Abstract: A charging system includes a charging station having: a base underwater; a pole extending in an upper-lower direction; and a power supplying portion. An AUV includes: an underwater main body; a power receiving portion; a holding device including a pair of guide and holding portions, the pair of guide portions guides the pole to a holding position after the pole contacts the guide portions from a proceeding-direction, the holding portion holds the pole to be rotatable relative to the pole; a thrust generating apparatus generates in a horizontal direction; and a control device controls the thrust generating apparatus. A light emitter at one of the base and the underwater main body, and a light receiver is provided at the other. The control device controls the thrust so the underwater main body reaches a rotational position where the light receiver receives light emitted, the rotational position set relative to the pole.

Abstract: A charging system includes a charging station having: a base underwater; a pole extending in an upper-lower direction; and a power supplying portion. An AUV includes: an underwater main body; a power receiving portion; a holding device including a pair of guide and holding portions, the pair of guide portions guides the pole to a holding position after the pole contacts the guide portions from a proceeding-direction, the holding portion holds the pole to be rotatable relative to the pole; a thrust generating apparatus generates in a horizontal direction; and a control device controls the thrust generating apparatus. A light emitter at one of the base and the underwater main body, and a light receiver is provided at the other. The control device controls the thrust so the underwater main body reaches a rotational position where the light receiver receives light emitted, the rotational position set relative to the pole.

Abstract: A rotating pumping apparatus is provided which may be employed in an automotive brake system. The rotating pumping apparatus includes a sealing member and a pressure member. The sealing member is disposed around a pump drive shaft. The pressure member includes a plate spring, a first rotation stopper, and a second rotation stopper. The first rotation stopper serves to stop the pressure member from rotating following rotation of the pump drive shaft. The second rotation stopper engages the seal ring to stop the sealing member from rotating following the rotation of the pump drive shaft. The plate spring works to elastically press the sealing member against a stopper wall of a pump casing to stop the sealing member from moving in an axial direction of the pump drive shaft.

Abstract: A rotating pumping apparatus is provided which may be employed in an automotive brake system. The rotating pumping apparatus includes a sealing member and a pressure member. The sealing member is disposed around a pump drive shaft. The pressure member includes a plate spring, a first rotation stopper, and a second rotation stopper. The first rotation stopper serves to stop the pressure member from rotating following rotation of the pump drive shaft. The second rotation stopper engages the seal ring to stop the sealing member from rotating following the rotation of the pump drive shaft. The plate spring works to elastically press the sealing member against a stopper wall of a pump casing to stop the sealing member from moving in an axial direction of the pump drive shaft.

Abstract: An underlying interconnect including a first barrier metal layer, an interconnect metal layer and a second barrier metal layer is formed on a semiconductor substrate, and an interlayer dielectric is formed thereon. Etching is performed with a photoresist defining an opening for a first via, and an opening for a second via having a larger bottom area than the first via opening, so as to form a first via hole and a second via hole in the interlayer dielectric. Since the second via hole has a larger diameter than the second via hole, the second via hole is opened up prior to the second via hole, and the underlying interconnect is exposed first at the bottom of the second via hole.

Abstract: An underlying interconnect including a first barrier metal layer, an interconnect metal layer and a second barrier metal layer is formed on a semiconductor substrate, and an interlayer dielectric is formed thereon. Etching is performed with a photoresist defining an opening for a first via, and an opening for a second via having a larger bottom area than the first via opening, so as to form a first via hole and a second via hole in the interlayer dielectric. Since the second via hole has a larger diameter than the second via hole, the second via hole is opened up prior to the second via hole, and the underlying interconnect is exposed first at the bottom of the second via hole.

Abstract: The curvature of a circular arc constituted by a side of a suction groove is made larger than that of a circular arc constituted by a side of a discharge groove. Thus, when the suction groove and the discharge groove are viewed in the axial direction of a drive shaft, the distance between the suction groove and the discharge groove in the radial direction of a rotary portion is short in a region intersecting with a line W perpendicular to a centerline, and increases in accordance with a decrease in distance from containment portions. It is therefore possible to ensure a sufficient distance between the discharge and suction grooves and enhance a total fluid pressure generated therebetween, and the contact surface pressure that is necessitated by a second side plate to obtain a press-back force when being in contact with an outer rotor and an inner rotor is reduced.

Abstract: The curvature of a circular arc constituted by a side of a suction groove is made larger than that of a circular arc constituted by a side of a discharge groove. Thus, when the suction groove and the discharge groove are viewed in the axial direction of a drive shaft, the distance between the suction groove and the discharge groove in the radial direction of a rotary portion is short in a region intersecting with a line W perpendicular to a centerline, and increases in accordance with a decrease in distance from containment portions. It is therefore possible to ensure a sufficient distance between the discharge and suction grooves and enhance a total fluid pressure generated therebetween, and the contact surface pressure that is necessitated by a second side plate to obtain a press-back force when being in contact with an outer rotor and an inner rotor is reduced.

