Abstract: A device for producing single-crystal ingot, provided with coolers (19) using a piping system through which cooling water failure caused by water leakage and at the same time to find out conditions for maximizing a production efficiency, the coolers (19) are disposed at portions of the inner sides of thermal shielding elements (18) and the lower ends (19a) of cooling pipes are so set as to be positioned up to 150 mm high from the surface (12a) of molten silicon liquid.

Abstract: A method for producing a silicon ingot having no defect over a wide range of region with stability and good reproducibility, wherein when a silicon single crystal (11) is pulled up form a silicon melt (13), the shape of a solid-liquid interface (14) which a boundary between the silicon melt (13) and the silicon single crystal (11) and the temperature distribution on the side face (11b) of a single crystal under being pulled up are appropriately controlled.

Abstract: There are provided a CZ system for manufacturing a single-crystal ingot, which produces a perfect crystal with good reproducibility through growth of a single-crystal ingot, as well as a method of manufacturing the single-crystal ingot. A system of manufacturing a single-crystal ingot by pulling a single-crystal ingot from molten raw material by means of a Czochralski technique, the system including measurement means for measuring the distance between the level of molten raw material and the bottom of a heat-shielding member. On the basis of the thus-measured distance, the temperature gradient of area G1 of the single-crystal pulled silicon ingot is controlled so as to produce a perfect crystal with good reproducibility, by means of controlling any factor for pulling a single-crystal silicon ingot selected from the group comprising the amount of heat applied to silicon melt, the level of silicon melt, and the pull rate of a single-crystal silicon ingot.

Abstract: This invention provides a device for manufacturing single crystals provided with an after-cooler that causes an abrupt temperature gradient along the axis of the crystal being lifted. The device according to this invention can further increase the lifting speed of single crystals. The after-cooler (4) is disposed between the single crystal (5) being lifted and the heat-shield plate (1). Both the inner surface facing the single crystal (5) and the outer surface facing the heat-shield plate (1) of the after-cooler have a surface emissivity value larger than 0.6. Furthermore, the after-cooler (4) is made of cooling pipes or cooling jackets, and the surfaces of the after-cooler (4) are treated by oxidizing or nitriding so as to increase their emissivity values.

Abstract: An apparatus for fabricating single-crystal silicon easily controlling a temperature gradient based on the Czochralski (CZ) method, and more particularly preventing as-grown defects created in order to obtain high-quality single-crystal silicon.The above-mentioned apparatus includes a first thermal shield member surrounding the pulling single-crystal silicon and a second thermal shield member inside the first thermal shield member, surrounding the pulling single-crystal silicon. The second thermal shield member is fixed on the first thermal shield member by a support located on the external surface of the second thermal shield member and connected to the first thermal shield member. The surroundings of a solid-liquid interface are extremely cooled by using the first thermal shield member, thereby a stable shape of the single-crystal silicon is formed. The temperature gradient of the temperature region of 1000.degree. C..about.1200.degree. C.

Abstract: An cylindrical after-heater surrounding a single crystal being lifted and a cylindrical heat-retaining cylinder installed between the after-heater and the single crystal are provided above a reversed frustrated heat-shielding sleeve disposed near the melted liquid. The heat history of the single crystal can be controlled by adjusting the output of the after-heater and the location of the heat-retaining cylinder. By such an arrangement, rapid respond to the change of the heat environment in a furnace can be made and control of the temperature gradient of the single crystal can be achieved. The single crystal, throughout the whole length, is maintained in the range of from 1000.degree. C. to 1200.degree. C. for more than one hour during lifting operation.

Abstract: This invention provides a method and apparatus for fabricating semiconductor single crystals. By using the method of this invention, the temperature gradient of the single crystal being lifted can be easily controlled. The as-grown defect density can be reduced, and it is possible to manufacture high quality semiconductor single crystals with high oxidation-film breakdown strength. A shield cylinder is used for surrounding the semiconductor single crystal 7 being lifted, the shield cylinder is made to be of the telescopic type and consists of a first shield duct 4, a second shield duct 5, a third shield duct 6. A wire 8 wrapping around a wind-up reel 10 is engaged with the third shield duct 6, and the shield cylinder can be driven to extend or retract by rotating the wind-up reel 10. An ascend and descend rod 3 is connected with the first duct 4, and the shield cylinder can be driven to move upward or downward by lifting or lowering the ascend and descend rod 3.