Patents by Inventor Toshitsura Cho

Toshitsura Cho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130174868
    Abstract: Provided are a purification method and purification apparatus for an alkaline treatment liquid for a semiconductor substrate, which use adsorption purification means that can purify various alkaline treatment liquids to be used for treating semiconductor substrates for various purposes so as to have an ultrahigh purity, in particular, an Fe concentration in a ppq region, and that is excellent in chemical resistance and mechanical strength. The adsorption purification means is purification means for an alkaline treatment liquid for treating a semiconductor substrate for various purposes at the time of producing, for example, a semiconductor substrate or a semiconductor device.
    Type: Application
    Filed: September 26, 2011
    Publication date: July 11, 2013
    Applicants: UMS CO., LTD., TAMA CHEMICALS CO., LTD.
    Inventors: Hisashi Muraoka, Toshitsura Cho
  • Patent number: 8206573
    Abstract: Provided is an electrode for electrolysis with excellent corrosion resistance and durability which can be used sustainably in the production of a high-purity quaternary ammonium hydroxide by the electrolysis of a quaternary ammonium inorganic acid salt in an electrolytic cell partitioned by a cation exchange membrane on a commercial scale with reduced electric power consumption at low cost. The electrode for electrolysis is useful for the production of a quaternary ammonium hydroxide by the electrolysis of a quaternary ammonium inorganic acid salt in an electrolytic cell partitioned by a cation exchange membrane and comprises an electrode base material of an electrically conductive metal, an electrode active layer containing an electrode active material covering the electrode base material, and an intermediate layer of a mixed oxide of an oxide of at least one kind of metal selected from In, Ir, Ta, Ti, Ru, and Nb and an oxide of Sn disposed between the electrode base material and the electrode active layer.
    Type: Grant
    Filed: September 8, 2005
    Date of Patent: June 26, 2012
    Assignee: Tama Chemicals Co., Ltd.
    Inventors: Yoshiro Ohta, Toshitsura Cho
  • Publication number: 20090317624
    Abstract: Disclosed is a uniformly-dispersed photocatalyst coating liquid having excellent dispersion stability of titanium oxide particles which have photocatalytic activity, which coating liquid places no burden on the environment while being excellent in handling properties. In addition, this uniformly-dispersed photocatalyst coating liquid enables to form a photocatalyst coating film, which is excellent in photocatalytic activities (antifouling property and/or antibacterial property), transparency and durability, on the surface of a base when applied thereto. Also disclosed are a method for producing such a uniformly-dispersed photocatalyst coating liquid, and a photocatalytically active composite material obtained by using such a uniformly-dispersed photocatalyst coating liquid.
    Type: Application
    Filed: February 19, 2007
    Publication date: December 24, 2009
    Inventors: Ken Yoshioka, Masutake Tamaoka, Toshitsura Cho, Ryuichi Ohyama, Tetsuya Okuda, Hisashi Fujii, Yoshihito Kamimoto, Yoshiyuki Fukazawa
  • Publication number: 20080035491
    Abstract: Provided is an electrode for electrolysis with excellent corrosion resistance and durability which can be used sustainably in the production of a high-purity quaternary ammonium hydroxide by the electrolysis of a quaternary ammonium inorganic acid salt in an electrolytic cell partitioned by a cation exchange membrane on a commercial scale with reduced electric power consumption at low cost. The electrode for electrolysis is useful for the production of a quaternary ammonium hydroxide by the electrolysis of a quaternary ammonium inorganic acid salt in an electrolytic cell partitioned by a cation exchange membrane and comprises an electrode base material of an electrically conductive metal, an electrode active layer containing an electrode active material covering the electrode base material, and an intermediate layer of a mixed oxide of an oxide of at least one kind of metal selected from In, Ir, Ta, Ti, Ru, and Nb and an oxide of Sn disposed between the electrode base material and the electrode active layer.
    Type: Application
    Filed: September 8, 2005
    Publication date: February 14, 2008
    Applicant: TAMA CHEMICALS CO., LTD.
    Inventors: Yoshiro Ohta, Toshitsura Cho
  • Publication number: 20070094936
    Abstract: To provide an abrasive slurry having high dispersion stability, including: abrasive fine particles made of one or more kinds of oxides; colloidal fine particles made of colloidal oxide with an average particle size smaller than an average particle size of the abrasive fine particles; and a dispersion medium in which the abrasive fine particles and the colloidal fine particles are dispersed, and a manufacturing method for a substrate as an inorganic substrate, including polishing the substrate using the abrasive slurry. An abrasive slurry according to the present invention keeps high dispersion stability for a long time and shows a satisfactory redispersion property, which can eliminate a problem about precipitation/aggregation as much as possible and can be used as a dispersant-free abrasive containing absolutely no organic dispersant.
    Type: Application
    Filed: October 31, 2006
    Publication date: May 3, 2007
    Applicant: TAMA CHEMICALS CO., LTD.
