Patents by Inventor Toshio Yumiyama
Toshio Yumiyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230140499Abstract: An ion implantation method includes generating a first scan beam, based on a first scan signal, measuring a beam current of the first scan beam by using a beam measurement device at a plurality of measurement positions, calculating a beam current matrix, based on a time waveform of the beam current measured by the beam measurement device and a time waveform of the scan command values determined in the first scan signal, calculating a first beam current density distribution of the first scan beam in a predetermined direction by performing time integration on the measured beam current, correcting a value of each component of the beam current matrix, based on the first beam current density distribution, and generating a second scan signal for realizing a target beam current density distribution in the predetermined direction, based on the corrected beam current matrix.Type: ApplicationFiled: October 26, 2022Publication date: May 4, 2023Inventors: Kazuhisa Ishibashi, Toshio Yumiyama
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Patent number: 10217607Abstract: An ion implantation apparatus includes a beam scanner that provides a reciprocating beam scan in a beam scan direction in accordance with a scan waveform, a mechanical scanner that causes a wafer to reciprocate in a mechanical scan direction, and a control device that controls the beam scanner and the mechanical scanner to realize a target two-dimensional dose amount distribution on a surface of the wafer. The control device includes a scan frequency adjusting unit that determines a frequency of the scan waveform in accordance with the target two-dimensional dose amount distribution, and a beam scanner driving unit that drives the beam scanner by using the scan waveform having the frequency determined by the scan frequency adjusting unit.Type: GrantFiled: September 5, 2017Date of Patent: February 26, 2019Assignee: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.Inventors: Kazuhisa Ishibashi, Shiro Ninomiya, Akihiro Ochi, Toshio Yumiyama
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Publication number: 20180068829Abstract: An ion implantation apparatus includes a beam scanner that provides a reciprocating beam scan in a beam scan direction in accordance with a scan waveform, a mechanical scanner that causes a wafer to reciprocate in a mechanical scan direction, and a control device that controls the beam scanner and the mechanical scanner to realize a target two-dimensional dose amount distribution on a surface of the wafer. The control device includes a scan frequency adjusting unit that determines a frequency of the scan waveform in accordance with the target two-dimensional dose amount distribution, and a beam scanner driving unit that drives the beam scanner by using the scan waveform having the frequency determined by the scan frequency adjusting unit.Type: ApplicationFiled: September 5, 2017Publication date: March 8, 2018Inventors: Kazuhisa Ishibashi, Shiro Ninomiya, Akihiro Ochi, Toshio Yumiyama
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Patent number: 9564289Abstract: An ion implanter includes a high-voltage power supply, a control unit that generates a command signal controlling an output voltage of the high-voltage power supply, an electrode unit to which the output voltage is applied, and a measurement unit that measures an actual voltage applied to the electrode unit. The control unit includes a first generation section that generates a first command signal for allowing the high-voltage power supply to output a target voltage, a second generation section that generates a second command signal for complementing the first command signal so that the actual voltage measured by the measurement unit becomes or close to the target voltage, and a command section that brings to the high-voltage power supply a synthetics command signal which is produced by synthesizing the first command signal and the second command signal.Type: GrantFiled: July 7, 2015Date of Patent: February 7, 2017Assignee: Sumitomo Heavy Industries Ion Technology Co., Ltd.Inventors: Tadanobu Kagawa, Toshio Yumiyama, Takeshi Kurose
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Patent number: 9379030Abstract: Provided is an ion implantation method of transporting ions generated by an ion source to a wafer and implanting the ions into the wafer by irradiating an ion beam on the wafer, including, during the ion implantation into the wafer, using a plurality of detection units which can detect an event having a possibility of discharge and determining a state of the ion beam based on existence of detected event having a possibility of discharge and a degree of influence of the event on the ion beam.Type: GrantFiled: August 29, 2013Date of Patent: June 28, 2016Assignee: Sumitomo Heavy Industries Ion Technology Co., Ltd.Inventors: Shiro Ninomiya, Tadanobu Kagawa, Toshio Yumiyama, Akira Funai, Takashi Kuroda
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Patent number: 9305784Abstract: On a plane of a semiconductor wafer, two types of in-plane regions comprising full-width non-ion-implantation regions and partial ion implantation regions, which are alternately arranged one or more times in a direction orthogonal to a scanning direction of an ion beam are created. During the creation of the partial ion implantation regions, reciprocating scanning using the ion beam can be repeated until the target dose can be satisfied while performing or stopping ion beam radiation onto the semiconductor wafer in a state in which the semiconductor wafer can be fixed. During the creation of the full-width non-ion-implantation regions, the semiconductor wafer can be moved without performing the ion beam radiation onto the semiconductor wafer. Then, by repeating fixing and movement of the semiconductor wafer plural times, ion implantation regions and non-ion-implantation regions are created in desired regions of the semiconductor wafer.Type: GrantFiled: January 23, 2013Date of Patent: April 5, 2016Assignee: Sen CorporationInventors: Shiro Ninomiya, Yasuharu Okamoto, Toshio Yumiyama, Akihiro Ochi
