Abstract: An IGZO sintered compact composed of indium (In), gallium (Ga), zinc (Zn), oxygen (O) and unavoidable impurities, wherein the IGZO sintered compact has a flexural strength of 50 MPa or more, and a bulk resistance of 100 m?cm or less. Provided is a sputtering target capable of suppressing the target cracks and reducing the generation of particles during deposition via DC sputtering, and forming favorable thin films.

Abstract: An IGZO sintered compact composed of indium (In), gallium (Ga), zinc (Zn), oxygen (O) and unavoidable impurities, wherein the IGZO sintered compact has a transverse intensity of 50 MPa or more, and a bulk resistance of 100 m?cm or less. Provided is a sputtering target capable of suppressing the target cracks and reducing the generation of particles during deposition via DC sputtering, and forming favorable thin films.

Abstract: Provided is a sputtering target assembly comprising two or more sputtering target-backing plate bonded bodies B aligned in the width direction, wherein the sputtering target-backing plate bonded bodies B each include a cylindrical target having a diameter of 100 mm or more and a length of 1000 mm or more and composed of three or more target pieces A being divided such that the dividing lines lie in the circumferential direction and being bonded or placed onto a cylindrical or columnar backing plate, wherein the bonded bodies B are arranged to form the sputtering target assembly in such a manner that the dividing lines between the three target pieces of one bonded body B are not present at the same positions of the dividing lines between fractional target pieces of adjacent another bonded body B. It is an object of the present invention to provide a sputtering target assembly that can reduce defects due to occurrence of particles originated from the piece-bonding area.

Abstract: Provided is a sputtering target assembly comprising two or more sputtering target-backing plate bonded bodies B aligned in the width direction, wherein the sputtering target-backing plate bonded bodies B each include a cylindrical target having a diameter of 100 mm or more and a length of 1000 mm or more and composed of three or more target pieces A being divided such that the dividing lines lie in the circumferential direction and being bonded or placed onto a cylindrical or columnar backing plate, wherein the bonded bodies B are arranged to form the sputtering target assembly in such a manner that the dividing lines between the three target pieces of one bonded body B are not present at the same positions of the dividing lines between fractional target pieces of adjacent another bonded body B. It is an object of the present invention to provide a sputtering target assembly that can reduce defects due to occurrence of particles originated from the piece-bonding area.

Abstract: The present invention provides a multi-layered structure, where contamination of impurities into indium target is excellently prevented, and manufacturing method thereof. The multi-layered structure comprises: a backing plate, an impurity diffusion prevention layer, comprising thin film consisting of one or more metals selected from Fe, W, Ta, Te, Nb, Mo, S and Si, formed on the backing plate, and an indium target, formed on the impurity diffusion prevention layer.

Abstract: Provided are an ITO sputtering target wherein the number of particles having a grain diameter of 100 nm or greater exposed in the ITO sputtering target as a result of royal water etching or sputter etching is 1 particle/?m2, and an ITO sputtering target having a density of 7.12 g/cm3 or greater capable of improving the sputtering performance, in particular inhibiting the generation of arcing, suppressing the generation of defects in the ITO film caused by such arcing, and thereby effectively inhibiting the deterioration of the ITO film.

Abstract: Provided are an ITO sputtering target wherein the number of particles having a grain diameter of 100 nm or greater exposed in the ITO sputtering target as a result of royal water etching or sputter etching is 1 particle/?m2, and an ITO sputtering target having a density of 7.12 g/cm3 or greater capable of improving the sputtering performance, in particular inhibiting the generation of arcing, suppressing the generation of defects in the ITO film caused by such arcing, and thereby effectively inhibiting the deterioration of the ITO film.

Abstract: A grass trimmer having a cutting blade mounting head portion in which an output is disposed, and a cutting blade mounting member is provided for mounting a cutting blade. The output shaft has a relative rotation preventing engagement portion formed on a lower portion thereof, and a fitting centering portion formed on a portion of the output shaft which is immediately above and adjacent to the relative rotation preventing engagement portion. The cutting blade mounting member has a central hole extending therethrough, and the inner periphery of the central hole has a fitting portion and a coaxial engagement portion, both formed thereon, the fitting portion being capable of fitting on the relative rotation preventing engagement portion of the output shaft, and the coaxial engagement portion being engageable with the fitting centering portion of the output shaft.