Abstract: Provided is a soft X-ray static electricity removal apparatus that has achieved an increase in the amount of ionized air discharged, with a simple structure. A soft X-ray static electricity removal apparatus (1) includes a soft X-ray generation device (90), a container (10), a soft X-ray shielding sheet (20), and an insulating layer (50). The soft X-ray generation device generates soft X-rays (92). The container (10) has an outlet (12) from which ionized air (100) that has been ionized with the soft X-rays flows out. The soft X-ray shielding sheet (20) is used at the outlet of the container and includes a first outer sheet (30), an interlayer sheet (34), and a second outer sheet (40) which are formed of a material opaque to the soft X-rays.

Abstract: A device that can accurately detect clogging of a filter and that has a simple structure is provided. A device for measuring clogging of a filter in an air conditioner (2) having a blower (30) that blows gas (40), (42) through a duct (10) and a filter (20) that is provided in the duct (10) and filters dust floating in the gas, comprises a device (26) for measuring a sound pressure that is provided in the duct (10), a data processor (70) that extracts data on the sound pressure at a specific frequency from the data on the sound pressure that have been measured by means of the device (26) for measuring a sound pressure, and an estimating device (70) that estimates clogging of the filter based on the data on the sound pressure at the specific frequency that have been extracted by means of the data processor (70).

Abstract: Provided is a soft X-ray static electricity removal apparatus that has achieved an increase in the amount of ionized air discharged, with a simple structure. A soft X-ray static electricity removal apparatus (1) includes a soft X-ray generation device (90), a container (10), a soft X-ray shielding sheet (20), and an insulating layer (50). The soft X-ray generation device generates soft X-rays (92). The container (10) has an outlet (12) from which ionized air (100) that has been ionized with the soft X-rays flows out. The soft X-ray shielding sheet (20) is used at the outlet of the container and includes a first outer sheet (30), an interlayer sheet (34), and a second outer sheet (40) which are formed of a material opaque to the soft X-rays.

Abstract: A device that can accurately detect clogging of a filter and that has a simple structure is provided. A device for measuring clogging of a filter in an air conditioner (2) having a blower (30) that blows gas (40), (42) through a duct (10) and a filter (20) that is provided in the duct (10) and filters dust floating in the gas, comprises a device (26) for measuring a sound pressure that is provided in the duct (10), a data processor (70) that extracts data on the sound pressure at a specific frequency from the data on the sound pressure that have been measured by means of the device (26) for measuring a sound pressure, and an estimating device (70) that estimates clogging of the filter based on the data on the sound pressure at the specific frequency that have been extracted by means of the data processor (70).

Abstract: An object of the present invention is to provide: an algae water concentration system that efficiently concentrates algae water in a culture pond into algae water containing algae having a desired size, with a simple structure and at low cost; and a method for operating the same.

Abstract: An apparatus for manufacturing semiconductors is provided by which adhesion of moisture to a wafer in an EFEM is easily prevented. The apparatus 1 for manufacturing the semiconductors comprises processing equipment 30 that processes a wafer 90, a FOUP 40 that supplies the wafer 90 and that houses the wafer 90 that has been processed, an EFEM 10 that transfers the wafer 90 between the FOUP 40 and the processing equipment 30, a fan and filter unit 20 that sends an airflow 72 from above to the EFEM 10, an ultrasonic oscillator 52 that generates high-frequency power, and a vibrator 54 that generates ultrasonic waves 80 by using the high-frequency power that is generated by the ultrasonic oscillator 52 and that applies the ultrasonic waves 80 to the wafer 90 that is transported in the EFEM 10 and that has been processed.

Abstract: An object of the present invention is to provide: an algae water concentration system that efficiently concentrates algae water in a culture pond into algae water containing algae having a desired size, with a simple structure and at low cost; and a method for operating the same.

Abstract: A manufacturing apparatus for a semiconductor device comprises: a clean room for installing a plurality of semiconductor manufacturing and processing apparatuses; an external air cleaning device connected to a supply port of the clean room for supplying a cleaned-up outside air into the clean room; a common air duct section installed in the clean room; a first air cleaning and ventilating means connected to said common air duct section for cleaning and ventilating a part of the cleaned-up outside air to the common air duct section; individual air duct section branched off from the common air duct section and connected to each of said semiconductor manufacturing and processing apparatuses; and a second air cleaning and ventilating means interposed between the individual air duct section and each of the semiconductor manufacturing and processing apparatuses for cleaning and ventilating the air to be supplied to each of the semiconductor manufacturing and processing apparatuses.

Abstract: A manufacturing apparatus for a semiconductor device comprises: a clean room for installing a plurality of semiconductor manufacturing and processing apparatuses; an external air cleaning device connected to a supply port of the clean room for supplying a cleaned-up outside air into the clean room; a common air duct section installed in the clean room; a first air cleaning and ventilating means connected to said common air duct section for cleaning and ventilating a part of the cleaned-up outside air to the common air duct section; individual air duct section branched off from the common air duct section and connected to each of said semiconductor manufacturing and processing apparatuses; and a second air cleaning and ventilating means interposed between the individual air duct section and each of the semiconductor manufacturing and processing apparatuses for cleaning and ventilating the air to be supplied to each of the semiconductor manufacturing and processing apparatuses.

