Abstract: The purpose of the present disclosure is to improve the dynamic range of an image sensor including a polarization pixel. The image sensor includes: a high-sensitivity pixel group; and a low-sensitivity pixel group. The high-sensitivity pixel group included in the image sensor includes a plurality of high-sensitivity pixels. The low-sensitivity pixel group included in the image sensor includes a plurality of low-sensitivity pixels. A polarization unit that causes incident light in a predetermined polarization direction to be transmitted therethrough is disposed in part of pixels of at least the high-sensitivity pixel group, of the high-sensitivity pixel group and the low-sensitivity pixel group.

Abstract: A method of heat-treating a semiconductor wafer comprises: heat-treating a semiconductor wafer in an atmosphere of an inert gas which does not absorb infrared rays in a specific infrared region to determine heat-treating conditions that heat the semiconductor wafer in a desired temperature profile; and heat-treating a semiconductor wafer in an atmosphere of a process gas according to the previously determined heat-treating conditions. Since the inert gas used in predetermining the heat-treating conditions does not absorb infrared radiation in the specific infrared region corresponding to the infrared absorption range of the process gas, the temperature of the semiconductor wafer can be accurately measured by a pyrometer to determine the heat-treating conditions. In the practical heat treatment of a semiconductor wafer, the temperature of a semiconductor wafer can be accurately controlled according to the predetermined heat-treating conditions.