    Inventors: Toshitsura Cho, Akira Iwashiro, Toshiaki Aso
  • Patent number: 6861010
    Abstract: The copper-based metal polishing composition causes Cu or Cu alloy not to be dissolved at all in immersing Cu or Cu alloy therein, and makes it possible to polish Cu or Cu alloy at a high rate in polishing treatment. Such a copper-based metal polishing composition comprises a water-soluble first organic acid capable of reaction with copper to produce a copper complex compound which is substantially insoluble in water and has a mechanical strength lower than that of copper, at least one second organic acid selected from an organic acid having a single carboxyl group and a single hydroxyl group and oxalic acid, an abrasive grain, an oxidizing agent, and water.
    Type: Grant
    Filed: April 18, 2002
    Date of Patent: March 1, 2005
    Assignees: Kabushiki Kaisha Toshiba, Tama Chemicals Co., Ltd.
    Inventors: Hideaki Hirabayashi, Naoaki Sakurai, Toshitsura Cho, Shumpei Shimizu, Katsuhiro Kato, Akiko Saito
  • Publication number: 20040221516
    Abstract: To provide an abrasive slurry having high dispersion stability, including: abrasive fine particles made of one or more kinds of oxides; colloidal fine particles made of colloidal oxide with an average particle size smaller than an average particle size of the abrasive fine particles; and a dispersion medium in which the abrasive fine particles and the colloidal fine particles are dispersed, and a manufacturing method for a substrate as an inorganic substrate, including polishing the substrate using the abrasive slurry. An abrasive slurry according to the present invention keeps high dispersion stability for a long time and shows a satisfactory redispersion property, which can eliminate a problem about precipitation/aggregation as much as possible and can be used as a dispersant-free abrasive containing absolutely no organic dispersant.
    Type: Application
    Filed: February 18, 2004
    Publication date: November 11, 2004
    Inventors: Toshitsura Cho, Akira Iwashiro, Toshiaki Aso
  • Publication number: 20020160608
    Abstract: The copper-based metal polishing composition causes Cu or Cu alloy not to be dissolved at all in immersing Cu or Cu alloy therein, and makes it possible to polish Cu or Cu alloy at a high rate in polishing treatment. Such a copper-based metal polishing composition comprises a water-soluble first organic acid capable of reaction with copper to produce a copper complex compound which is substantially insoluble in water and has a mechanical strength lower than that of copper, at least one second organic acid selected from an organic acid having a single carboxyl group and a single hydroxyl group and oxalic acid, an abrasive grain, an oxidizing agent, and water.
    Type: Application
    Filed: April 18, 2002
    Publication date: October 31, 2002
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Hideaki Hirabayashi, Naoaki Sakurai, Toshitsura Cho, Shumpei Shimizu, Katsuhiro Kato, Akiko Saito
  • Patent number: 6426294
    Abstract: The copper-based metal polishing composition causes Cu or Cu alloy not to be dissolved at all in immersing Cu or Cu alloy therein, and makes it possible to polish Cu or Cu alloy at a high rate in polishing treatment. Such a copper-based metal polishing composition comprises a water-soluble first organic acid capable of reaction with copper to produce a copper complex compound which is substantially insoluble in water and has a mechanical strength lower than that of copper, at least one second organic acid selected from an organic acid having a single carboxyl group and a single hydroxyl group and oxalic acid, an abrasive grain, an oxidizing agent, and water.
    Type: Grant
    Filed: October 1, 1999
    Date of Patent: July 30, 2002
    Assignees: Kabushiki Kaisha Toshiba, Tama Chemicals Co., Ltd.
    Inventors: Hideaki Hirabayashi, Naoaki Sakurai, Toshitsura Cho, Shumpei Shimizu, Katsuhiro Kato, Akiko Saito
  • Patent number: 6315644
    Abstract: An apparatus of this invention for supplying an abrasive for use in the manufacture of semiconductors comprises a storage tank of the abrasive and a supply line for guiding the abrasive from the storage tank to a nozzle for supplying the abrasive to an object to be polished and said storage tank or supply line is provided with a device for furnishing ultrasonic wave to sonicate the abrasive. A process of this invention for supplying an abrasive for use in the manufacture of semiconductors comprises sonicating the abrasive by ultrasonic wave before supplying it to an object to be polished. The apparatus and process of this invention for supplying an abrasive for use in the manufacture of semiconductors make it possible to supply an abrasive containing a minimized amount of abnormally agglomerated particles to the surface of an object to be polished in the manufacturing step of semiconductors and improve the yield of polished products.
    Type: Grant
    Filed: November 22, 1999
    Date of Patent: November 13, 2001
    Assignee: Tama Chemicals Co., Ltd.