Abstract: A manufacturing apparatus for a semiconductor device comprises: a clean room for installing a plurality of semiconductor manufacturing and processing apparatuses; an external air cleaning device connected to a supply port of the clean room for supplying a cleaned-up outside air into the clean room; a common air duct section installed in the clean room; a first air cleaning and ventilating means connected to said common air duct section for cleaning and ventilating a part of the cleaned-up outside air to the common air duct section; individual air duct section branched off from the common air duct section and connected to each of said semiconductor manufacturing and processing apparatuses; and a second air cleaning and ventilating means interposed between the individual air duct section and each of the semiconductor manufacturing and processing apparatuses for cleaning and ventilating the air to be supplied to each of the semiconductor manufacturing and processing apparatuses.

Abstract: A manufacturing apparatus for a semiconductor device comprises: a clean room for installing a plurality of semiconductor manufacturing and processing apparatuses; an external air cleaning device connected to a supply port of the clean room for supplying a cleaned-up outside air into the clean room; a common air duct section installed in the clean room; a first air cleaning and ventilating means connected to said common air duct section for cleaning and ventilating a part of the cleaned-up outside air to the common air duct section; individual air duct section branched off from the common air duct section and connected to each of said semiconductor manufacturing and processing apparatuses; and a second air cleaning and ventilating means interposed between the individual air duct section and each of the semiconductor manufacturing and processing apparatuses for cleaning and ventilating the air to be supplied to each of the semiconductor manufacturing and processing apparatuses.

Abstract: The present invention provides a method for plasma control, in which an electric field is generated in the direction perpendicular to the surface of an object to be processed in plasma atmosphere generated in a processing chamber and another electric field is generated in the direction parallel to the surface, and the direction of ion or electron in plasma atmosphere is controlled by controlling the composite electric field composed of both the electric fields. The invention provides also an apparatus for plasma control provided with a perpendicular electric field generating means for generating an electric field in the direction perpendicular to the surface of the object, and a parallel electric field generating means for generating an electric field in the direction parallel to the surface of the object.

Abstract: A subscriber of a home doctor center carries a physical condition-monitoring device. Physical condition data measured by the device is transmitted to a personal computer in the subscriber's residence, and then transmitted therefrom to the center via a contact path. Blood collected to the subscriber is sent to the center. The center analyzes the physical condition data and tests the received blood with an automatic test system. Based on analytic results of the physical condition data and results of blood tests, initial diagnosis of the subscriber is performed, and the subscriber is informed of the result of the initial diagnosis together with a corresponding advise. By close tie-up with a medial institute and an insurance institute, the center can early find diseases of subscribers, and by calculating premiums imposed to subscribers with reference to results of initial diagnosis, premiums can be reduced.

Abstract: The present invention provides a method for plasma control, in which an electric field is generated in the direction perpendicular to the surface of an object to be processed in plasma atmosphere generated in a processing chamber and another electric field is generated in the direction parallel to the surface, and the direction of ion or electron in plasma atmosphere is controlled by controlling the composite electric field composed of both the electric fields. The invention provides also an apparatus for plasma control provided with a perpendicular electric field generating means for generating an electric field in the direction perpendicular to the surface of the object, and a parallel electric field generating means for generating an electric field in the direction parallel to the surface of the object.

Abstract: There is provided a clean room for manufacturing of semiconductor device which has further enhanced the transferring capability responding to the request for short Turn Around Time. In this clean room for manufacturing of semiconductor device, a manufacturing facility comprising various manufacturing apparatuses and measuring apparatuses for manufacturing semiconductor device is arranged in the manufacturing space on the floor, the clean air is blown from the ceiling side of the manufacturing space, the air is then returned to the area under the floor via the ventilating aperture formed at the floor for circulating the air. The transfer route of the transferring system for transferring precursors of semiconductor device between each manufacturing facility is provided in the air returning area under the floor provided to return the air in the manufacturing space. Feeding of the precursors between the transferring system and manufacturing space can be executed through the aperture formed on the floor.

Abstract: A plasma treatment method and system allowing the plasma intensity to be controllably distributed perpendicularly to the inner wall and ensuring effective and uniform treatment in the case of executing plasma cleaning, plasma CVD, RIE or the like. In the plasma treatment where plasma is generated within a chamber 1 for plasma treatment, magnetic field 31 is applied perpendicularly to the inner wall of the chamber to produce plasma whose intensity is directed perpendicularly to the inner wall of the chamber or in parallel with the surface to be treated. Further, the magnetic filed 31 rendered into a revolving field 32 may be applied to rotate the plasma to accomplish a uniform and effective treatment.

Abstract: Hitherto, in the tension control for a reel, it is impossible to exceed the tension controlling range of about 1:10 which is determined by the tension controlling range of a single DC motor, so that for the reel which requires a tension controlling range over 1:10, a plurality of DC motors have been combined and used or a gear ratio between the reel and the DC motor has been changed for many years so far.In this invention an attention is paid to the fact such that the unpreferable phenomena such as a change in characteristic due to an armature reaction, and deterioration of rectification or the like which are caused by setting the field system to a low level can be fairly suppressed by limiting the setting and controlling range to a low region of an armature current.

Abstract: Hitherto, in the tension control for a reel, it has been impossible to exceed the tension controlling range of about 1:10 which is determined by the tension controlling range of a single DC motor, so that for the reel which requires a tension controlling range over 1:10, a plurality of DC motors have been combined and used or the gear ratio between the reel and the DC motor has been changed to date.In this invention, attention is paid to the fact that undesirable phenomena such as a change in characteristic due to an armature reaction, and deterioration of rectification which are caused by setting the field system to a low level can be sufficiently suppressed by limiting the setting and controlling range to the low region of an armature current.