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Publication number: 20160013014Abstract: An ion implanter includes a high-voltage power supply, a control unit that generates a command signal controlling an output voltage of the high-voltage power supply, an electrode unit to which the output voltage is applied, and a measurement unit that measures an actual voltage applied to the electrode unit. The control unit includes a first generation section that generates a first command signal for allowing the high-voltage power supply to output a target voltage, a second generation section that generates a second command signal for complementing the first command signal so that the actual voltage measured by the measurement unit becomes or close to the target voltage, and a command section that brings to the high-voltage power supply a synthetics command signal which is produced by synthesizing the first command signal and the second command signal.Type: ApplicationFiled: July 7, 2015Publication date: January 14, 2016Inventors: Tadanobu Kagawa, Toshio Yumiyama, Takeshi Kurose
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Patent number: 8772741Abstract: An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to a beam scanning direction, and implanting ions into the wafer. The wafer is divided into a plurality of implantation regions, a beam scanning speed in the beam scanning direction is set to be varied for each of the implantation regions, an ion implantation amount distribution for each of the implantation regions is controlled by changing and controlling the beam scanning speed, and the ion implantation amount for each of the implantation regions is controlled and a beam scanning frequency and a beam scanning amplitude in the control of the beam scanning speed for each of the implantation regions is made to be constant by setting a wafer mechanical scanning speed and controlling the wafer mechanical scanning speed for each of the implantation regions.Type: GrantFiled: March 28, 2012Date of Patent: July 8, 2014Assignee: SEN CorporationInventors: Shiro Ninomiya, Akihiro Ochi, Yasuhiko Kimura, Yasuharu Okamoto, Toshio Yumiyama
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Patent number: 8735855Abstract: An ion beam irradiation method comprises calculating a scan voltage correction function with the maximum beam scan width depending on the measurement result of a beam current measurement device, calculating each of more than one scan voltage correction functions corresponding to each of scheduled beam scan widths depending on the calculated scan voltage correction functions while satisfying dose uniformity in the horizontal direction, measuring a mechanical Y-scan position during the ion implantation, changing the scan voltage correction function as a function of the measured mechanical Y-scan position so that the beam scan area becomes a D-shaped multistage beam scan area corresponding to an outer periphery of a half of the wafer to thereby reduce the beam scan width, and changing a mechanical Y-scan speed depending on the change of the measurement result of a side cup current measurement device to thereby keep the dose uniformity in the vertical direction.Type: GrantFiled: June 7, 2011Date of Patent: May 27, 2014Assignee: SEN CorporationInventors: Shiro Ninomiya, Toshio Yumiyama, Yasuhiko Kimura, Tetsuya Kudo, Akihiro Ochi
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Patent number: 8692216Abstract: A vertical profile, a horizontal profile, and an integrated current value of an ion beam are measured by a plurality of stationary beam measuring instruments and a movable or stationary beam measuring device. At a beam current adjustment stage before ion implantation, a control device simultaneously performs at least one of adjustment of a beam current to a preset value of the beam current, adjustment of a horizontal beam size that is necessary to secure uniformity of the horizontal ion beam density, and adjustment of a vertical beam size that is necessary to secure the uniformity of the vertical ion implantation distribution on the basis of a measurement value of the stationary beam measuring instruments and the movable or stationary beam measuring device.Type: GrantFiled: March 15, 2013Date of Patent: April 8, 2014Assignee: Sen CorporationInventors: Hiroyuki Kariya, Masaki Ishikawa, Yoshiaki Inda, Takeshi Kurose, Takanori Yagita, Toshio Yumiyama
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Publication number: 20140065737Abstract: Provided is an ion implantation method of transporting ions generated by an ion source to a wafer and implanting the ions into the wafer by irradiating an ion beam on the wafer, including, during the ion implantation into the wafer, using a plurality of detection units which can detect an event having a possibility of discharge and determining a state of the ion beam based on existence of detected event having a possibility of discharge and a degree of influence of the event on the ion beam.Type: ApplicationFiled: August 29, 2013Publication date: March 6, 2014Applicant: SEN CORPORATIONInventors: Shiro Ninomiya, Tadanobu Kagawa, Toshio Yumiyama, Akira Funai, Takashi Kuroda