    Inventors: Toshitsura Cho, Akira Iwashiro
  • Patent number: 5783609
    Abstract: A process which comprises reacting a high molecular weight polyorganosiloxane or a composition containing the same with an alkoxysilane and/or a partially hydrolyzed condensate thereof at a temperature of lower than 300.degree. C. in the presence of an alcoholate compound and recovering the resulting organoalkoxysilane and, in addition thereto, at least one of a distillable polyorganosiloxane low molecular weight compound, a non-volatile liquid polyorganosiloxane and a silica; and a process which comprises reacting a high molecular weight polyorganosiloxane or a composition containing the same with an alcoholate compound at a temperature of 50.degree. to 150.degree. C. in an anhydrous state and recovering the resulting distillable polyorganosiloxane low molecular weight compound and, in addition thereto, at least one of an organoalkoxysilane and a non-volatile liquid polyorganosiloxane.
    Type: Grant
    Filed: June 27, 1996
    Date of Patent: July 21, 1998
    Assignees: Tama Chemicals Co., Ltd., Toshiba Silicone Co., Ltd.
    Inventors: Tsurahide Cho, Yoshiro Ohta, Toshitsura Cho, Tohru Yamashita, Nobuaki Ohkawa, Makoto Nishida
  • Patent number: 5545309
    Abstract: The invention is a method of processing a waste liquid containing at least an organic quaternary ammonium hydroxide. The waste liquid is brought into contact with a cation-exchanging material so as to make the organic quaternary ammonium ions adsorbed by the material to thereby remove the ions from the liquid (adsorbing step), and optionally the cation-exchanged water obtained by the contact is again processed to separate and remove resist peelings and surfactants therefrom. The invention is also a method of processing the organic quaternary ammonium hydroxide-containing waste liquid for recovering a valuable substance of the organic quaternary ammonium hydroxide therefrom.
    Type: Grant
    Filed: May 11, 1995
    Date of Patent: August 13, 1996
    Assignee: Tama Chemicals Co., LTD.
    Inventors: Shumpei Shimizu, Toshitsura Cho, Shigeo Iiri
  • Patent number: 5534649
    Abstract: This invention relates to a process for preparing dialkyl carbonates by the reaction of one kind or a mixture of two or more kinds selected from urea, methyl carbamate and ethyl carbamate with methanol and/or ethanol in the presence of a catalyst under pressure at 100.degree. to 250.degree. C. and the process does not use poisonous phosgene or carbon monoxide as raw material and readily yields dimethyl carbonate and diethyl carbonate in simple equipment.
    Type: Grant
    Filed: December 29, 1994
    Date of Patent: July 9, 1996
    Assignees: Tama Chemicals Co., Ltd., Moses Lake Industries, Inc.
    Inventors: Tsurahide Cho, Takaaki Tamura, Toshitsura Cho, Kazumi Suzuki
  • Patent number: 5439564
    Abstract: The invention is a method of processing a waste liquid containing at least an organic quaternary ammonium hydroxide. The waste liquid is brought into contact with a cation-exchanging material so as to make the organic quaternary ammonium ions adsorbed by the material to thereby remove the ions from the liquid (adsorbing step), and optionally the cation-exchanged water obtained by the contact is again processed to separate and remove resist peelings and surfactants therefrom. The invention is also a method of processing the organic quaternary ammonium hydroxide-containing waste liquid for recovering a valuable substance of the organic quaternary ammonium hydroxide therefrom.
    Type: Grant
    Filed: November 10, 1993
    Date of Patent: August 8, 1995
    Assignee: Tama Chemicals Co. Ltd.
    Inventors: Shumpei Shimizu, Toshitsura Cho, Shigeo Iiri
  • Patent number: 4892625
    Abstract: A distillable liquid containing non-volatile impurities is freed of those impurities by boiling the liquid to form vapors of the liquid, passing the vapors through a packed column heated to a temperature such that liquid entrained in the vapors is completely vaporized and the non-volatile impurities remain in the packed column, and condensing the vapors from the column.
    Type: Grant
    Filed: June 23, 1987
    Date of Patent: January 9, 1990
    Assignees: Tama Chemicals Co., Ltd., Moses Lake Industries, Inc.
    Inventors: Shumpei Shimizu, Mamoru Yoshizako, Toshitsura Cho
  • Patent number: 4806329
    Abstract: A method of producing synthetic silica which is characterized by hydrolyzing a tetraalkoxysilane under a basic condition in the presence of an ammonium salt.
    Type: Grant
    Filed: September 4, 1986
    Date of Patent: February 21, 1989
    Assignee: Tama Chemicals Co., Ltd.
    Inventors: Toshitsura Cho, Mamoru Yoshizako
  • Patent number: 4634509
    Abstract: An aqueous quaternary ammonium hydroxide solution is produced by a method which is characterized by the steps of synthesizing an inorganic acid salt of quaternary ammonium by the reaction of a trialkylamine with a dialkyl carbonate and the electrolyzing the inorganic acid salt with an electrolytic cell using a cation-exchange membrane as a diaphragm thereby producing quaternary ammonium hydroxide.
    Type: Grant
    Filed: January 24, 1986
    Date of Patent: January 6, 1987
    Assignee: Tama Chemical Co., Ltd.
    Inventors: Shumpei Shimizu, Toshitsura Cho, Osamu Yagi