescribed surfaces of said body, and selectively etching said metal layer so as to form a prescribed pattern.