Abstract: A continuously variable transmission of an automotive vehicle has a start assist device, a forward-reverse changeover device, and a V-belt type transmission. The changeover device has an input shaft for receiving power from the start assist device. The V-belt type transmission has a drive shaft connected to a drive pulley. The input shaft and the drive shaft are aligned along a common longitudinal central axis. A fluid passage arrangement for the transmission includes a hydraulic fluid passage for a chamber of the drive pulley, which passage includes mutually communicating axial holes formed in the input shaft and the drive shaft. One of the axial holes communicates with a hydraulic fluid supply, while the other axial hole communicates with the chamber. The fluid passage arrangement further has lubricating fluid passages for the transmission and the changeover device.

Abstract: Catalysts for hydrodesulfurization and hydrodenitrogenation of hydrocarbon oils are provided which have high catalytic activity, excellent productivity and low pollution. The catalysts are made from an alumina carrier substance, at least one active metal element selected from the Group VI metals in the periodic table, at least one active metal element chosen from the Group VIII metals in the periodic table, phosphoric acid, and an additive agent. The additive agent is at least one substance selected from dihydric or trihydric alcohols having 2-10 carbon atoms per one molecule, ethers of the alcohols, monosaccharides, disaccharides, and polysaccharides. A method for preparing the catalysts is also provided and includes impregnating the alumina carrier substance with a solution mixed with a certain amount of the active metal elements, phosphoric acid and the additive agent, and drying the impregnated carrier substance at a temperature of less than 200.degree. C.

Abstract: A solenoid valve is installed between a high-pressure side leading to a compressor of a fuel-injection pump and a low-pressure side to adjust the fluidic connection therebetween. This valve comprises a valve body, an armature, a solenoid which moves the armature, and a return spring. In the solenoid valve, a passage connecting an armature chamber and a balance chamber is formed around the edge of the opposite side of the armature, a rising-pressure preventing passage is provided to prevent an increase in pressure in the armature chamber, and compensation mechanism is provided in the junction area between the different members which accommodate the valve body, to thereby absorb a gap or misalignment between the sliding holes of the different members.

Abstract: In an electron beam lithography method which irradiates a sample with an electron beam to draw a desired pattern on the sample, figure data representing the shape of an elemental figure, placement data representing placement information of the figure data, and dose data representing dose for each of areas which are obtained by dividing a drawing area which are smaller than the broadening of backscattering of an electron beam are independently stored in a memory as drawing data. On the basis of the drawing data, the figure data is divided into unit figures each of which has a predetermined shape and is smaller than a predetermined size. A represented point of each unit figure is calculated, a dose of an electron beam is obtained from the data set for an area in which the represented point is present, and the quantity of radiation is determined as dose for the unit figure.

Abstract: Separation process of gaseous impurities from hydrogen gas by the known pressure swing adsorption method uses a holding column of the feed-in/feed-out sequence retaining type and at least three adsorption columns containing adsorbents. Each adsorption column is pressurized and depressurized in cycle to repeat adsorption and desorption, during which the holding column is used as an intermediate gas reservoir so that the efficiency of the separation of the impurity can be improved. In this invention, at least one of the following structures is used as the holding column:j) at least one row of spaces divided by partition walls and arranged in series;k) at least one hollow body; andl) at least one row of divided compartments arranged in series.

Abstract: A process for obtaining highly-purified gas by selectively separating at least one gaseous impurity from a gaseous mixture by the known pressure swing adsorption method uses a holding column of the feed-in/feed-out sequence retaining type and at least three adsorption columns containing adsorbents. Each adsorption column is pressurized and depressurized in cycle to repeat adsorption and desorption steps. During this, the holding column is used as an intermediate gas reservoir to improve the efficiency of the separation. In this invention, the capacity of the holding column is insufficient to hold the whole amount of purge gas.

Abstract: In a bipolar transistor, having a micronized structure for a high-speed LSI, which is fabricated by a self-alignment technology, a barrier insulating film is buried in a portion around an emitter layer so as to be deeper than a junction level between an active base layer and a collector layer. When a polysilicon film pattern which defines an active base region and serves as a portion of a base electrode is formed on a wafer surface, a surface portion of a photoresist serving as an etching mask is converted to a carbonized layer by ion implantation. When a micronized emitter layer is formed by a polysilicon-emitter technology, ion implantation is performed before deposition of the polysilicon film or an impurity is doped in the polysilicon film simultaneously with deposition, and rapid thermal annealing is performed so as to activate the doped impurity.

