Abstract: According to the invention a method for making a semiconductor device comprising a step of preparing a semiconductor device having at least one semiconductor element formed in a semiconductor substrate, a plurality of electrode pads electrically connected to said semiconductor element and a passivation film provided on the surface thereof, a step of forming a leading layer on the surface of said electrode pads and a step of forming at least one bump electrode on the surface of said leading layer is provided and in this invention, since the prefabricated semiconductor device which may be sold by a standard supplier is used as the starting material and several steps for improving such a semiconductor device are applied thereto, the method for making a semiconductor device in which the whole manufacturing process thereof is simplified and the manufacturing cost thereof is remarkably reduced and moreover in which the developing cost thereof is greatly reduced development thereof can be speeded up, can be obtained

Abstract: A semiconductor element mounted on a substrate is sealed with a silicone gel which has a complex modulus of elasticity such that breakage of solder bumps due to thermal fatique occurs preferentially by shear stress thereto due to a difference between thermal expansion coefficients of the semiconductor element and the substrate, not by tension thereto due to thermal expansion of the silicone gel between the semiconductor element and the substrate.