Abstract: A semiconductor structure for inspection includes a semiconductor plate having a first main surface on one side and a second main surface on the other side, an inspection region provided in the first main surface, a main surface electrode having a first hardness and covering the first main surface in the inspection region, and a protective electrode having a second hardness which exceeds the first hardness, covering the main surface electrode in the inspection region, and forming a current path between the second main surface and the protective electrode via the semiconductor plate.

Abstract: A pattern can be precisely formed by irradiating, with an active energy beam, a positive sensitive resin composition according to this invention comprising a base polymer, an ether-bond-containing olefinic unsaturated compound and an acid-generating agent, where the base polymer is a copolymer comprising the structural units represented by formulas (1) to (3): where R1 and R3 are each independently hydrogen or methyl and R2 is C1-C6 straight or branched unsubstituted alkyl or C1-C6 straight or branched substituted alkyl, wherein a, b and c are 0.05 to 0.7, 0.15 to 0.8 and 0.01 to 0.5, respectively and a+b+c=1.

Abstract: A pattern can be precisely formed by irradiating, with an active energy beam, a positive sensitive resin composition according to this invention comprising a base polymer, an ether-bond-containing olefinic unsaturated compound and an acid-generating agent, where the base polymer is a copolymer comprising the structural units represented by formulas (1) to (3): 1

Abstract: A pattern can be precisely formed by irradiating, with an active energy beam, a positive sensitive resin composition according to this invention comprising a base polymer, an ether-bond-containing olefinic unsaturated compound and an acid-generating agent, where the base polymer is a copolymer comprising the structural units represented by formulas (1) to (3): where R1 and R3 are each independently hydrogen or methyl and R2 is C1-C6 straight or branched unsubstituted alkyl or C1-C6 straight or branched substituted alkyl, wherein a, b and c are 0.05 to 0.7, 0.15 to 0.8 and 0.01 to 0.5, respectively and a+b+c=1.

Abstract: This invention discloses a copolymer comprising structural units represented by formulas (1) to (3): where R1 and R3 are each hydrogen or methyl and R2 is C1-C6 straight or branched unsubstituted alkyl or C1-C6 straight or branched substituted alkyl; wherein a, b and c are 0.05 to 0.7, 0.15 to 0.8 and 0.01 to 0.5, respectively and a+b+c=1.

Abstract: The present invention discloses a hydrogenated ring-opening metathesis polymer comprising at least unit (A) of formula (1), unit (B) of formula (2) and unit (c) of formula (3): wherein a constituent molar ratio of the structural unit (A)/(B) is from 1/99 to 99/1 and a constituent molar ratio of the structural unit (B)/(C) is from 30/70 to 100/0 and, furthermore, a ratio of a weight-average molecular weight Mw to a number-average molecular weight Mn, that is Mw/Mn is from 1.0 to 2.0.

Abstract: A pattern can be precisely formed by irradiating, with an active energy beam, a positive sensitive resin composition according to this invention comprising a base polymer, an ether-bond-containing olefinic unsaturated compound and an acid-generating agent, where the base polymer is a copolymer comprising the structural units represented by formulas (1) to (3): 1

Abstract: There are herein disclosed a poly{1-(1-alkoxyalkoxy)-4-(1-methylethenyl)benzene} having a narrow molecular weight distribution, for example, a poly{1-(1-alkoxyethoxy)-4-(1-methylethenyl)benzene} or a poly{1-(2-tetrahydrofuranyloxy)-4-(1-methylethenyl)benzene} which is useful as a chemical amplification type positive resist material; a preparation process of the polymer which comprises reacting industrially easily available 4-(1-methylethenyl)phenol with a vinyl ether to produce an alkoxyalkoxy compound, and then carrying out an anionic polymerization; and a preparation process of poly{4-(1-methylethenyl)phenol} having a narrow molecular weight distribution useful as a tease polymer for a chemical amplification type positive resist material which comprises reacting the above-mentioned polymer with a protonic acid in the presence of an organic solvent.