Patents by Inventor Toshitaka Shimamoto

Toshitaka Shimamoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device
    Publication number: 20020081763
    Abstract: The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a second semiconductor layer made of a second group III nitride on the first semiconductor layer by supplying a second group III source and a group V source containing nitrogen. At least one of the steps (1) and (2) includes the step of supplying a p-type dopant over the substrate, and an area near the interface between the first semiconductor layer and the second semiconductor layer is grown so that the density of the p-type dopant locally increases.
    Type: Application
    Filed: December 19, 2001
    Publication date: June 27, 2002
    Inventors: Akihiko Ishibashi, Ayumu Tsujimura, Yoshiaki Hasegawa, Nobuyuki Otsuka, Gaku Sugahara, Ryoko Miyanaga, Toshitaka Shimamoto, Kenji Harafuji, Yuzaburo Ban, Kiyoshi Ohnaka