Abstract: The method for producing a polishing composition according to the present invention includes mixing a dispersion containing silica and a solution containing a silane coupling agent having a cationic group at a concentration of 0.03% by mass or more and less than 1% by mass to obtain a dispersion containing cationically modified silica.

Abstract: There is provided a polishing composition capable of improving the polishing removal rate of silicon nitride to polish silicon oxide and silicon nitride at the same polishing removal rate and polishing silicon nitride with a small number of defects. A polishing composition contains: abrasives having a positive zeta potential; and a cyclic compound having a mother nucleus with a ring structure and two or more anionic functional groups bonded to the mother nucleus, in which the abrasives contain silica. This polishing composition is used for polishing objects to be polished containing silicon oxide and silicon nitride.

Abstract: There are provided a polishing composition capable of improving the polishing removal rate of a TEOS film, a method for manufacturing the polishing composition, and a polishing method. A polishing composition contains cationized colloidal silica chemically surface-modified with an amino silane coupling agent and an anionic surfactant, in which the pH value is larger than 3 and smaller than 6.

Abstract: To provide a polishing composition capable of polishing an object to be polished containing a silicon nitride film at a high polishing removal rate and reducing the particle residual amount on the object to be polished and a method for manufacturing the same, a polishing method, and a method for manufacturing a substrate. A polishing composition is a polishing composition containing abrasives, an anionic surfactant, and a dispersion medium, in which the anionic surfactant has at least one kind of acidic functional group selected from the group consisting of a sulfo group, a phosphate group, and a phosphonic acid group and a polyoxyalkylene group and the pH is less than 7 and which is used for polishing an object to be polished containing a silicon nitride film.

Abstract: The object of the present invention is to provide a novel polishing composition capable of polishing two or more kinds of objects to be polished at a similar speed and at a high speed. A polishing composition used for polishing an object to be polished, the polishing composition including: abrasive grains; an organic compound; and a liquid carrier, in which the number of silanol groups per unit surface area of the abrasive grains is more than 0/nm2 and equal to or less than 2.5/nm2, and the organic compound has a phosphonic acid group or a salt group thereof.

Abstract: The polishing composition according to the present invention is used to polish an object to be polished having a silicon oxide film, contains an abrasive grain, a compound having a logarithmic value (Log P) of partition coefficient of 1.0 or more, and a dispersing medium, and has a pH of less than 7.

Abstract: To provide a polishing composition capable of polishing an object to be polished containing a silicon nitride film at a high polishing removal rate and reducing the particle residual amount on the object to be polished and a method for manufacturing the same, a polishing method, and a method for manufacturing a substrate. A polishing composition is a polishing composition containing abrasives, an anionic surfactant, and a dispersion medium, in which the anionic surfactant has at least one kind of acidic functional group selected from the group consisting of a sulfo group, a phosphate group, and a phosphonic acid group and a polyoxyalkylene group and the pH is less than 7 and which is used for polishing an object to be polished containing a silicon nitride film.

Abstract: The present invention provides a polishing composition with which differences in height of a SiN film can be sufficiently removed. The present invention is a polishing composition for use in polishing a polishing object having a surface which is positively charged at a pH of less than 6, containing water, abrasive grains, and an anionic copolymer having a specific unit structure, and having a pH of less than 6, wherein the anionic copolymer has at least two acidic groups having different acidities.

Abstract: To provide a polishing composition capable of polishing objects to be polished, such as simple substance silicon, silicon compounds, and metals, at a high polishing removal rate. The polishing composition contains a polishing removal accelerator containing a compound having a ring structure configured to contain four or more nitrogen atoms, abrasives, and a liquid medium.

Abstract: The present invention provides a means for further improving a polishing speed in a polishing composition. The polishing composition includes: an abrasive grain; hydrogen peroxide; and water, wherein the abrasive grain has an average secondary particle size of 20 nm or more to 150 nm or less, a molar concentration M (mmol/Kg) of the hydrogen peroxide and a total surface area of the abrasive grain satisfy a relationship of Formula 1 below and Formula 2 below, and a pH is 10 or more to 14 or less. M<Log(S)×100?750??(Formula 1) M>0??(Formula 2) (wherein S represents a total surface area (m2) of abrasive grains present in 1 Kg of the polishing composition, and Log(S) represents a natural logarithm of S).

Abstract: The present invention provides a polishing composition with which differences in height of a SiN film can be sufficiently removed. The present invention is a polishing composition for use in polishing a polishing object having a surface which is positively charged at a pH of less than 6, containing water, abrasive grains, and an anionic copolymer having a specific unit structure, and having a pH of less than 6, wherein the anionic copolymer has at least two acidic groups having different acidities.

Abstract: Provided is a polishing composition used for polishing a semiconductor substrate having a through-silicon via structure, comprising an oxidizing agent having a standard electrode potential of 350 mV or more and 740 mV or less, a silicon polishing accelerating agent, a through-silicon via material polishing speed increasing agent, a silicon contamination preventing agent, and water.

Abstract: Provided is a polishing composition containing abrasive grains, at least one type of alcohol compound selected from the group consisting of aliphatic alcohols with 2 to 6 carbon atoms and glycol ethers with 3 to 10 carbon atoms, at least one type of basic compound selected from the group consisting of quaternary ammonium salts and alkali metal salts, and water. The average primary particle diameter of the abrasive grains is 5 to 50 nm. The content of the alcohol compound in the polishing composition is 0.01 to 1% by mass. The polishing composition is mainly used in an application of polishing a semiconductor substrate surface.

Abstract: Provided is a polishing composition used for polishing a semiconductor substrate having a through-silicon via structure, comprising an oxidizing agent having a standard electrode potential of 350 mV or more and 740 mV or less, a silicon polishing accelerating agent, a through-silicon via material polishing speed increasing agent, a silicon contamination preventing agent, and water.

Abstract: Provided is a polishing composition containing abrasive grains, at least one type of alcohol compound selected from the group consisting of aliphatic alcohols with 2 to 6 carbon atoms and glycol ethers with 3 to 10 carbon atoms, at least one type of basic compound selected from the group consisting of quaternary ammonium salts and alkali metal salts, and water. The average primary particle diameter of the abrasive grains is 5 to 50 nm. The content of the alcohol compound in the polishing composition is 0.01 to 1% by mass. The polishing composition is mainly used in an application of polishing a semiconductor substrate surface.

Abstract: A method of the present invention includes polishing a wafer having an exposed copper or copper alloy surface and an exposed silicon surface by using a polishing composition containing 0.02 to 0.6% by mass of hydrogen peroxide, preferably 0.05 to 0.2% by mass thereof. The polishing composition preferably further contains at least one of a complexing agent, an inorganic electrolyte, and abrasive grains such as colloidal silica. The polishing composition has a pH of preferably 9 or more, more preferably 10 or more.