Abstract: In the method of manufacturing a semiconductor device, a buffer oxide film, an oxidation-resistant film and a first poly-Si film containing a p-type impurity are successively formed to form a laminate structure on the n-type collector region, followed by forming a protective oxide film by CVD. Then, an opening portion reaching the oxidation-resistant film is formed, followed by forming a second protective insulation film to cover the surface of the first poly-Si film exposed at the side wall of the opening portion. The oxidation-resistant film is excessively etched using the protective insulation films as an etching mask so as to expose the buffer oxide film and to form a bore below the first poly-Si film. The exposed buffer oxide film is removed, followed by filling the bore with a second poly-Si film. Then, a heat treatment is performed under an oxidative atmosphere to form a thermal oxide film covering the surface of the second poly-Si film.

Abstract: A variable capacity compressor comprises a control element for determining the timing of start of compression of refrigerant gas. Control pressure which acts on the control element to displace same between the minimum capacity position and the maximum capacity position is created in a high-pressure chamber by introducing discharge pressure thereinto. An electromagnetic valve opens and closes a passageway which commincates between the high-pressure chamber and a suction chamber by a pulse signal supplied from an ECU to control an amount of refrigerant gas leaking from the former into the latter to thereby control the level of the control pressure. The ECU makes the width of at least a first pulse or at least a first pulse base of the pulse signal wider than that of the following pulses or pulse bases, when the control element should start to be displaced between the minimum capacity position and the maximum capacity position.

Abstract: A catalyst for oxidizing a carbon-containing compound comprising a composite oxide powder composed of 4 to 19% by weight of silica, 3 to 10% by weight of boria, and the balance alumina, and palladium in an amount of 3 to 100 g per 1 liter of the powder carried on the composite powder, and a method for producing such a catalyst are described. The composite oxide is thermally stable and prevents reduction of palladium oxide, and the catalyst can be used for an extended period high temperatures.

Abstract: A toilet device with a system for inspecting the health condition of the toilet user includes a toilet having a bowl surface with a urine reservoir for holding a urine sample, a box having at least a water tank disposed rearwardly and upwardly of the toilet, the box having an outlet opening in a bottom thereof, a slider for holding a urine test paper piece, the slider being movable from within the box toward the urine reservoir to immerse the urine test paper piece in the urine sample in the urine reservoir, a urine analyzing device disposed in the box, for analyzing constituents of the urine sample attached to the urine test paper piece, a lifting and lowering mechanism for reciprocally lifting and lowering the slider through the outlet opening along a substantially vertical inclined path between the urine analyzing device and the urine reservoir, and a display panel for controlling the lifting and lowering mechanism and the urine analyzing device and for displaying results of a urine analysis effected by th

Abstract: A high-temperature combustion grade catalyst carrier usable fully satisfactorily even at 1,400.degree. C. is a composite oxide consisting of silicon dioxide, boron oxide, and alumina, with a composition of 4 to 19% by weight of silicon dioxide, 3 to 10% by weight of boron oxide, and the balance to make up 100% by weight of alumina and morphologically a finely divided porous substance having a specific surface area of not less than 10 m.sup.2 /g.

Abstract: In a bipolar transistor, having a micronized structure for a high-speed LSI, which is fabricated by a self-alignment technology, a barrier insulating film is buried in a portion around an emitter layer so as to be deeper than a junction level between an active base layer and a collector layer. When a polysilicon film pattern which defines an active base region and serves as a portion of a base electrode is formed on a wafer surface, a surface portion of a photoresist serving as an etching mask is converted to a carbonized layer by ion implantation. When a micronized emitter layer is formed by a polysilicon-emitter technology, ion implantation is performed before deposition of the polysilicon film or an impurity is doped in the polysilicon film simultaneously with deposition, and rapid thermal annealing is performed so as to activate the doped impurity.

