Patents by Inventor Toshiya Bonar YOKOGAWA

Toshiya Bonar YOKOGAWA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • NITRIDE SEMICONDUCTOR STRUCTURE, MULTILAYER STRUCTURE, AND NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT
    Publication number: 20140269801
    Abstract: A nitride semiconductor structure includes: a plurality of crystal growth seed regions formed of a nitride semiconductor, of which the principal surface is an m-plane and which extends to a range that defines an angle of not less than 0 degrees and not more than 10 degrees with respect to an a-axis; and a laterally grown region formed of a nitride semiconductor which has extended in a c-axis direction from each of the plurality of crystal growth seed regions. An S width that is the spacing between adjacent ones of the plurality of crystal growth seed regions is at least 20 ?m.
    Type: Application
    Filed: June 2, 2014
    Publication date: September 18, 2014
    Applicant: Panasonic Corporation
    Inventors: Songbaek CHOE, Shunji YOSHIDA, Toshiya Bonar YOKOGAWA