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Publication number: 20130256566Abstract: A vertical profile, a horizontal profile, and an integrated current value of an ion beam are measured by a plurality of stationary beam measuring instruments and a movable or stationary beam measuring device. At a beam current adjustment stage before ion implantation, a control device simultaneously performs at least one of adjustment of a beam current to a preset value of the beam current, adjustment of a horizontal beam size that is necessary to secure uniformity of the horizontal ion beam density, and adjustment of a vertical beam size that is necessary to secure the uniformity of the vertical ion implantation distribution on the basis of a measurement value of the stationary beam measuring instruments and the movable or stationary beam measuring device.Type: ApplicationFiled: March 15, 2013Publication date: October 3, 2013Applicant: SEN CORPORATIONInventors: Hiroyuki KARIYA, Masaki Ishikawa, Yoshiaki Inda, Takeshi Kurose, Takanori Yagita, Toshio Yumiyama
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Publication number: 20120252194Abstract: An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to a beam scanning direction, and implanting ions into the wafer. The wafer is divided into a plurality of implantation regions, a beam scanning speed in the beam scanning direction is set to be varied for each of the implantation regions, an ion implantation amount distribution for each of the implantation regions is controlled by changing and controlling the beam scanning speed, and the ion implantation amount for each of the implantation regions is controlled and a beam scanning frequency and a beam scanning amplitude in the control of the beam scanning speed for each of the implantation regions is made to be constant by setting a wafer mechanical scanning speed and controlling the wafer mechanical scanning speed for each of the implantation regions.Type: ApplicationFiled: March 28, 2012Publication date: October 4, 2012Applicant: SEN CORPORATIONInventors: Shiro NINOMIYA, Akihiro Ochi, Yasuhiko Kimura, Yasuharu Okamoto, Toshio Yumiyama
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Publication number: 20110297842Abstract: An ion beam irradiation method comprises calculating a scan voltage correction function with the maximum beam scan width depending on the measurement result of a beam current measurement device, calculating each of more than one scan voltage correction functions corresponding to each of scheduled beam scan widths depending on the calculated scan voltage correction functions while satisfying dose uniformity in the horizontal direction, measuring a mechanical Y-scan position during the ion implantation, changing the scan voltage correction function as a function of the measured mechanical Y-scan position so that the beam scan area becomes a D-shaped multistage beam scan area corresponding to an outer periphery of a half of the wafer to thereby reduce the beam scan width, and changing a mechanical Y-scan speed depending on the change of the measurement result of a side cup current measurement device to thereby keep the dose uniformity in the vertical direction.Type: ApplicationFiled: June 7, 2011Publication date: December 8, 2011Applicant: SEN CorporationInventors: Shiro NINOMIYA, Toshio Yumiyama, Yasuhiko Kimura, Tetsuya Kudo, Akihiro Ochi
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Patent number: 7851772Abstract: An ion implantation apparatus according to the invention includes a park electrode as a deflecting apparatus arranged at a section of a beam line from an outlet of a mass analysis magnet apparatus to a front side of a mass analysis slit for deflecting an ion beam in a predetermined direction of being deviated from a beam trajectory line by an operation of an electric field. When the ion beam does not satisfy a desired condition, a park voltage is applied to the park electrode, thereby, the ion beam is brought into an evacuated state by being deflected from the beam trajectory line. As a result, the ion beam cannot pass through the mass analysis slit, and therefore, the ion beam which does not arrive at a wafer to prevent the ion beam which does not satisfy the condition from being irradiated to the wafer.Type: GrantFiled: April 10, 2008Date of Patent: December 14, 2010Assignee: Sen Corporation an Shi and Axcelis CompanyInventors: Mitsukuni Tsukihara, Takanori Yagita, Hiroshi Sogabe, Toshio Yumiyama, Mitsuaki Kabasawa
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Publication number: 20080251713Abstract: An ion implantation apparatus according to the invention includes a park electrode as a deflecting apparatus arranged at a section of a beam line from an outlet of a mass analysis magnet apparatus to a front side of a mass analysis slit for deflecting an ion beam in a predetermined direction of being deviated from a beam trajectory line by an operation of an electric field. When the ion beam does not satisfy a desired condition, a park voltage is applied to the park electrode, thereby, the ion beam is brought into an evacuated state by being deflected from the beam trajectory line. As a result, the ion beam cannot pass through the mass analysis slit, and therefore, the ion beam which does not arrive at a wafer to prevent the ion beam which does not satisfy the condition from being irradiated to the wafer.Type: ApplicationFiled: April 10, 2008Publication date: October 16, 2008Applicant: SEN Corporation, an SHI and Axcelis CompanyInventors: Mitsukuni Tsukihara, Takanori Yagita, Hiroshi Sogabe, Toshio Yumiyama, Mitsuaki Kabasawa