Abstract: An underlying interconnect including a first barrier metal layer, an interconnect metal layer and a second barrier metal layer is formed on a semiconductor substrate, and an interlayer dielectric is formed thereon. Etching is performed with a photoresist defining an opening for a first via, and an opening for a second via having a larger bottom area than the first via opening, so as to form a first via hole and a second via hole in the interlayer dielectric. Since the second via hole has a larger diameter than the second via hole, the second via hole is opened up prior to the second via hole, and the underlying interconnect is exposed first at the bottom of the second via hole.

Abstract: A highly accurate, long-life grindstone for shaping a gear and a method of fabricating the grindstone, without depending on the accuracy of form of a base metal and without using a special grinding machine or a special lapping machine, are disclosed. A super-abrasive layer (29) of a predetermined thickness is fixedly attached on the outer periphery of a body portion (24) of the base metal (23) formed in a cylinder solid. The super-abrasive layer (29) is metal-bonded, and has the outer periphery thereof formed with a toothed portion (31) in the shape of the teeth of an external gear by electric discharge machining.

Abstract: A highly accurate, long-life grindstone for shaping a gear and a method of fabricating the grindstone, without depending on the accuracy of form of a base metal and without using a special grinding machine or a special lapping machine, are disclosed. A super-abrasive layer (29) of a predetermined thickness is fixedly attached on the outer periphery of a body portion (24) of the base metal (23) formed in a cylinder solid. The super-abrasive layer (29) is metal-bonded, and has the outer periphery thereof formed with a toothed portion (31) in the shape of the teeth of an external gear by electric discharge machining.

Abstract: A gear grinding machine and a gear grinding method, in which a gear-shaped grinding stone is caused to engage a gear-like workpiece and one of the gear-shaped grinding stone and the gear-like workpiece is reciprocated relatively to the other in axial direction thereby to grind the tooth flanks of the workpiece, are disclosed. The rotational resistance is applied by a brake unit to the rotationally driven side. The grinding resistance and the rotational resistance interfering with the relative reciprocal motion are detected by torque sensors and input to a control unit, the average value of each of the signals is compared with a reference value by an arithmetic unit and, in the case where there is a difference between the average value and the reference value, the rotational resistance is changed by activating the brake unit. Thus, a high machining accuracy can be maintained even when the sharpness of the grinding stone is reduced.

Abstract: Upon fabrication of semiconductor devices, a semiconductor substrate is subjected to ion implantation with high energy. Subsequent annealing of the ion-implanted semiconductor substrate, when conducted by heating the substrate to a temperature of from 1,000° C. to 1,200° C. at a ramp-up rate of at least 200° C./sec, makes it possible to provide the resulting semiconductor devices with smaller leakage currents of reduced variations (&sgr;/X). The present invention can therefore provide a process for the fabrication of semiconductor devices featuring both smaller leakage currents and reduced variations of the leakage currents even when ion implantation is conducted with high energy.

Abstract: A gear grinding machine and a gear grinding method, in which a gear-shaped grinding stone is caused to engage a gear-like workpiece and one of the gear-shaped grinding stone and the gear-like workpiece is reciprocated relatively to the other in axial direction thereby to grind the tooth flanks of the workpiece, are disclosed. The rotational resistance is applied by a brake unit to the rotationally driven side. The grinding resistance and the rotational resistance interfering with the relative reciprocal motion are detected by torque sensors and input to a control unit, the average value of each of the signals is compared with a reference value by an arithmetic unit and, in the case where there is a difference between the average value and the reference value, the rotational resistance is changed by activating the brake unit. Thus, a high machining accuracy can be maintained even when the sharpness of the grinding stone is reduced.

Abstract: Upon fabrication of semiconductor devices, a semiconductor substrate is subjected to ion implantation with high energy. Subsequent annealing of the ion-implanted semiconductor substrate, when conducted by heating the substrate to a temperature of from 1,000° C. to 1,200° C. at a ramp-up rate of at least 200° C./sec, makes it possible to provide the resulting semiconductor devices with smaller leakage currents of reduced variations (&sgr;/X). The present invention can therefore provide a process for the fabrication of semiconductor devices featuring both smaller leakage currents and reduced variations of the leakage currents even when ion implantation is conducted with high energy.

Abstract: A base (10) has a substantially cylindrical plug (12) penetrated by two leads 14. A piezoelectric oscillator (24) is secured to and supported on ends of the two leads by supports (26). The supports (26) are formed from solder having as high lead content of more than 60% by weight, preferably 85 to 98% by weight. A cap (28) open at one end is fitted on the piezoelectric oscillator (24). The plug (12) seals the open end of the cap (28) and forms a gas-tight casing, thus forming a piezoelectric oscillator unit with piezoelectric oscillator (24) held gas-tight in the inside. The high lead content solder is soft and has a low Young's Modulus, so that it can disperse stress when the piezoelectric oscillator experiences. It is thus possible to evade stress concentration on the piezoelectric oscillator (24) and improve shock resistance. A layer of a solder with a lead content of 60% by weight or less or of tin or a tin alloy, is formed on the surface of the leads (14), and ensures solder wetting property.