Patents by Inventor Toshirou Watanabe

Toshirou Watanabe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230158121
    Abstract: A biological function regulating agent comprises a fermented collagen peptide, and the fermented collagen peptide has at least one action selected from the group consisting of an epidermal metabolism promoting action, a fat accumulation inhibiting action, a fat decomposition promoting action and an action of regulating the amount of adipocytokine in a biological body.
    Type: Application
    Filed: March 22, 2021
    Publication date: May 25, 2023
    Applicant: NITTA GELATIN INC.
    Inventors: Seiko KOIZUMI, Mona SATO, Ai HIMENO, Toshirou WATANABE
  • Publication number: 20230149281
    Abstract: A peptide composition comprises a collagen peptide, and at least three first compounds selected from the group consisting of isovaleric aldehyde, 1-octen-3-ol, phenylacetaldehyde and methional.
    Type: Application
    Filed: March 22, 2021
    Publication date: May 18, 2023
    Applicant: NITTA GELATIN INC.
    Inventors: Masaya SHINODA, Masayuki MIMASU, Mona SATO, Toshirou WATANABE
  • Patent number: 6566185
    Abstract: A semiconductor device has a plurality of transistor units each of which is constituted by a unit prepared by arranging a plurality of unit cells each made up of a drain, gate, and source adjacent to each other on the major surface of a semiconductor substrate, a gate extraction electrode which extends in a direction perpendicular to the longitudinal direction of the gate and is commonly connected to the gates of the unit cells, a drain extraction electrode which is positioned at a side where the drain extraction electrode faces the gate extraction electrode via the unit, extends in a direction perpendicular to the longitudinal direction of the drain, and is commonly connected to the drains of the unit cells, a gate pad connected to the gate extraction electrode, and a drain pad connected to the drain extraction electrodes. The gate pads of adjacent transistor units are connected to each other by a gate extraction electrode connection wiring line having a resistor of 0.6 to 10 &OHgr;.
    Type: Grant
    Filed: October 11, 2001
    Date of Patent: May 20, 2003
    Assignee: NEC Compound Semiconductor Devices, Ltd.
    Inventors: Toshiaki Inoue, Toshirou Watanabe
  • Publication number: 20020037618
    Abstract: A semiconductor device has a plurality of transistor units each of which is constituted by a unit prepared by arranging a plurality of unit cells each made up of a drain, gate, and source adjacent to each other on the major surface of a semiconductor substrate, a gate extraction electrode which extends in a direction perpendicular to the longitudinal direction of the gate and is commonly connected to the gates of the unit cells, a drain extraction electrode which is positioned at a side where the drain extraction electrode faces the gate extraction electrode via the unit, extends in a direction perpendicular to the longitudinal direction of the drain, and is commonly connected to the drains of the unit cells, a gate pad connected to the gate extraction electrode, and a drain pad connected to the drain extraction electrodes. The gate pads of adjacent transistor units are connected to each other by a gate extraction electrode connection wiring line having a resistor of 0.6 to 10&OHgr;.
    Type: Application
    Filed: October 11, 2001
    Publication date: March 28, 2002
    Applicant: NEC Corporation
    Inventors: Toshiaki Inoue, Toshirou Watanabe
  • Patent number: 6346728
    Abstract: A semiconductor device has a plurality of transistor units each of which is constituted by a unit prepared by arranging a plurality of unit cells each made up of a drain, gate, and source adjacent to each other on the major surface of a semiconductor substrate, a gate extraction electrode which extends in a direction perpendicular to the longitudinal direction of the gate and is commonly connected to the gates of the unit cells, a drain extraction electrode which is positioned at a side where the drain extraction electrode faces the gate extraction electrode via the unit, extends in a direction perpendicular to the longitudinal direction of the drain, and is commonly connected to the drains of the unit cells, a gate pad connected to the gate extraction electrode, and a drain pad connected to the drain extraction electrodes. The gate pads of adjacent transistor units are connected to each other by a gate extraction electrode connection wiring line having a resistor of 0.6 to 10 &OHgr;.
    Type: Grant
    Filed: February 12, 1999
    Date of Patent: February 12, 2002
    Assignee: NEC Corporation
    Inventors: Toshiaki Inoue, Toshirou Watanabe