Abstract: A variable capacity vane compressor has a first oil sump formed in a bottom of a discharge pressure chamber arranged at one side of a cylinder close to one side block, and a second oil sump formed in a bottom of a suction chamber arranged at another side of the cylinder close to the other side block. An oil passageway communicates between the first oil sump and the second oil sump. A control element is arranged in the other side block for rotation about its own axis in opposite directions to thereby vary the compression starting timing. A pressure chamber acts to apply control pressure created from discharge pressure from the cylinder to the control element for causing rotation of the control element. A seal member is fitted on the control element such that part of the seal member is located in the pressure chamber. A high pressure-introducing passageway is formed in the other side block and communicates with the second oil sump.

Abstract: An output shaft is supported by means of a ball bearing at one end, a radial needle bearing and a thrust bearing. The ball bearing is arranged for supporting the output shaft against most part of radial load. On the other hand, the trust bearing is arranged for supporting the output shaft against the thrusting force which is exerted on the output shaft while the engine driving torque is transferred therethrough. Such construction reduces radial and thrusting stress to be exerted on the needle bearing. Therefore, the radial needle bearing to be used in the shown construction is required substantially small load capacity and thus can be satisfactorily small for allowing the transaxle unit to be designed compact.

Abstract: A variable capacity vane compressor has a cylinder including a plurality of vanes slidably fitted in respective vane slits formed in a rotor thereof. Vane back pressure chambers are defined within the vane slits by respective ones of the vanes. A control element is rotatably arranged in the cylinder for varying the compression starting timing and hence the capacity of the compressor. Back pressure compensation holes are formed through the control element and communicating with a high pressure zone having high pressure of the compressor. The back pressure compensation holes are communicatable with each of the vane back pressure chambers for introducing the high pressure within the high pressure zone into the each vane back pressure chamber when the control element is in a first position wherein the compression starting timing is most retarded.

Abstract: A bipolar-type semiconductor device includes a semiconductor substrate on which a collector layer of a first conductivity type, a multilayered structure having a first insulating layer, a first semiconductor layer for connecting a base region, containing an impurity of a second conductivity type, and a second insulating layer, which are sequentially stacked on the semiconductor substrate, in which a first opening is formed in the first semiconductor layer and the second insulating layer, and a second opening having a smaller width than that of the first opening is formed in a position of the first insulating layer corresponding to the bottom portion of the first opening, a second semiconductor layer of the first conductivity type constituting a collector or emitter region formed in the second opening on the impurity-doped layer, a third semiconductor layer of the second conductivity type formed in the first opening, in which a first portion on the second semiconductor layer constitutes a base region, and a se

Abstract: A vane compressor has a communication passageway extending between a discharge pressure chamber and vane back pressure chambers. A valve is formed of a ball received within a ball-receiving bore and displaceable for opening and closing the communication passageway depending upon discharge pressure, a coiled spring urging the ball toward a valve opening position, and a stopper for stopping the ball in the valve opening position. The ball-receiving bore has an axial length smaller than an inner diameter thereof such that part of the ball is projected from the ball-receiving bore into the discharge pressure chamber when the ball is in the valve opening position.

Abstract: A new catalyst, which is Ni-Mo metal loaded on zeolite-alumina carrier, provides efficient hydrotreatment of solvent for coal liquefaction and cracking of high boiling fractions, especially high boiling n-paraffins, whereby undesired accumulation of n-paraffins can be prevented and liquefaction operations can be stably performed over long periods of time.

Abstract: Disclosed is a catalyst for hydrotreating a coal liquefaction and circulation solvent, in which .gamma.-alumina carrier carries at least one metal of Group VI of the Periodic Table in an amount of from 15 to 15% by weight as the oxide thereof and at least one metal of Group VIII of the same Table in an amount of from 3 to 10% by weight as the oxide thereof and the pore distribution as measured by mercury pressure porosimetry satisfies the conditions that the pores having a diameter of from 40 to 600 .ANG. have a mean diameter of from 9 to 150 .ANG. and the capacty of the pores having a diameter falling within the range of the mean diametr plus/minus 10 .ANG. is 65% or more of the capacity of the pores having a diameter of from 40 to 600 .ANG.. The catalyst is highly active for both hydrogenation and denitrogenation of coal-liquefying solvents.